Analytical Investigation of the Channel Characteristics in Graphene Nano Scroll based Transistors

Year 2024, Volume: 9 Issue: 4, 123 - 127, 10.03.2025

Banafsheh Alizadeh Arashloo

https://doi.org/10.19072/ijet.1618541

Abstract

Silicon-based electronic devices as a three terminal field-effect transistor is predictably reached to its extreme limitation by getting its channel length below the 10nm regime technology and suffering from numerous scaling drawbacks. As a technology progress, replaced of a new material in transistor channel is considered. Therefore, due to excellent properties new material as a Nano Scrolls are purposed. These replacements for the traditional silicon-based FET, plays a significant role to increasing the device speed. However, shrinking of the device dimensions has led to challenges such as leakage current, short channel effects, high power consumption, interconnect difficulties and quantum effects, these Nano-device and Nano-structures are the perfect candidate to overcome the scaling problems. In the present paper investigation of the channel scaling and the charge carrier mobility behavior as one of the most remarkable characteristics for modeling of nanoscale Metal Oxide field-effect transistors is considered. This numerical mobility model of charge carrier is derived analytically for the Graphene Nano Ribbons Field-Effect Transistor, in which the carrier concentration, temperature, channel length and channel’s resistance characteristics are highlighted. According to theses carrier mobility model of GNS-based FET transistor, the carrier’s mobility versus carrier concentration is decreased. By expanding the channel length and rising the temperature the mobility is reduced. Moreover, the channel length increasing caused to growing the channel current. By increasing the channel length, the channel resistance and carrier mobility is declined. The temperature rising decreases the carrier’s mobility and the channel length expanding increases the mobility. Finally, comparison of the model by experimental results, supports the acceptability of model and can maintenance the appropriately of the model outcomes by experimental.

Keywords

Graphene Nano Scroll, Carrier mobility, MOSFET, carrier concentration, channel length, temperature

Grafen Nano Scroll Tabanlı Transistörlerdeki Kanal Karakteristiklerinin Analitik Olarak İncelenmesi

Abstract

Üç terminalli alan etkili bir transistör olarak silikon bazlı elektronik cihazlar, kanal uzunluğunun 10nm rejim teknolojisinin altına alınması ve çok sayıda ölçeklendirme dezavantajından yararlanma nedeniyle tahmin edilebileceği gibi aşırı sınırlamalarına ulaşmaktadır. Teknoloji ilerledikçe transistör kanalında yeni bir malzemenin değiştirilmesi düşünülmektedir. Bu nedenle, mükemmel özellikleri nedeniyle Nano Scroll gibi yeni malzemeler kulanmaktadır. Geleneksel silikon bazlı FET'in yerine geçen bu değişiklikler, cihazın hızının arttırılmasında önemli bir rol oynuyor. Ancak cihaz boyutlarının küçülmesi, kaçak akım, kısa kanal etkileri, yüksek güç tüketimi, ara bağlantı zorlukları ve kuantum etkileri gibi zorluklara yol açmıştır; bu Nano cihaz ve Nano yapılar, ölçeklendirme sorunlarının üstesinden gelmek için mükemmel bir adaydırlar. Bu makalede, nano ölçekli Metal Oksit alan etkili transistörlerin modellenmesinde en dikkat çekici özelliklerden biri olan kanal ölçeklendirme ve yük taşıyıcı hareketlilik davranışının incelenmesi göz altına alınmaktadır. Yük taşıyıcısının bu sayısal hareketlilik modeli, taşıyıcı konsantrasyonunun, sıcaklığın, kanal uzunluğunun ve kanalın direnç özelliklerinin vurgulandığı Grafen Nano Skroll Alan Etkili Transistör için analitik olarak türetilmiştir. GNS tabanlı FET transistörün bu taşıyıcı hareketlilik modeline göre taşıyıcının hareketliliği, taşıyıcı konsantrasyonuna göre azalır. Kanal uzunluğunun genişletilmesi ve sıcaklığın arttırılmasıyla hareketlilik azaltılır. Ayrıca kanal uzunluğunun artması kanal akımının da artmasına neden olmuştur. Kanal uzunluğunun arttırılmasıyla kanal direnci ve taşıyıcı hareketliliği azalır. Sıcaklık artışı taşıyıcının hareketliliğini azaltır ve kanal uzunluğunun genişlemesi hareketliliği artırır. Son olarak, modelin deneysel sonuçlarla karşılaştırılması, modelin kabul edilebilirliğini destekler ve model sonuçlarının deneysel olarak uygun şekilde korunmasını sağlayabilirz.

Keywords

Grafen Nano Kaydırma, Taşıyıcı hareketliliği, MOSFET, taşıyıcı konsantrasyonu, kanal uzunluğu, sıcaklık

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