Optical Characterization of Boron Doped In2O3 Thin Films

Mehmet Temiz

doi:10.54287/gujsa.1968187

Optical Characterization of Boron Doped In2O3 Thin Films

Abstract

Indium oxide (In₂O₃) thin films are valuable materials for optoelectronic applications owing to their wide band gap, high transparency, and modifiable electrical properties. This study focuses on the comprehensive optical characterization of undoped and boron-doped In₂O₃ thin films with various boron concentrations (0.02, 0.03, 0.06, and 0.09 M) prepared by spray pyrolysis. Systematic analysis of transmittance and reflection spectra measured using a JASCO spectrophotometer (300–2000 nm range, 2 nm pitch) resulted in the determination of various fundamental optical parameters such as absorbance, absorption coefficient, optical band gap, refractive index, extinction coefficient, dielectric constants, and optical conductivity. The undoped In₂O₃ film was found to have a direct band gap of 3.37 eV with the sharp absorption edge located in the UV region (300–400 nm) and an average refractive index of 2.31. Also, the film exhibited moderate optical transmittance in the visible range (400–700 nm) with transmittance values generally below % 70. It was observed that the calculated optical properties changed systematically with the addition of boron. For example, band gaps ranged from 2.88 eV (0.06 M) to 3.46 eV (0.09 M), while refractive indices ranged from 2.34 (0.09 M) to 2.58 (0.03 M). The results show that the addition of boron will be an effective method for controlling optical properties and that boron-doped indium oxide films will be an important material for transparent conductive oxide applications and thin-film transistor technologies. This study focuses on a comprehensive analysis of the optical parameters of In₂O₃:B films. The scope of the study is limited to optical characterization, and the results are supported by correlation with the author's previous structural and electrical studies. This approach reveals the relationship between optical changes and crystal structure and carrier mechanisms.

Keywords

References

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Details

Primary Language

English

Subjects

Condensed Matter Physics (Other)

Journal Section

Research Article

Authors

Mehmet Temiz ^*
0000-0003-2974-8824
Türkiye

Early Pub Date

September 29, 2026

Publication Date

September 30, 2026

Submission Date

June 11, 2026

Acceptance Date

July 28, 2026

Published in Issue

Year 2026 Volume: 13 Number: 3

DOI

https://doi.org/10.54287/gujsa.1968187

IZ

https://izlik.org/JA85UP26WJ

Cite

RIS / Bibtex

APA

Temiz, M. (2026). Optical Characterization of Boron Doped In2O3 Thin Films. Gazi University Journal of Science Part A: Engineering and Innovation, 13(3), 1354-1372. https://doi.org/10.54287/gujsa.1968187

AMA

1.Temiz M. Optical Characterization of Boron Doped In2O3 Thin Films. GU J Sci, Part A. 2026;13(3):1354-1372. doi:10.54287/gujsa.1968187

Chicago

Temiz, Mehmet. 2026. “Optical Characterization of Boron Doped In2O3 Thin Films”. Gazi University Journal of Science Part A: Engineering and Innovation 13 (3): 1354-72. https://doi.org/10.54287/gujsa.1968187.

EndNote

Temiz M (September 1, 2026) Optical Characterization of Boron Doped In2O3 Thin Films. Gazi University Journal of Science Part A: Engineering and Innovation 13 3 1354–1372.

IEEE

[1]M. Temiz, “Optical Characterization of Boron Doped In2O3 Thin Films”, GU J Sci, Part A, vol. 13, no. 3, pp. 1354–1372, Sept. 2026, doi: 10.54287/gujsa.1968187.

ISNAD

Temiz, Mehmet. “Optical Characterization of Boron Doped In2O3 Thin Films”. Gazi University Journal of Science Part A: Engineering and Innovation 13/3 (September 1, 2026): 1354-1372. https://doi.org/10.54287/gujsa.1968187.

JAMA

1.Temiz M. Optical Characterization of Boron Doped In2O3 Thin Films. GU J Sci, Part A. 2026;13:1354–1372.

MLA

Temiz, Mehmet. “Optical Characterization of Boron Doped In2O3 Thin Films”. Gazi University Journal of Science Part A: Engineering and Innovation, vol. 13, no. 3, Sept. 2026, pp. 1354-72, doi:10.54287/gujsa.1968187.

Vancouver

1.Mehmet Temiz. Optical Characterization of Boron Doped In2O3 Thin Films. GU J Sci, Part A. 2026 Sep. 1;13(3):1354-72. doi:10.54287/gujsa.1968187