Investigation of SnO2 and Ti-Doped SnO2 Thin Films for Morphological, Structural and Electrical Characterization

Year 2023, Volume: 5 Issue: 1, 1 - 12, 20.01.2023

Ahmet Buğrahan Bayram Tuğba Çorlu

https://doi.org/10.47933/ijeir.1178891

Abstract

In this work, SnO2 and Ti-doped SnO2 thin films were produced by successive ionic absorption and reaction methods on platin interdigital contacts. The thin films produced were not annealed. Structural properties of amorphous thin films were investigated using X-ray Diffraction (XRD), morphological properties using Scanning Electron Microscopy (SEM), optical and electrical properties of Ultraviolet-visible Spectrophotometer (UV-VIS) and Keithley 2400 instruments. From the XRD results, it was determined that the thin films were an amorphous structure. Surface analysis by SEM shows that all films are coated and smooth. The current-voltage measurements show that thin films are ohmic. Lnρ results also show that the lowest resistance value for SnO2 thin films is after 320 °C temperature and after 360 °C temperature for Ti-doped SnO2 thin films.

Keywords

Successive ionic layer adsorption and reaction (SILAR), Tin dioxide (SnO2), Characterization

SnO2 ve Titanyum katkılı SnO2 İnce Filmlerin Morfolojik, Yapısal ve Elektriksel Karakterizasyonun İncelenmesi

Abstract

Bu çalışmada, platin interdigital kontakları üzerinde ardışık iyonik absorpsiyon ve reaksiyon yöntemleri ile SnO2 ve Ti katkılı SnO2 ince filmler üretilmiştir. Üretilen ince filmler tavlanmamıştır. Amorf ince filmlerin yapısal özellikleri, X-Işını Kırınım (XRD) kullanılarak, morfolojik özellikleri, Taramalı Elektron Mikroskobu (SEM) kullanılarak, Ultraviyole-görünür Spektrofotometre (UV-VIS) ve Keithley 2400 cihazlarının optik ve elektriksel özellikleri araştırıldı. XRD sonuçlarından ince filmlerin amorf bir yapı olduğu belirlendi. SEM ile yapılan yüzey analizi, tüm filmlerin kaplanmış ve pürüzsüz olduğunu göstermektedir. Akım-voltaj ölçümleri, ince filmlerin omik olduğunu göstermektedir. Lnρ sonuçları ayrıca, SnO2 ince filmler için en düşük direnç değerinin 320 °C sıcaklıktan sonra ve Ti katkılı SnO2 ince filmler için 360 °C sıcaklıktan sonra olduğunu göstermektedir.

Keywords

Ardışık iyonik tabaka adsorpsiyonu ve reaksiyonu (SILAR), Kalay dioksit (SnO2), Karakterizasyon

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