A New FGMOS UCCII and SIMO Type Universal Filter Application

Year 2019, Volume: 19 Issue: 2, 128 - 134, 01.07.2019

Sinem Keleş , Fatih Keleş H. Hakan Kuntman

Abstract

DOI: 10.26650/electrica.2019.19006

A new floating gate MOS (FGMOS) universal current conveyor (UCCII) is proposed to have the properties of simplifier circuit topology, simpler signal processing and wider input swing. Since the FGMOS transistors are used in the proposed UCCII circuit, the number of transistors is reduced and the topology of the circuit is simplified because it is easier to get arithmetic operations in circuits by using FGMOS transistors when compared to conventional MOS transistors. At the same time, using FGMOS differential amplifier structure in the input stage of the FGMOS UCCII circuit increased the input signal swing resulting both an increase in the linearity of the circuit and an improvement in the voltage following properties. A single input multi output (SIMO) type universal filter application is given to show the versatility of the UCCII block. Both the proposed FGMOS UCCII circuit and filter circuit are simulated with SPICE program by using 0.35µm technology parameters. When the simulation results are analyzed it is seen that that the FGMOS UCCII circuit reached the expected improvements according to the MOS equivalent circuit and expected to be used in linearly tunable filters.

Cite this article as:  Keleş S, Keleş F, Kuntman HH. A New FGMOS UCCII and SIMO Type Universal Filter Application. Electrica 2019; 10.26650/electrica.2019.19006.

Keywords

FGMOS, UCCII, analog, wide range

References

• 1. G. Ferri, N. C. Guerrini, "Low-Voltage Low-Power CMOS Current Conveyors", Kluwer Academic Publishers, Boston, USA, 2003.
• 2. S. Keleş, F. Kaçar, H. Kuntman, F. Keleş, "A new FGMOS FDCCII and filter application", Informacije Midem, vol. 3, pp. 242-253, 2014.
• 3. T. Ettaghzouti, N. Hassen, K. Garradhi, K. Besbes, "Wide bandwidth CMOS four-quadrant mixed mode analogue multiplier using a second generation current conveyor circuit", Turk J Elec Eng & Comp Sci, vol. 26, no: 2, pp. 882-894, 2018. https://doi.org/10.3906/elk-1708-179
• 4. C. K. Choubey, D. S. Kastala, A. V. Panchal, "Design of current controlled DVCC based floating gate MOS and its application to universal filter", International Journal of Technology and Science, vol. 8, no: 1, pp. 26-29, 2016.
• 5. E. Rodriguez-Villegas, "Low Power and Low Voltage Circuit Design with the FGMOS Transistor", The Institution of Engineering and Technology, London, United Kingdom, 2006. https://doi.org/10.1049/PBCS020E
• 6. A. Naderi Saatlo, A. Amiri. "A Novel Realization of Low-Power and Low-Distortion Multiplier Circuit with Improved Dynamic Range", Advances in Electrical and Electronic Engineering, vol. 15, no. 5pp. 780-787, 2017. https://doi.org/10.15598/aeee.v15i5.2433
• 7. E. Sanchez-Sinencio, "Floating Gate Techniques and Applications: A Tutorial", Analog and Mixed-Signal Center TAMU, 2000.
• 8. S. Keleş, F. Keleş, H. Kuntman, "Square root circuit using FGMOS translinear principle", Analog Integrated Circuits and Signal Processing, vol. 98, no: 1, pp. 101-107, 2019. https://doi.org/10.1007/s10470-018-1158-9
• 9. E. Rodriguez-Villegas, H. Barnes, "Solution to trapped charge in FGMOS transistors", IEE Electronic Letters, vol. 39, no. 19, pp. 1416-1417, 2003. https://doi.org/10.1049/el:20030900
• 10. D. Becvar, K. Vrba, V. Zeman, V. Musil, "Novel universal active block: a universal current conveyor", International Symposium on Circuits and Systems, Geneva, Switzerland, 2000, pp. 306-313.
• 11. S. Keleş, H. Kuntman, "Four quadrant FGMOS analog multiplier", Turk J Elec Eng & Comp Sci, vol. 19, no. 2, pp. 291-301, 2011.
• 12. A. Navarro, A. Lopez-Martin, A. Carlosena, "Low-voltage rail-to-rail tunable FGMOS transconductor", Analog Integrated Circuits and Signal Processing, vol. 36, no. 3, pp. 251-254, 2003. https://doi.org/10.1023/A:1024756830793
• 13. J. Jerabek, K. Vrba, "SIMO type low-input and high-output impedance current-mode universal filter employing three universal current conveyors", Int J Electron Commun (AEÜ), vol. 64, no. 6, pp. 588-593, 2010. https://doi.org/10.1016/j.aeue.2009.03.002