SiC’ ün Enerji Spektrumu ve Özellikleri: Farklı Harmonikler için İki Foton Emilimi Kullanma

Yıl 2023, , 323 - 332, 31.12.2023

Dilan Alp

https://doi.org/10.29132/ijpas.1327295

Öz

Bu makale, Silikon Karbür (SiC) yarıiletken malzemelerin enerji spektrumunu ve karakteristiklerini incelemek için iki-foton emilimi (TPA) ve çeşitli harmonikler kullanarak bir metodolojiyi açıklar. Bu yaklaşım, TPA sürecine dayalı olarak SiC' ün enerji seviyelerini ve geçişlerini simüle etmek için teorik modellerin geliştirilmesini içermektedir. SiC' ün enerji spektrumu ve özellikleri, harmonik derece değiştirilerek, araştırıldı. Ayrıca bu çalışmada, tek ve iki-foton emilimi için SiC' ün enerji spektrumu ve özelliklerinin karşılaştırması yapılarak, SiC' ün bu koşullar altında farklı özellikleri hakkında bilgi verildi. Özellikle malzemenin absorpsiyon katsayısı, oda sıcaklığında (300 K) 200-900 nm dalga boyu aralığında optik geçirgenlik ve yansıma ölçümlerinden hesaplandı. Ayrıca, SiC malzemelerinde TPA kullanılarak farklı enerjilerde merkezlenmiş Gauss fonksiyonları modellenerek, bunların Harmonik Üretim (HG) sinyaline katkıları hesaplandı.

Anahtar Kelimeler

Doğrusal olmayan optik, iki foton emilimi, tek foton emilimi, harmonik derece, harmonik üretim, SiC.

Energy Spectrum and Properties of SiC: Using Two-Photon Absorption for Different Harmonics

Öz

This paper describes a methodology for studying the energy spectrum and characteristics of Silicon Carbide (SiC) semiconductor materials, utilizing various harmonics for two-photon absorption (TPA). The approach involves developing theoretical models to simulate the energy levels and transitions of SiC, based on the TPA process. By analyzing the resulting spectra obtained by varying the harmonic order, the energy spectrum, and properties of SiC are explored. In this work also includes a comparison of the energy spectrum and properties of SiC for single and two-photon absorption, providing insights into the distinctive features of SiC under these conditions. In particularly absorption co-efficient of the material was calculated from optical transmittance and reflectance measurements at room temperature (300 K) in the wavelength range of 200 -900 nm. In addition, Gaussian functions centered at different energies were modeled using TPA in SiC materials and their contribution to the Harmonic Generation (HG) signal was calculated.

Anahtar Kelimeler

Nonlinear Optic, Two Photon Absorption (TPA), single photon absorption (SPA), harmonic order, harmonic generation (HG), SiC.

Kaynakça

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