An Informetric View to the Negative Capacitance Phenomenon at Interlayered Metal-Semiconductor Structures and Distinct Electronic Devices

Year 2023, , 511 - 523, 31.12.2023

Nuray Urgun , Jaafar Alsmael , Serhat Orkun Tan

https://doi.org/10.54287/gujsa.1357391

Abstract

Negative Capacitance (NC) phenomenon, which can be explained as the material exhibiting an inductive behavior, is often referred to as "anomalous" or "abnormal" in the literature. Especially in the forward bias/deposition region, the presence of surface states (Nss) and their relaxation times (τ), series resistance (Rs), minority carrier injection, interface charge loss in occupied states under the Fermi energy level, parasitic inductance, or poor measuring equipment calibration problems can be counted among the causes of this phenomenon. Studies on NC behavior have shown that this behavior can be observed for different frequencies, temperatures, and related parameters at forward biases. However, the NC behavior, which appears as an unidentified peak in admittance spectroscopy data, is not yet fully understood. Ultimately, this study aims to compile and analyze the NC reported in selected scientific studies, investigate the source of this phenomenon, and observe statistics in a general view.

Keywords

Negative Capacitance, Metal-Semiconductor Structures, Interlayer, NC Devices, Data Classifying

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