Year 2021, Volume 8 , Issue 1, Pages 1 - 5 2021-03-31

Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†

Merve ACAR [1] , Soheil MOBTAKERİ [2] , Mehmet ERTUĞRUL [3] , Emre GÜR [4]


Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as lattice compatibility. In this study, magnetron sputtering technique was used to grow layered tungsten disulfide (WS2) thin films onto p-Si and thus WS2/p-Si heterojunctions were created. The structural and chemical parameters of this sputtered WS2 films were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Electrical characterization of WS2/p-Si heterojunction was also obtained to investigate Log (I)-V and linear I-V characteristics. A typical diode like I-V behavior was observed with a five-ordered rectifying ratio. It was observed that the heterojunction has a barrier height of 0.48 eV, the leakage current at -0.2 V is 2.25×10-6 A and the ideality factor is 5.7. This work show that single step magnetron sputtering WS2/p-Si heterojunction has great importance for heterojunction based future nanoelectronic devices.
2D materials, TMDC, WS2, 2D/3D heterojunctions
  • Jariwala, D.; Marks, T. J.; Hersam, M. C., Mixed-dimensional vander Waals heterostructures. Nature materials 2017, 16 (2), 170-181. Liu, B. L.; Abbas, A.; Zhou, C. W., Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications. Adv Electron Mater 2017, 3 (7).
  • Shim, J.; Park, H. Y.; Kang, D. H.; Kim, J. O.; Jo, S. H.; Park, Y.; Park, J. H., Electronic and Optoelectronic Devices based on Two-Dimensional Materials: From Fabrication to Application. Adv Electron Mater 2017, 3 (4).
  • Choi, W.; Choudhary, N.; Han, G. H.; Park, J.; Akinwande, D.; Lee, Y. H., Recent development of two-dimensional transition metal dichalcogenides and their applications. Mater Today 2017, 20 (3), 116-130.
  • Sumesh, C. K., Temperature dependant electronic charge transport characteristics at MX2 (M=Mo,W; X=S, Se)/Si heterojunction devices. J Mater Sci-Mater El 2019, 30 (4), 4117-4127.
  • Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S., Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature nanotechnology 2012, 7 (11), 699.
  • Ahmed, S.; Yi, J., Two-dimensional transition metal dichalcogenides and their charge carrier mobilities in field-effect transistors. Nano-Micro Lett 2017, 9 (4), 50.
  • Ye, M.; Zhang, D.; Yap, Y. K., Recent advances in electronic and optoelectronic devices based on two-dimensional transition metal dichalcogenides. Electronics 2017, 6 (2), 43.
  • Dong, R.; Kuljanishvili, I., Progress in fabrication of transition metal dichalcogenides heterostructure systems. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 2017, 35 (3), 030803.
  • Gupta, P.; Rahman, A.; Subramanian, S.; Gupta, S.; Thamizhavel, A.; Orlova, T.; Rouvimov, S.; Vishwanath, S.; Protasenko, V.; Laskar, M. R., Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth. Sci Rep-Uk 2016, 6, 23708.
  • Wang, J. W.; Li, Z. Q.; Chen, H. Y.; Deng, G. W.; Niu, X. B., Recent Advances in 2D Lateral Heterostructures. Nano-Micro Lett 2019, 11 (1).
  • O'Regan, T. P.; Ruzmetov, D.; Neupane, M. R.; Burke, R. A.; Herzing, A. A.; Zhang, K.; Birdwell, A. G.; Taylor, D. E.; Byrd, E. F.; Walck, S. D., Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN. Appl Phys Lett 2017, 111 (5), 051602.
  • Li, B.; Shi, G.; Lei, S.; He, Y.; Gao, W.; Gong, Y.; Ye, G.; Zhou, W.; Keyshar, K.; Hao, J., 3D band diagram and photoexcitation of 2D–3D semiconductor heterojunctions. Nano Lett 2015, 15 (9), 5919-5925.
  • Krishnamoorthy, S.; Lee, E. W.; Lee, C. H.; Zhang, Y.; McCulloch, W. D.; Johnson, J. M.; Hwang, J.; Wu, Y.; Rajan, S., High current density 2D/3D MoS2/GaN Esaki tunnel diodes. Appl Phys Lett 2016, 109 (18), 183505.
  • Esmaeili-Rad, M. R.; Salahuddin, S., High performance molybdenum disulfide amorphous silicon heterojunction photodetector. Sci Rep-Uk 2013, 3 (1), 1-6.
  • Hao, L.; Liu, Y.; Gao, W.; Han, Z.; Xue, Q.; Zeng, H.; Wu, Z.; Zhu, J.; Zhang, W., Electrical and photovoltaic characteristics of MoS2/Si pn junctions. J Appl Phys 2015, 117 (11), 114502.
  • Hao, L.; Liu, Y.; Han, Z.; Xu, Z.; Zhu, J., Large lateral photovoltaic effect in MoS 2/GaAs heterojunction. Nanoscale research letters 2017, 12 (1), 562.
  • Lin, S.; Wang, P.; Li, X.; Wu, Z.; Xu, Z.; Zhang, S.; Xu, W., Gate tunable monolayer MoS2/InP heterostructure solar cells. Appl Phys Lett 2015, 107 (15), 153904.
  • Lee, E. W.; Ma, L.; Nath, D. N.; Lee, C. H.; Arehart, A.; Wu, Y.; Rajan, S., Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions. Appl Phys Lett 2014, 105 (20), 203504.
  • Din, H.; Idrees, M.; Rehman, G.; Nguyen, C. V.; Gan, L.-Y.; Ahmad, I.; Maqbool, M.; Amin, B., Electronic structure, optical and photocatalytic performance of SiC–MX 2 (M= Mo, W and X= S, Se) van der Waals heterostructures. Phys Chem Chem Phys 2018, 20 (37), 24168-24175.
  • Zhang, K.; Jariwala, B.; Li, J.; Briggs, N. C.; Wang, B.; Ruzmetov, D.; Burke, R. A.; Lerach, J. O.; Ivanov, T. G.; Haque, M., Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides. Nanoscale 2018, 10 (1), 336-341.
  • Ruzmetov, D.; Zhang, K.; Stan, G.; Kalanyan, B.; Bhimanapati, G. R.; Eichfeld, S. M.; Burke, R. A.; Shah, P. B.; O’Regan, T. P.; Crowne, F. J., Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride. Acs Nano 2016, 10 (3), 3580-3588.
  • Liao, J.; Sa, B.; Zhou, J.; Ahuja, R.; Sun, Z., Design of high-efficiency visible-light photocatalysts for water splitting: MoS2/AlN (GaN) heterostructures. The Journal of Physical Chemistry C 2014, 118 (31), 17594-17599.
  • Jeong, H.; Bang, S.; Oh, H. M.; Jeong, H. J.; An, S.-J.; Han, G. H.; Kim, H.; Kim, K. K.; Park, J. C.; Lee, Y. H., Semiconductor–insulator–semiconductor diode consisting of monolayer MoS2, h-BN, and GaN heterostructure. Acs Nano 2015, 9 (10), 10032-10038.
  • Lee, E. W.; Lee, C. H.; Paul, P. K.; Ma, L.; McCulloch, W. D.; Krishnamoorthy, S.; Wu, Y.; Arehart, A. R.; Rajan, S., Layer-transferred MoS2/GaN PN diodes. Appl Phys Lett 2015, 107 (10), 103505.
  • Tangi, M.; Mishra, P.; Ng, T. K.; Hedhili, M. N.; Janjua, B.; Alias, M. S.; Anjum, D. H.; Tseng, C.-C.; Shi, Y.; Joyce, H. J., Determination of band offsets at GaN/single-layer MoS2 heterojunction. Appl Phys Lett 2016, 109 (3), 032104.
  • Nourbakhsh, A.; Zubair, A.; Dresselhaus, M. S.; Palacios, T. s., Transport properties of a MoS2/WSe2 heterojunction transistor and its potential for application. Nano Lett 2016, 16 (2), 1359-1366.
  • Roy, T.; Tosun, M.; Cao, X.; Fang, H.; Lien, D.-H.; Zhao, P.; Chen, Y.-Z.; Chueh, Y.-L.; Guo, J.; Javey, A., Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors. Acs Nano 2015, 9 (2), 2071-2079.
  • Lee, C.-H.; Lee, G.-H.; Van Der Zande, A. M.; Chen, W.; Li, Y.; Han, M.; Cui, X.; Arefe, G.; Nuckolls, C.; Heinz, T. F., Atomically thin p–n junctions with van der Waals heterointerfaces. Nature nanotechnology 2014, 9 (9), 676.
  • Aftab, S.; Khan, M. F.; Min, K.-A.; Nazir, G.; Afzal, A. M.; Dastgeer, G.; Akhtar, I.; Seo, Y.; Hong, S.; Eom, J., Van der Waals heterojunction diode composed of WS2 flake placed on p-type Si substrate. Nanotechnology 2017, 29 (4), 045201.
  • Yu, Y.; Fong, P. W.; Wang, S.; Surya, C., Fabrication of WS 2/GaN pn Junction by Wafer-Scale WS 2 Thin Film Transfer. Sci Rep-Uk 2016, 6, 37833.
  • Zhao, Z. H.; Wu, D.; Guo, J. W.; Wu, E. P.; Jia, C.; Shi, Z. F.; Tian, Y. T.; Li, X. J.; Tian, Y. Z., Synthesis of large-area 2D WS2 films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications. J Mater Chem C 2019, 7 (39), 12121-12126.
  • Tang, H.; Zhang, H.; Chen, X.; Wang, Y.; Zhang, X.; Cai, P.; Bao, W., Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides. Science China Information Sciences 2019, 62 (12), 220401.
  • Zavabeti, A.; Jannat, A.; Zhong, L.; Haidry, A. A.; Yao, Z.; Ou, J. Z., Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications. Nano-Micro Lett 2020, 12 (1), 1-34.
  • Brent, J. R.; Savjani, N.; O'Brien, P., Synthetic approaches to two-dimensional transition metal dichalcogenide nanosheets. Prog Mater Sci 2017, 89, 411-478.
  • Cai, Z.; Liu, B.; Zou, X.; Cheng, H.-M., Chemical vapor deposition growth and applications of two-dimensional materials and their heterostructures. Chemical reviews 2018, 118 (13), 6091-6133.
  • Berkdemir, A.; Gutiérrez, H. R.; Botello-Méndez, A. R.; Perea-López, N.; Elías, A. L.; Chia, C.-I.; Wang, B.; Crespi, V. H.; López-Urías, F.; Charlier, J.-C., Identification of individual and few layers of WS 2 using Raman spectroscopy. Sci Rep-Uk 2013, 3 (1), 1-8.
  • Gora, V.; Chawanda, A.; Nyamhere, C.; Auret, F. D.; Mazunga, F.; Jaure, T.; Chibaya, B.; Omotoso, E.; Danga, H. T.; Tunhuma, S. M., Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide. Physica B: Condensed Matter 2018, 535, 333-337.
  • Wong, S. L.; Liu, H.; Chi, D., Recent progress in chemical vapor deposition growth of two-dimensional transition metal dichalcogenides. Progress in Crystal Growth and Characterization of Materials 2016, 62 (3), 9-28.
  • Koçak, Y.; Gür, E., Growth control of WS2; from 2D layer by layer to 3D vertical standing Nano-Walls. Acs Appl Mater Inter 2020.
Primary Language en
Subjects Engineering
Journal Section Research Article
Authors

Orcid: 0000-0001-7290-9983
Author: Merve ACAR
Institution: Atatürk Unviersity
Country: Turkey


Orcid: 0000-0003-3089-6162
Author: Soheil MOBTAKERİ
Institution: Atatürk University
Country: Turkey


Orcid: 0000-0003-1921-7704
Author: Mehmet ERTUĞRUL
Institution: Atatürk University
Country: Turkey


Orcid: 0000-0002-3606-2751
Author: Emre GÜR
Institution: Atatürk University
Country: Turkey


Dates

Application Date : May 30, 2020
Acceptance Date : December 27, 2020
Publication Date : March 31, 2021

Bibtex @research article { hjse907421, journal = {Hittite Journal of Science and Engineering}, issn = {}, eissn = {2148-4171}, address = {Hitit Üniversitesi Mühendislik Fakültesi Kuzey Kampüsü Çevre Yolu Bulvarı 19030 Çorum / TÜRKİYE}, publisher = {Hitit University}, year = {2021}, volume = {8}, pages = {1 - 5}, doi = {10.17350/HJSE19030000206}, title = {Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†}, key = {cite}, author = {Acar, Merve and Mobtakeri, Soheil and Ertuğrul, Mehmet and Gür, Emre} }
APA Acar, M , Mobtakeri, S , Ertuğrul, M , Gür, E . (2021). Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)† . Hittite Journal of Science and Engineering , 8 (1) , 1-5 . DOI: 10.17350/HJSE19030000206
MLA Acar, M , Mobtakeri, S , Ertuğrul, M , Gür, E . "Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†" . Hittite Journal of Science and Engineering 8 (2021 ): 1-5 <https://dergipark.org.tr/en/pub/hjse/issue/61101/907421>
Chicago Acar, M , Mobtakeri, S , Ertuğrul, M , Gür, E . "Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†". Hittite Journal of Science and Engineering 8 (2021 ): 1-5
RIS TY - JOUR T1 - Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)† AU - Merve Acar , Soheil Mobtakeri , Mehmet Ertuğrul , Emre Gür Y1 - 2021 PY - 2021 N1 - doi: 10.17350/HJSE19030000206 DO - 10.17350/HJSE19030000206 T2 - Hittite Journal of Science and Engineering JF - Journal JO - JOR SP - 1 EP - 5 VL - 8 IS - 1 SN - -2148-4171 M3 - doi: 10.17350/HJSE19030000206 UR - https://doi.org/10.17350/HJSE19030000206 Y2 - 2020 ER -
EndNote %0 Hittite Journal of Science and Engineering Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)† %A Merve Acar , Soheil Mobtakeri , Mehmet Ertuğrul , Emre Gür %T Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)† %D 2021 %J Hittite Journal of Science and Engineering %P -2148-4171 %V 8 %N 1 %R doi: 10.17350/HJSE19030000206 %U 10.17350/HJSE19030000206
ISNAD Acar, Merve , Mobtakeri, Soheil , Ertuğrul, Mehmet , Gür, Emre . "Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†". Hittite Journal of Science and Engineering 8 / 1 (March 2021): 1-5 . https://doi.org/10.17350/HJSE19030000206
AMA Acar M , Mobtakeri S , Ertuğrul M , Gür E . Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†. Hittite J Sci Eng. 2021; 8(1): 1-5.
Vancouver Acar M , Mobtakeri S , Ertuğrul M , Gür E . Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†. Hittite Journal of Science and Engineering. 2021; 8(1): 1-5.
IEEE M. Acar , S. Mobtakeri , M. Ertuğrul and E. Gür , "Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†", Hittite Journal of Science and Engineering, vol. 8, no. 1, pp. 1-5, Mar. 2021, doi:10.17350/HJSE19030000206