Analysis of Frequency and Voltage Dependent Electrical Features of Au/Si3N4/p-GaAs (MIS) Device at Room Temperature

Year 2024, , 372 - 378, 29.06.2024

Raziye Ertuğrul Uyar

https://doi.org/10.54287/gujsa.1477157

Cited By: 1

Abstract

The investigation presented here deals with the comprehensive analysis of the C-V-f and G/ω-V-f characteristics of the Au/Si3N4/p-GaAs (MIS) device. These measurements were performed at 300 K and covered a frequency of between 10 kHz–1 MHz. The determination of the Rs was facilitated by the use of the conductance method, while the evaluation of the Nss of the MIS device was performed according to the Hill-Coleman method. A noteworthy observation concerns the significant frequency dispersion observed in the C-V-f and G/ω-V-f features of the MIS devices, particularly noticeable at low frequencies, which is attributable to the influence of Rs and Nss. Furthermore, the determination of the high-frequency Cm and Gm/ω involved measurements under both reverse and forward-biased conditions, followed by careful adjustments to mitigate the effects of Rs. This meticulous procedure culminated in the derivation of the true capacitance values inherent in semiconductor structure.

Keywords

Silicon Nitride (Si3N4), MIS Device, Capacitance, Conductance, Series Resistance, Interface States

References

• Buyukbas‑Uluşan, A., & Tataroğlu, A. (2020). Electrical characterization of silicon nitride interlayer‑based MIS diode. Journal of Materials Science: Materials in Electronics, 31(12), 9888-9893. https://doi.org/10.1007/s10854-020-03533-1
• Demirezen, S., Dere, A., Çetinkaya, H. G., Al-Sehemi, A. G., Al-Ghamdi, A.A, & Yakuphanoğlu, F. (2023). Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications. Physica Scripta, 98(11), 115916. https://doi.org/10.1088/1402-4896/acfce2
• Güçlü, Ç. Ş., Erbilen Tanrıkulu, E., Ulusoy, M., Azizian Kalandargh, Y., & Altındal, Ş. (2024). Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method. Journal of Materials Science: Materials in Electronics, 35(5), 348. https://doi.org/10.1007/s10854-024-12111-8
• Güneşer, M. T, Elamen, H., Badali, Y., & Altíndal, Ş. (2023). Frequency dependent electrical and dielectric properties of the Au/(RuO2:PVC)/n-Si (MPS) structures. Physica B: Condensed Matter, 657, 414791. https://doi.org/10.1016/j.physb.2023.414791
• Hill, W. A., & Coleman, C. C. (1980). A single-frequency approximation for interface-state density determination. Solid-State Electronics, 23(9), 987-993. https://doi.org/10.1016/0038-1101(80)90064-7
• Jhansirani, K., Dubey, R. S., More, M. A., & Singh, S. (2016). Deposition of silicon nitride films using chemical vapor deposition for photovoltaic applications. Results in Physics, 6, 1059-1063. https://doi.org/10.1016/j.rinp.2016.11.029
• Nicollian, E. H., & Brews, J. R. (1982). MOS (Metal Oxide Semiconductor) Physics and Technology. Wiley, New York.
• Nicollian, E. H., & Goetzberger, A. (1967). The Si-SiO2 Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique. Bell System Technical Journal, 46(6), 1055-1133. https://doi.org/10.1002/j.1538-7305.1967.tb01727.x
• Osiris, W. G., Farag, A. A. M., & Yahia, I. S. (2011). Extraction of the device parameters of Al/P3OT/ITO organic Schottky diode using J–V and C–V characteristics. Synthetic Metals, 161(11-12), 1079-1087. https://doi.org/10.1016/j.synthmet.2011.03.019
• Reddy, V. R., Reddy, M. S. P., Lakshmi, B. P., & Kumar, A. A. (2011). Electrical characterization of Au/n-GaN metal-semiconductor and Au/SiO2/n-GaN metal-insulatorsemiconductor structures. Journal of Alloys and Compounds, 509(31), 8001-8007. https://doi.org/10.1016/j.jallcom.2011.05.055
• Rhoderick, E. H., & Williams, R. H. (1988). Metal-Semiconductor Contacts (Monographs in Electrical and Electronic Engineering (2nd Ed.). Oxford: Clarendon Press.
• Riley, F. L. (2000). Silicon Nitride and Related Materials. Journal of the American Ceramic Society, 83(2), 245-265. https://doi.org/10.1111/j.1151-2916.2000.tb01182.x
• Sevgili, Ö., Azizian-Kalandaragh, Y., & Altındal, Ş. (2020). Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures. Physica B: Condensed Matter, 587, 412122. https://doi.org/10.1016/j.physb.2020.412122
• Sze, S. M. (1981). Physics of Semiconductor Devices (2nd Ed.). Newyork: Wiley.
• Tataroğlu, A., Altındal, Ş., & Azizian-Kalandaragh, Y. (2020). C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure. Physica B: Condensed Matter, 582, 411996. https://doi.org/10.1016/j.physb.2020.411996
• Tataroğlu, B., Altındal Ş., & Tataroğlu A. (2006). The C–V–f and G/ω–V–f characteristics of Al/SiO2/p-Si (MIS) structures. Microelectronic Engineering, 83(10), 2021-2026. https://doi.org/10.1016/j.mee.2006.04.002
• Türkay, S., & Tataroğlu A. (2021). Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor. Journal of Materials Science: Materials in Electronics, 32(9), 11418-11425. https://doi.org/10.1007/s10854-021-05349-z