Effect of Annealing and Doping Process of the Zn1-xTixO Films

Year 2023, Volume: 10 Issue: 3, 341 - 352, 29.09.2023

Tuğba Çorlu , Sezen Tekin , Irmak Karaduman Er , Selim Acar

https://doi.org/10.54287/gujsa.1345002

Cited By: 1

Abstract

In this study, undoped and Ti-doped ZnO thin films grown by SILAR (Successive Ionic Layer Adsorption and Reaction) method were investigated using XRD, SEM, linear absorbance and electrical characterization. The effect of doping ratio was determined changing Ti ratios from 0.05 to 0.20. In addition, the films with the same additive ratio were annealed at 300°C for 15 minutes in nitrogen environment. Thus, the effects of both annealing and doping ratio on the thin films produced were examined in detail. When the current-voltage graphs are examined, it is observed that there is a decrease in the resistance values with doping. The best additive effect was observed for Zn0.90Ti0.10O film and the structures formed after this additive ratio returned to their initial morphology.

Keywords

Ti-doped ZnO, SILAR, Annealing, Characterization

Supporting Institution

Gazi University Scientific Research Fund

Project Number

FDK-2023-8722

Thanks

This study was financially supported by Gazi University Scientific Research Fund [project code: FDK-2023-8722].

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