Research Article
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Year 2023, , 9 - 19, 28.03.2023
https://doi.org/10.54287/gujsa.1206972

Abstract

References

  • Altındal Yerişkin, S. (2019). The investigation of effects of (Fe2O4-PVP) organic-layer, surface states, and serial resistance on the electrical characteristics and the sources of them. Journal of Materials Science: Materials in Electronics, 30, 17032-17039. doi:10.1007/s10854-019-02045-x
  • Ashajyothi, S., & Reddy, V. R. (2021). Influence of tin oxide (SnO2) interlayer on the electrical and reverse current conduction mechanism of Au/n-InP Schottky junction and its microstructural properties. Thin Solid Films, 740, 139001. doi:10.1016/j.tsf.2021.139001
  • Baydilli, E. E., Tan, S. O., Tecimer, H. U., & Altındal, S. (2020). Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures. Physica B Condens Matter, 598, 412457. doi:10.1016/j.physb.2020.412457
  • Bohlin, K. E. (1986). Generalized Norde plot including determination of the ideality factor. Journal of Applied Physics, 60(3), 1223-1224. doi:10.1063/1.337372
  • Cheung, S. K., & Cheung, N. W. (1986). Extraction of Schottky diode parameters from forward current‐voltage characteristics. Applied Physics Letters, 49(2), 85-87. doi:10.1063/1.97359
  • Çaldıran, Z. (2020). Fabrication of Schottky barrier diodes with the lithium fluoride interface layer and electrical characterization in a wide temperature range. Journal of Alloys and Compounds, 816, 152601. doi:10.1016/j.jallcom.2019.152601
  • Çiçek, O., Tecimer, H. U., Tan, S. O., Tecimer, H., Altındal, Ş., & Uslu, İ. (2016). Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions. Composites Part B: Engineering, 98, 260-268. doi:10.1016/j.compositesb.2016.05.042
  • Deniz, A. R., Taş, A. İ., Çaldıran, Z., İncekara, Ü., Biber, M., Aydoğan, Ş., & Türüt, A. (2022). Effects of PEDOT:PSS and crystal violet interface layers on current-voltage performance of Schottky barrier diodes as a function of temperature and variation of diode capacitance with frequency. Current Applied Physics, 39, 173-182. doi:10.1016/j.cap.2022.03.017
  • Evcin Baydilli, E., Altındal, S., Tecimer, H., Kaymaz, A., & Uslu Tecimer, H. (2020). The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD). Journal of Materials Science: Materials in Electronics, 31, 17147-17157. doi:10.1007/s10854-020-03799-5
  • Helal, H., Benamara, Z., Arbia, M. B., Khettou, A., Rabehi, A., Kacha, A. H., & Amrani, M. (2020). A study of current-voltage and capacitance-voltage characteristics of Au/n-GaAs and Au/GaN/n-GaAs Schottky diodes in wide temperature range. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 33(4), e2714. doi:10.1002/jnm.2714
  • Norde, H. (1979). A modified forward I ‐ V plot for Schottky diodes with high serial resistance. Journal of Applied Physics, 50(7), 5052-5053. doi:10.1063/1.325607
  • Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004). Electric Field Effect in Atomically Thin Carbon Films, 306(5696), 666-669. doi:10.1126/science.1102896
  • Özdemir, A. F., Göksu, T., Yıldırım, N., Turut., A. (2021). Effects of measurement temperature and metal thickness on Schottky diode characteristics. Physica B Condens Matter, 616, 413125. doi:10.1016/j.physb.2021.413125
  • Pehlivanoglu, S. A. (2021). Fabrication of p-Si/n-NiO:Zn photodiodes and current/capacitance-voltage characterizations. Physica B Condens Matter, 603, 412482. doi:10.1016/j.physb.2020.412482
  • Rhoderick, E. H. (1978). Metal-Semiconductor Contacts. Clarendon Press Oxford.
  • Sadao, A. (2005). Properties of Group-IV, III-V and II-VI Semiconductors. Hoboken (USA) Wiley&Sons.
  • Sato, K., & Yasumura, Y. (1985). Study of forward I ‐ V plot for Schottky diodes with high serial resistance. Journal of Applied Physics, 58(9), 3655-3657. doi:10.1063/1.335750
  • Sevgili, Ö., Orak, İ., & Tiras, K. S. (2022). The examination of the electrical properties of Al/Mg2Si/p-Si Schottky diodes with an ecofriendly interfacial layer depending on temperature and frequency. Physica E: Low-dimensional Systems and Nanostructures, 144, 115380. doi:10.1016/j.physe.2022.115380
  • Taşyürek, L. B., Aydoğan, Ş., Sevim, M., & Çaldıran, Z. (2022). Analysis of the temperature dependent electrical parameters of the heterojunction obtained with Au nanoparticles decorated perovskite strontium titanate nanocubes. Journal of Alloys and Compounds, 914, 165140. doi: 10.1016/j.jallcom.2022.165140
  • Uslu, H., Altındal, S., Aydemir, U., Dökme, I., & Afandiyeva, I. M. (2010). The interface states and serial resistance effects on the forward and reverse bias I-V, C-V and G/ω-V characteristics of Al-TiW-Pd 2Si/n-Si Schottky barrier diodes. Journal of Alloys and Compounds, 503(1), 96-102. doi:10.1016/j.jallcom.2010.04.210
  • Werner, J. H., & Güttler, H. H. (1991). Barrier inhomogeneities at Schottky contacts. Journal of Applied Physics, 69(3), 1522-1533. doi:10.1063/1.347243

The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures

Year 2023, , 9 - 19, 28.03.2023
https://doi.org/10.54287/gujsa.1206972

Abstract

To enable comparison with the literature, this study seeks to assess the temperature susceptibility of serial resistance (Rs) features of the Au/n-GaAs type M/S structure, which is acceptable the benchmark sample. The serial resistance features of the sample were computed separately withal principal of Ohm, Norde, and Cheungs' functions. The current-voltage (I-V) data used in order to compute were evaluated at the voltage values between +2V and -2 V and temperature values between 120K and 360K in 60K steps. Each computation method was also compared one another other. As a result, the fact that the Rs values computed using principal of Ohm, Norde functions and Cheungs' functions tended to reduce with rising temperature, as anticipated by the literature results. In addition, it was determined that, with only tiny variations, the temperature susceptibility of Rs is consistent across all computation methods. In addition, as a result of the comparison with the literature, it was concluded serial resistance is less of an issue when a polymer interfacial layer is present at the metal-semiconductor contact region. The Rs parameter of the M/S structure is, in essence, a sensitive function of temperature and input voltage.

References

  • Altındal Yerişkin, S. (2019). The investigation of effects of (Fe2O4-PVP) organic-layer, surface states, and serial resistance on the electrical characteristics and the sources of them. Journal of Materials Science: Materials in Electronics, 30, 17032-17039. doi:10.1007/s10854-019-02045-x
  • Ashajyothi, S., & Reddy, V. R. (2021). Influence of tin oxide (SnO2) interlayer on the electrical and reverse current conduction mechanism of Au/n-InP Schottky junction and its microstructural properties. Thin Solid Films, 740, 139001. doi:10.1016/j.tsf.2021.139001
  • Baydilli, E. E., Tan, S. O., Tecimer, H. U., & Altındal, S. (2020). Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures. Physica B Condens Matter, 598, 412457. doi:10.1016/j.physb.2020.412457
  • Bohlin, K. E. (1986). Generalized Norde plot including determination of the ideality factor. Journal of Applied Physics, 60(3), 1223-1224. doi:10.1063/1.337372
  • Cheung, S. K., & Cheung, N. W. (1986). Extraction of Schottky diode parameters from forward current‐voltage characteristics. Applied Physics Letters, 49(2), 85-87. doi:10.1063/1.97359
  • Çaldıran, Z. (2020). Fabrication of Schottky barrier diodes with the lithium fluoride interface layer and electrical characterization in a wide temperature range. Journal of Alloys and Compounds, 816, 152601. doi:10.1016/j.jallcom.2019.152601
  • Çiçek, O., Tecimer, H. U., Tan, S. O., Tecimer, H., Altındal, Ş., & Uslu, İ. (2016). Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions. Composites Part B: Engineering, 98, 260-268. doi:10.1016/j.compositesb.2016.05.042
  • Deniz, A. R., Taş, A. İ., Çaldıran, Z., İncekara, Ü., Biber, M., Aydoğan, Ş., & Türüt, A. (2022). Effects of PEDOT:PSS and crystal violet interface layers on current-voltage performance of Schottky barrier diodes as a function of temperature and variation of diode capacitance with frequency. Current Applied Physics, 39, 173-182. doi:10.1016/j.cap.2022.03.017
  • Evcin Baydilli, E., Altındal, S., Tecimer, H., Kaymaz, A., & Uslu Tecimer, H. (2020). The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD). Journal of Materials Science: Materials in Electronics, 31, 17147-17157. doi:10.1007/s10854-020-03799-5
  • Helal, H., Benamara, Z., Arbia, M. B., Khettou, A., Rabehi, A., Kacha, A. H., & Amrani, M. (2020). A study of current-voltage and capacitance-voltage characteristics of Au/n-GaAs and Au/GaN/n-GaAs Schottky diodes in wide temperature range. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 33(4), e2714. doi:10.1002/jnm.2714
  • Norde, H. (1979). A modified forward I ‐ V plot for Schottky diodes with high serial resistance. Journal of Applied Physics, 50(7), 5052-5053. doi:10.1063/1.325607
  • Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004). Electric Field Effect in Atomically Thin Carbon Films, 306(5696), 666-669. doi:10.1126/science.1102896
  • Özdemir, A. F., Göksu, T., Yıldırım, N., Turut., A. (2021). Effects of measurement temperature and metal thickness on Schottky diode characteristics. Physica B Condens Matter, 616, 413125. doi:10.1016/j.physb.2021.413125
  • Pehlivanoglu, S. A. (2021). Fabrication of p-Si/n-NiO:Zn photodiodes and current/capacitance-voltage characterizations. Physica B Condens Matter, 603, 412482. doi:10.1016/j.physb.2020.412482
  • Rhoderick, E. H. (1978). Metal-Semiconductor Contacts. Clarendon Press Oxford.
  • Sadao, A. (2005). Properties of Group-IV, III-V and II-VI Semiconductors. Hoboken (USA) Wiley&Sons.
  • Sato, K., & Yasumura, Y. (1985). Study of forward I ‐ V plot for Schottky diodes with high serial resistance. Journal of Applied Physics, 58(9), 3655-3657. doi:10.1063/1.335750
  • Sevgili, Ö., Orak, İ., & Tiras, K. S. (2022). The examination of the electrical properties of Al/Mg2Si/p-Si Schottky diodes with an ecofriendly interfacial layer depending on temperature and frequency. Physica E: Low-dimensional Systems and Nanostructures, 144, 115380. doi:10.1016/j.physe.2022.115380
  • Taşyürek, L. B., Aydoğan, Ş., Sevim, M., & Çaldıran, Z. (2022). Analysis of the temperature dependent electrical parameters of the heterojunction obtained with Au nanoparticles decorated perovskite strontium titanate nanocubes. Journal of Alloys and Compounds, 914, 165140. doi: 10.1016/j.jallcom.2022.165140
  • Uslu, H., Altındal, S., Aydemir, U., Dökme, I., & Afandiyeva, I. M. (2010). The interface states and serial resistance effects on the forward and reverse bias I-V, C-V and G/ω-V characteristics of Al-TiW-Pd 2Si/n-Si Schottky barrier diodes. Journal of Alloys and Compounds, 503(1), 96-102. doi:10.1016/j.jallcom.2010.04.210
  • Werner, J. H., & Güttler, H. H. (1991). Barrier inhomogeneities at Schottky contacts. Journal of Applied Physics, 69(3), 1522-1533. doi:10.1063/1.347243
There are 21 citations in total.

Details

Primary Language English
Journal Section Electrical & Electronics Engineering
Authors

Esra Evcin Baydilli 0000-0001-8582-5041

Publication Date March 28, 2023
Submission Date November 18, 2022
Published in Issue Year 2023

Cite

APA Evcin Baydilli, E. (2023). The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures. Gazi University Journal of Science Part A: Engineering and Innovation, 10(1), 9-19. https://doi.org/10.54287/gujsa.1206972