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A Study on the Wide Frequency Range Electrical Variables in the Al/Coumarin–PVA/p-Si Diodes at Room Temperature

Year 2023, , 53 - 61, 28.03.2023
https://doi.org/10.54287/gujsa.1202745

Abstract

Coumarin-PVA is deposited onto p-Si wafers using the spin coating technique. I examined the fundamental electrical variables of the Al/CoumarinPVA/p-Si type Schottky barrier diodes (SBDs), by utilizing capacitance/voltage(C-V) and conductance/voltage (G-V) measurements at different frequencies varied from 10kHz to1MHz. I have thoroughly explored how the CoumarinPVA interlayer, series resistance (Rs) and surface states (Nss) affect the electrical properties of SBDs. In order to remove Rs's influence on the observed C and G values, I corrected them. The observed high values of C/G measured at low frequencies result from the existence of interfacial states. There is evidence that while NA decreases exponentially with increasing frequency, B increases exponentially. A particular distribution of Nss density, polarization processes, and the existence of an interfacial layer can all contribute to explaining these characteristic features of them. According to experimental findings, I conclude that the interfacial polymer CoumarinPVA layer as well as the Nss and Rs also have a significant impact on the C/G-V quantities of SBDs.

Supporting Institution

Amasya University

Project Number

FMB-BAP 17-0292

References

  • Ashery, A., Gad, S. A., & Turky, G. M. (2021). Analysis of Electrical and Capacitance–Voltage of PVA/nSi. Journal of Electronic Materials, 50(6), 3498-3516. doi:10.1007/s11664-021-08867-y
  • Card, H. C., & Rhoderick, E. H. (1971). Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. Journal of Physics D: Applied Physics, 4(10), 1589-1601. doi:10.1088/0022-3727/4/10/319
  • Cetinkaya, H. G., Cicek, O., Altindal, S., Badali, Y., & Demirezen, S. (2022). Vertical CdTe:PVP/ p -Si-Based Temperature Sensor by Using Aluminum Anode Schottky Contact. IEEE Sensors Journal, 22(23), 22391-22397. doi:10.1109/JSEN.2022.3212867
  • Çokduygulular, E., Çetinkaya, Ç., Yalçın, Y., & Kınacı, B. (2020). A comprehensive study on Cu-doped ZnO (CZO) interlayered MOS structure. Journal of Materials Science: Materials in Electronics, 31(16), 13646-13656. doi:10.1007/s10854-020-03922-6
  • Demirezen, S., Çetinkaya, H. G., & Altındal, Ş. (2022). Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range. Silicon, 14(14), 8517-8527. doi:10.1007/s12633-021-01640-0
  • Demirezen, S., & Altındal Yerişkin, S. (2020). A detailed comparative study on electrical and photovoltaic characteristics of Al/p-Si photodiodes with coumarin-doped PVA interfacial layer: the effect of doping concentration. Polymer Bulletin, 77(1), 49-71. doi:10.1007/s00289-019-02704-3
  • Ghouili, A., Dusek, M., Petricek, V., Ayed, T. B., & Hassen, R. B. (2014). Synthesis, crystal structure and spectral characteristics of highly fluorescent chalcone-based coumarin in solution and in polymer matrix. Journal of Physics and Chemistry of Solids, 75(2), 188-193. doi:10.1016/j.jpcs.2013.09.011
  • Hill, W. A., & Coleman, C. C. (1980). A single-frequency approximation for interface-state density determination. Solid-State Electronics, 23(9), 987-993. doi:10.1016/0038-1101(80)90064-7
  • Liu, X., Cole, J. M., Waddell, P. G., Lin, T.-C., Radia, J., & Zeidler, A. (2012). Molecular Origins of Optoelectronic Properties in Coumarin Dyes: Toward Designer Solar Cell and Laser Applications. The Journal of Physical Chemistry A, 116(1), 727-737. doi:10.1021/jp209925y
  • Nicollian, E. H., & Brews, J. R. (1982). Metal oxide semiconductor (MOS) physics and technology. Wiley.
  • Sharma, M., & Tripathi, S. K. (2013). Analysis of interface states and series resistance for Al/PVA: N-CdS nanocomposite metal-semiconductor and metal-insulator-semiconductor diode structures. Applied Physics A: Materials Science & Processing, 113(2), 491-499. doi:10.1007/s00339-013-7552-3
  • Sze, S. M. (1981). Physics of Semiconductor Devices (2nd Ed.). Wiley.
  • Wang, Z.-S., Hara, K., Dan-oh, Y., Kasada, C., Shinpo, A., Suga, S., Arakawa, H., & Sugihara, H. (2005). Photophysical and (Photo)electrochemical Properties of a Coumarin Dye. The Journal of Physical Chemistry B, 109(9), 3907-3914. doi:10.1021/jp044851v
Year 2023, , 53 - 61, 28.03.2023
https://doi.org/10.54287/gujsa.1202745

Abstract

Project Number

FMB-BAP 17-0292

References

  • Ashery, A., Gad, S. A., & Turky, G. M. (2021). Analysis of Electrical and Capacitance–Voltage of PVA/nSi. Journal of Electronic Materials, 50(6), 3498-3516. doi:10.1007/s11664-021-08867-y
  • Card, H. C., & Rhoderick, E. H. (1971). Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. Journal of Physics D: Applied Physics, 4(10), 1589-1601. doi:10.1088/0022-3727/4/10/319
  • Cetinkaya, H. G., Cicek, O., Altindal, S., Badali, Y., & Demirezen, S. (2022). Vertical CdTe:PVP/ p -Si-Based Temperature Sensor by Using Aluminum Anode Schottky Contact. IEEE Sensors Journal, 22(23), 22391-22397. doi:10.1109/JSEN.2022.3212867
  • Çokduygulular, E., Çetinkaya, Ç., Yalçın, Y., & Kınacı, B. (2020). A comprehensive study on Cu-doped ZnO (CZO) interlayered MOS structure. Journal of Materials Science: Materials in Electronics, 31(16), 13646-13656. doi:10.1007/s10854-020-03922-6
  • Demirezen, S., Çetinkaya, H. G., & Altındal, Ş. (2022). Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range. Silicon, 14(14), 8517-8527. doi:10.1007/s12633-021-01640-0
  • Demirezen, S., & Altındal Yerişkin, S. (2020). A detailed comparative study on electrical and photovoltaic characteristics of Al/p-Si photodiodes with coumarin-doped PVA interfacial layer: the effect of doping concentration. Polymer Bulletin, 77(1), 49-71. doi:10.1007/s00289-019-02704-3
  • Ghouili, A., Dusek, M., Petricek, V., Ayed, T. B., & Hassen, R. B. (2014). Synthesis, crystal structure and spectral characteristics of highly fluorescent chalcone-based coumarin in solution and in polymer matrix. Journal of Physics and Chemistry of Solids, 75(2), 188-193. doi:10.1016/j.jpcs.2013.09.011
  • Hill, W. A., & Coleman, C. C. (1980). A single-frequency approximation for interface-state density determination. Solid-State Electronics, 23(9), 987-993. doi:10.1016/0038-1101(80)90064-7
  • Liu, X., Cole, J. M., Waddell, P. G., Lin, T.-C., Radia, J., & Zeidler, A. (2012). Molecular Origins of Optoelectronic Properties in Coumarin Dyes: Toward Designer Solar Cell and Laser Applications. The Journal of Physical Chemistry A, 116(1), 727-737. doi:10.1021/jp209925y
  • Nicollian, E. H., & Brews, J. R. (1982). Metal oxide semiconductor (MOS) physics and technology. Wiley.
  • Sharma, M., & Tripathi, S. K. (2013). Analysis of interface states and series resistance for Al/PVA: N-CdS nanocomposite metal-semiconductor and metal-insulator-semiconductor diode structures. Applied Physics A: Materials Science & Processing, 113(2), 491-499. doi:10.1007/s00339-013-7552-3
  • Sze, S. M. (1981). Physics of Semiconductor Devices (2nd Ed.). Wiley.
  • Wang, Z.-S., Hara, K., Dan-oh, Y., Kasada, C., Shinpo, A., Suga, S., Arakawa, H., & Sugihara, H. (2005). Photophysical and (Photo)electrochemical Properties of a Coumarin Dye. The Journal of Physical Chemistry B, 109(9), 3907-3914. doi:10.1021/jp044851v
There are 13 citations in total.

Details

Primary Language English
Journal Section Physics
Authors

Selçuk Demirezen 0000-0001-7462-0251

Project Number FMB-BAP 17-0292
Publication Date March 28, 2023
Submission Date November 11, 2022
Published in Issue Year 2023

Cite

APA Demirezen, S. (2023). A Study on the Wide Frequency Range Electrical Variables in the Al/Coumarin–PVA/p-Si Diodes at Room Temperature. Gazi University Journal of Science Part A: Engineering and Innovation, 10(1), 53-61. https://doi.org/10.54287/gujsa.1202745