Time Domain Dynamic Analysis of 1550nm Monolithic Two Sections Mode Locked MQW Laser

Year 2015, Volume: 1 Issue: 2, 70 - 76, 29.10.2015

Çağlar Duman , Bülent Çakmak

Abstract

In this study, time domain dynamic model of a mode locked two sections DBR laser was obtained. Sort duration and high power optical pulse generation from a semiconductor laser was examined by using obtained model. For this aim, while one of the laser sections was thought as reverse biased and so acted as a saturable absorber, other section thought as forward biased with a DC current and so acted as a gain section. A semiconductor laser biased this way can produce mode locked pulses by suitable adjusting of reverse bias and forward bias values and this method known as passive mode locking. 

Keywords

Semiconductor Lasers, Passive Mode

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