Zeolite A Thin Film Growth on Silica Optical Fibers

Abstract

Thin films of zeolite A (Linde type A, LTA) were fabricated on silica optical fibers using dip coating method, followed by a secondary growth process. Zeolite A seed crystals with an average crystal size of 247.3 nm were synthesized through hydrothermal method. Then, the dip coating technique was applied to coat silica optical fibers. The one and two-time dip coating resulted in island-like growth, while three-time dip coating process led to the intergrowth of seed crystals, resulting in nearly continuous films on the optical fiber. The seed crystals, initially deposited as a monolayer, were grown by secondary growth method, leading to film thicknesses of 255.3 nm ± 10.1 nm (average ± standard deviation). Upon extending the secondary growth reaction time from 2 hours to 4 hours, the film thickness increased from 255.3 nm ± 10.1 nm to 649.6 nm ± 28.1 nm. Epitaxial growth was identified as the mechanism through which the seed crystals grow. The nanoporous zeolite A films formed on the optical fiber exhibit potential applications as gas sensors. These sensors function by detecting changes in optical reflection caused by the differential adsorption of gases.

Keywords

• Zeolite A
• Thin Films
• Nanoporous
• Secondary Growth

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