The effect of different annealing conditions in undoped and Ag doped ZnO thin films grown by SILAR method

Year 2015, Volume: 1 Issue: 2, 77 - 81, 06.10.2015

Harun Güney

Abstract

Undoped, %3 and %5 Silver (Ag) doped zinc oxide (ZnO) thin films have been grown on glass substrates by simple and economic successive ionic layer absorption and reaction method (SILAR). All grown films were annealed vacuum and air to investigate to effective annealing at 573 K for 30 minutes. Energy-Dispersive-X-Ray-Fluorescence (EDXRF) spectroscopy showed %3 and %5 dopants Ag. Absorbance measurements showed that the optical band-gaps of all thin films were wide and generally decrease with annealing. Optical transmittance spectra of ZnO and %3 and %5 doped ZnO thin films showed good transmissions. Thickness of the films was measured by the gravimetric weight difference method using sensitive microbalance. 

Keywords

Anneal effect, SILAR, Ag-doped ZnO, absorbance, optical transmittance

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