Time Domain Dynamic Analysis of 1550nm Monolithic Two Sections Mode Locked MQW Laser

Abstract

In this study, time domain dynamic model of a mode locked two sections DBR laser was obtained. Sort duration and high power optical pulse generation from a semiconductor laser was examined by using obtained model. For this aim, while one of the laser sections was thought as reverse biased and so acted as a saturable absorber, other section thought as forward biased with a DC current and so acted as a gain section. A semiconductor laser biased this way can produce mode locked pulses by suitable adjusting of reverse bias and forward bias values and this method known as passive mode locking. 

Keywords

• Semiconductor Lasers, Passive Mode

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