DOI: 10.26650/electrica.2018.56722
In this paper, a photonic integrated device fabricated on a silicon-on-insulator (SOI) platform is studied numerically to investigate its hydrogen sensing potential based on intensity variations. A single-slot hybrid structure consisting of a coaxial micro-ring resonator (MRR) and a palladium (Pd) disk is utilized for this purpose. The results of the numerical study reveal a hydrogen sensing ability of 2.83×10-4/(v/v-% hydrogen) and limit of detection (LOD) of 9.93×10-3 which is more than 10 times of that of the hydrogen sensors based on the traditional resonance shift. The proposed hydrogen sensing technique presents a compatible SOI-based technology and also provides a reliable detection of the slightest changes from the zero concentration in an analytical procedure.
DOI: 10.26650/electrica.2018.56722
In
this paper, a photonic integrated device fabricated on a silicon-on-insulator
(SOI) platform is studied numerically to investigate its hydrogen sensing
potential based on intensity variations. A single-slot hybrid structure
consisting of a coaxial micro-ring resonator (MRR) and a palladium (Pd) disk is
utilized for this purpose. The results of the numerical study reveal a hydrogen
sensing ability of 2.83×10-4/(v/v-% hydrogen) and limit of detection (LOD) of
9.93×10-3 which is more than 10 times of that of the hydrogen sensors based on
the traditional resonance shift. The proposed hydrogen sensing technique
presents a compatible SOI-based technology and also provides a reliable
detection of the slightest changes from the zero concentration in an analytical
procedure.
Primary Language | English |
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Subjects | Engineering |
Journal Section | Articles |
Authors | |
Publication Date | August 3, 2018 |
Published in Issue | Year 2018 Volume: 18 Issue: 2 |