Bulk Recombination Lifetime of Minority Carrier in Compensated p-Si Solar Cell

Abstract

A numerical study has been carried out to extract bulk recombinations lifetime of minority carrier in Fe contaminated p-type compensated silicon solar cell. In this paper it has demonstrated that the compensation will lead to a substantial increase in both intrinsic and Shockley-Read-Hall (SRH) lifetime for minority carrier in p-Si. The utmost importance of this result is the control of compensation level that will facilitate strong improvements in silicon solar cell efficiencies.

Keywords

• Compensation, SoG, Recombination lifetime, Solar cell.

References

1. D. Macdonald, “Recombination and Trapping in MulticrystallineSiliocn Solar Cell”, PhD thesis. Australian National University, Australia, 2001.
2. J. Libal et al.., “Effect of Compensation and Metallic Impurities on the Electrical Properties of Cz-grown Solar Grade Silicon,” Journal of Applied Physics 104, 10450 (2008).
3. S. Dubois et al., “Effects of the Compensation Level on the Carrier Lifetime of Crystalline Silicon,” Journal of Applied Physics 93, 032114 (2008).
4. S. Rein, “Lifetime Spectroscopy,” Springer, Berlin, Germany, 2005.
5. Mohammad Ziaur Rahman, Shahidul Islam Khan, “Advances in Surface Passivation of c-Si Solar Cells”, Materials for Renewable and Sustainable Energy, Springer verlag, 1 (2012) 1-11. doi:10.1007/s40243-012- 0001-y.
6. Mohammad Ziaur Rahman, “Advances in surface passivation and emitter optimization techniques of crystalline silicon solar cell”, Renewable and Sustainable Energy 10.1016/j.rser.2013.11.025. (2014) 734-742, doi:
7. M. Rahman, "Status of Selective Emitters for p-Type c-Si Solar Cells," Optics and Photonics Journal, Vol. 2 No. 2, 2012, pp. 129-134. doi: 10.4236/opj.2012.22018.
8. M. J. Kerr, and A. Cuevas, “General Parameterization of Auger Recombination in Crystalline Silicon,” Journal of Applied Physics, vol. 91(4), 2473 (2002).

9. R. Hall, “Electron-hole recombination in germanium”, Physics Review 87, 387 (1952).
10. W. Shockley, and W. Read, “Statistics of the recombinations of holes and electrons”, Physical Rev.87, 835-842 (1952).
11. Mohammad ZiaurRahman, Modeling Minority Carrier Recombination Lifetime in Silicon Solar Cell”, International Journal of Renewable Energy Research, Vol.2 (1), pp. 449- 454, March, 2012.
12. Mohammad ZiaurRahman, Mohammad Jahangir Alam, “SRH Recombination Strength of Fe in Compensated Solar Grade Silicon”, Photonics letters, Poland, VOL. 5(3), 118-120 (2013) , doi: 10.4302/plp.2013.3.13
13. Mohammad Jahangir Alam, Mohammad ZiaurRahman, “Correlation of Fe-rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon”, Applied Mechanics and Materials, 440 (2014) 82-87. doi: 10.4028/www.scientific.net/AMM.440.82