Al/Nigrosin/p-Si Yapıların Fabrikasyonu ve Temel Diyot Parametrelerinin Hesaplanması

Ömer Güllü

Al/Nigrosin/p-Si Yapıların Fabrikasyonu ve Temel Diyot Parametrelerinin Hesaplanması

Öz

Bu çalışmada π bağları açısından zengin organik molekülün (Nigrosin (NIG)) optik özellikleri UV-Vis yöntemiyle belirlendi. Cam altlık üzerinde damlatma yöntemi ile büyütülen NIG ince tabakasının direkt yasak enerji değerleri; 1,42 eV (Q bandı) ve 2,94 eV (B bandı) olarak rapor edildi. Oluşturulan referans Al/p-Si ve Al/NIG/p-Si Metal/Organik aratabaka/Yarıiletken (MIS) yapılarının I-V ölçümleri sonunda tüm yapıların doğrultucu özelliğe sahip oldukları gözlemlendi. Oda sıcaklığında alınan I-V ölçümleri kullanılarak yapıların karakteristik diyot özellikleri belirlendi. Burada Al/NIG/p-Si diyotunun kapasitör özelliği, C-V ölçümleri alınarak incelendi ve yapılan hesaplamalar sonucunda bazı diyot parametreleri elde edildi. Elde edilen sonuçlar, π bağları açısından zengin olan NIG gibi organik malzemelerin elektronik sahasında kullanılabileceğini gösterdi.

Anahtar Kelimeler

Nigrosin,MIS diyot,I-V,C-V

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Details

Primary Language

Turkish

Subjects

-

Journal Section

Research Article

Authors

Ömer Güllü ^* This is me
0000-0002-3785-6190

Publication Date

September 25, 2018

Submission Date

December 13, 2017

Acceptance Date

February 15, 2018

Published in Issue

Year 2018 Volume: 9 Number: 2

IZ

https://izlik.org/JA53MY52ST

Cite

RIS / Bibtex

IEEE

[1]Ö. Güllü, “Al/Nigrosin/p-Si Yapıların Fabrikasyonu ve Temel Diyot Parametrelerinin Hesaplanması”, DUJE, vol. 9, no. 2, pp. 689–700, Sept. 2018, [Online]. Available: https://izlik.org/JA53MY52ST