Design and Numerical Investigation of Highly Photovoltaic Efficiency of Novel Non-Toxic Double Perovskite Solar Cell with Igzo as Electron Transport Layer

Abstract

The development of lead-free perovskite solar cells, is indeed a promising solution to the toxicity issue associated with traditional lead-based perovskites. These lead-free alternatives aim to maintain high efficiency while being environmentally friendly. In this context, we aim to propose a novel lead-free double perovskite solar cell with IGZO as electron transport layer (ETL). It has been demonstrated recently that this inorganic halide double perovskite with the structure A2BX6 is more stable compared to the lead-free perovskite with the structure ABX3. We design our solar cell with the planar architecture where the perovskite layer is sandwiched between an electron transport layer IGZO and a hole transport layer MoSe2. This contributes to efficient charge separation and collection, which is crucial for the performance of the solar cell. Our work focuses on the optimization and analysis of various key parameters governing perovskite solar cell performance, including the thicknesses of all layers, the acceptors NA and defects Nt charge carrier densities, parasitic series resistance RS and the working temperature T. The current-voltage characteristics (J-V), and quantum efficiency (QE) are analyzed via these key parameters. Our final optimal results, gives an impressive Power Conversion Efficiency (PCE) up to 25%. These findings represent a significant advancement and proposes the perovskite as a potential photoactive material in the renewable energy technology.

Keywords

• Lead-free halide double perovskite solar cell
• SCAPS simulation
• IGZO
• Acceptors density NA
• Defect density Nt
• Series resistance RS
• Working temperature T.

References

1. Merad, A.E., Mamoun, S., & Abbaci A.E. (2024). Design and numerical investigation of highly photovoltaic efficiency of novel non-toxic double perovskite solar cell with IGZO as electron transport layer. The Eurasia Proceedings of Science, Technology, Engineering & Mathematics (EPSTEM), 32, 439-448.