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A Study the Calculation of the Optical Gap Energy and Urbach Energy in the Semiconductor Doping

Year 2015, Volume: 5 Issue: 1, 177 - 182, 01.03.2015

Abstract

We investigated the optical properties of pure and Aluminum doped zinc oxide thin films as the n-type semiconductor. In this paper we have focused our attention on the creation of a new approach to calculate the optical gap and Urbach energies, these correlations based on experimental data were published previously in the literatures. The thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis techniques. The calculation by these proposal models of the band gap and the Urbach energies of undoped and doped ZnO thin films were studied. The relation between the experimental data and theoretical calculation with precursor molarities suggests that the band gap and/or the Urbach energies are predominantly estimated by the band gap and/or the Urbach energies and the concentrations of ZnO solution and Al doping. The measurements by these proposals models are in qualitative agreements with the experimental data that have been reliable in this work, at this point the correlation coefficients value was estimated of 0.99, and thus we have found that the relative errors of all calculation are smaller than 4 % for optical band gap and 20 % for Urbach energy. The best estimated results were obtained for Al doped ZnO thin films; with minimum relative errors values were limited to 3.6 and 8.3 % for the band gap and the Urbach energies, respectively. This is the approach adopted to improve the band gap energy for less disorder of ZnO thin films after doping. Stoichiometric Al doped ZnO films are highly transparency and good optical band gap.

References

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  • F. Benharrats, K. Zitouni, A. Kadri, B. Gil, Determination of polarization fields in CdxZn1–xO/ZnO quantum wells grown along the polar (0001) direction, Superlattices and Microstructures , Vol. 47,pp. 592–596, 2010.
  • M. Saleem, S.A. Siddiqi, S. Atiq, M.S. Anwar, I. Hussain, S. Alam, Carriers -mediated ferromagnetic enhancement in Al-doped ZnMnO dilute magnetic semiconductors, Materials Characterisations , Vol. 62, pp. 1102–1107, 2011.
  • D.W. Kang, S.H. Kuk, K.S. Ji, H.M. Lee, M.K. Han, Effects of ITO precursor thickness on transparent conductive Al doped ZnO film for solar cell applications, Solar Energy Materials & Solar Cells , Vol. 95, pp. 138– 141, 2011.
  • M. Julliena, D. Horwat, F. Manzeh, R. Escobar Galind o , Ph. Bauer, J.F. Pierson, J.L. Endrino, Influence of the nanoscale structural features on the properties and electronic structure of Al-doped ZnO thin films: An X- ray absorption study, Solar Energy Materials & Solar Cells, Vol. 95,pp. 2341–2346, 2011.
  • H. Zhu, J. Hüpkes, E. Bunte, J. Owen, S.M. Huang, Novel etching method on high rate ZnO:Al thin films reactively sputtered from dual tube metallic targets for silicon-based solar cells, Solar Energy Materials & Solar Cells, Vol. 95, pp. 964–968, 2011.
  • S. Rahmane, M.A. Djouadi, M.S. Aida, N. Barreau, B. Abdallah, N. Hadj Zoubir, Power and pressure effects upon magnetron sputtered aluminum doped ZnO films properties, Thin Solid Films , Vol. 519, pp. 5–10, 2010.
  • D. Vernardou, G. Kenanakis, S. Couris, A.C. Manikas, G.A. Voyiatzis, M.E. Pemble, E. Koudoumas, N. Katsarakis, The effect of growth time on the morphology of ZnO structures deposited on Si (1 0 0) by the aqueous chemical growth technique, Journal of Crystal Growth , Vol. 308,pp. 105–109, 2007.
  • Y.D. Ko, K.C. Kim, Y.S. Kim, Effects of substrate temperature on the Ga-doped ZnO films as an anode material of organic light emitting diodes, Superlattices and Microstructures , Vol. 51, pp. 933–941, 2012.
  • E.F. Keskenler, G. Turgut, S. Dogăn, Investigation of structural and optical properties of ZnO films co-doped with Microstructures, Vol. 52, pp. 107–115, 2012. indium, fluorine and Superlattices and
  • C.C. Ting, C.H. Li, C.Y. Kuo, C.C. Hsu, H.C. Wang, M.H. Yang, Compact and vertically aligned ZnO nanorod thin films by the low temperatu re solution method, Thin Solid Films , Vol. 518, pp. 4156–4150, 2010.
  • R.E. Marotti, P. Giorgi, G. Machado, E.A. Dalchiele , Crystallite size dependence of band gap energy for electrodeposited ZnO grown at different temperatures, Solar Energy Materials & Solar Cells, Vol. 90,pp. 2356– 2361, 2006.
  • J. Ramesh, G. Pasupathi, R. Mariappan, V. Senthil Kumar, properties of Ni doped ZnO thin films using sol–gel dip coating technique, Optik, Vol. 124, pp. 2023–2027, 2013.
  • S. Benramache, B. Benhaoua, N. Khechai, F. Chabane, Elaboration and characterisation of ZnO thin films , Matériaux & Techniques , Vol. 100,pp. 573–580, 2012.
  • S. Benramache, B. Benhaoua, Influence of annealing temperature on structural and optical properties of ZnO: In thin films prepared by ultrasonic spray technique, Superlattices and Microstructures, Vol. 52, pp. 1062– 1070, 2012. [18] K. Subbulakshmi, R. Pandeeswari and B.G. Jeyaprakash, Surface morphology dependent TMA sensing response of spray deposited ZnO thin films , Superlattices and Microstructures , Vol. 65, pp. 219–226, 2013.
  • S. Benramache, O. Belahssen, A. Guettaf, A. Arif, Correlation between electrical conductivity–optical band gap energy and precursor molarities ultrasonic spray deposition thin Semiconductors ,Vol.34, pp. 113001–5, 2013. films, Journal of
  • A. Gahtar et al. Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique, Journal of Semiconductors , Vol. 34, pp. 073001–5, 2013.
  • B. Benhaoua et al. The Structural, Optical and Electric a l Properties of Nanocrystalline ZnO:Al Thin Films , Superlattices and Microstructures , Vol. 68, pp. 38–47, 2014.
  • F. Chouikh, Y. Beggah, M. S. Aida, Optical and electrical properties of Bi doped ZnO thin films deposited by ultrasonic spray pyrolysis, Journal of Materials Science: Materials Electronic, Vol. 22, pp. 499–505, 2011.
  • N. Zebbar, Y. Kheireddine, K. Mokeddem, A. Hafdallah , M. Kechouane, M.S. Aida, Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic spray, Materials Science in Semiconductor Processing, Vol. 14, pp. 229–234, 2011.
  • S. Ilican, Y. Caglar, M. Caglar, F. Yakuphanoglu, Electrical conductivity, optical and structural properties of indium-doped ZnO nanofiber thin film deposited by spray pyrolysis method, PhysicaE,Vol. 35, pp. 131–138, 2006.
  • A. Rahal et al. Substrate Temperature Effect on Optical property of ZnO Thin Films, Engineering Journal, Vol. 18, pp.81–88, 2014.
  • B.L. Zhu, X.H. Sun, X.Z. et al.The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition, Vacuum, Vol. 82, pp. 495–500, 2008.
  • S. Benramache, B. Benhaoua, Influence of substrate temperature and Cobalt concentration on structural and optical properties of ZnO thin films prepared by Ultrasonic Microstructures , Vol. 52, pp. 807–815, 2012. Superlattices and
  • A. Hafdallah, F. Yanineb, M.S. Aida, N. Attaf, In doped ZnO thin films, Journal of Alloys and Compounds , Vol. 509, pp. 7267–7270, 2011.
Year 2015, Volume: 5 Issue: 1, 177 - 182, 01.03.2015

Abstract

References

  • S. Ilican, Y. Caglar, M. Caglar, Preparation and characterization of ZnO thin films deposited by sol-gel spin coating method, Journal of Optoelectronics and Advanced Materials, Vol. 10, pp. 2578‒2583, 2008.
  • M. Ohtsu, Progress in Nano-Electro Optics VII, pp. 73– 108. , Tokyo 2002.
  • S. Benramache, A. Arif, O. Belahssen, A. Guettaf,Study on the correlation between crystallite sizeand optical gap energy of doped ZnO thin film, Journal of Nanostructure in Chemistry, Vol.3:80, pp.1–6, 2013.
  • F. Benharrats, K. Zitouni, A. Kadri, B. Gil, Determination of polarization fields in CdxZn1–xO/ZnO quantum wells grown along the polar (0001) direction, Superlattices and Microstructures , Vol. 47,pp. 592–596, 2010.
  • M. Saleem, S.A. Siddiqi, S. Atiq, M.S. Anwar, I. Hussain, S. Alam, Carriers -mediated ferromagnetic enhancement in Al-doped ZnMnO dilute magnetic semiconductors, Materials Characterisations , Vol. 62, pp. 1102–1107, 2011.
  • D.W. Kang, S.H. Kuk, K.S. Ji, H.M. Lee, M.K. Han, Effects of ITO precursor thickness on transparent conductive Al doped ZnO film for solar cell applications, Solar Energy Materials & Solar Cells , Vol. 95, pp. 138– 141, 2011.
  • M. Julliena, D. Horwat, F. Manzeh, R. Escobar Galind o , Ph. Bauer, J.F. Pierson, J.L. Endrino, Influence of the nanoscale structural features on the properties and electronic structure of Al-doped ZnO thin films: An X- ray absorption study, Solar Energy Materials & Solar Cells, Vol. 95,pp. 2341–2346, 2011.
  • H. Zhu, J. Hüpkes, E. Bunte, J. Owen, S.M. Huang, Novel etching method on high rate ZnO:Al thin films reactively sputtered from dual tube metallic targets for silicon-based solar cells, Solar Energy Materials & Solar Cells, Vol. 95, pp. 964–968, 2011.
  • S. Rahmane, M.A. Djouadi, M.S. Aida, N. Barreau, B. Abdallah, N. Hadj Zoubir, Power and pressure effects upon magnetron sputtered aluminum doped ZnO films properties, Thin Solid Films , Vol. 519, pp. 5–10, 2010.
  • D. Vernardou, G. Kenanakis, S. Couris, A.C. Manikas, G.A. Voyiatzis, M.E. Pemble, E. Koudoumas, N. Katsarakis, The effect of growth time on the morphology of ZnO structures deposited on Si (1 0 0) by the aqueous chemical growth technique, Journal of Crystal Growth , Vol. 308,pp. 105–109, 2007.
  • Y.D. Ko, K.C. Kim, Y.S. Kim, Effects of substrate temperature on the Ga-doped ZnO films as an anode material of organic light emitting diodes, Superlattices and Microstructures , Vol. 51, pp. 933–941, 2012.
  • E.F. Keskenler, G. Turgut, S. Dogăn, Investigation of structural and optical properties of ZnO films co-doped with Microstructures, Vol. 52, pp. 107–115, 2012. indium, fluorine and Superlattices and
  • C.C. Ting, C.H. Li, C.Y. Kuo, C.C. Hsu, H.C. Wang, M.H. Yang, Compact and vertically aligned ZnO nanorod thin films by the low temperatu re solution method, Thin Solid Films , Vol. 518, pp. 4156–4150, 2010.
  • R.E. Marotti, P. Giorgi, G. Machado, E.A. Dalchiele , Crystallite size dependence of band gap energy for electrodeposited ZnO grown at different temperatures, Solar Energy Materials & Solar Cells, Vol. 90,pp. 2356– 2361, 2006.
  • J. Ramesh, G. Pasupathi, R. Mariappan, V. Senthil Kumar, properties of Ni doped ZnO thin films using sol–gel dip coating technique, Optik, Vol. 124, pp. 2023–2027, 2013.
  • S. Benramache, B. Benhaoua, N. Khechai, F. Chabane, Elaboration and characterisation of ZnO thin films , Matériaux & Techniques , Vol. 100,pp. 573–580, 2012.
  • S. Benramache, B. Benhaoua, Influence of annealing temperature on structural and optical properties of ZnO: In thin films prepared by ultrasonic spray technique, Superlattices and Microstructures, Vol. 52, pp. 1062– 1070, 2012. [18] K. Subbulakshmi, R. Pandeeswari and B.G. Jeyaprakash, Surface morphology dependent TMA sensing response of spray deposited ZnO thin films , Superlattices and Microstructures , Vol. 65, pp. 219–226, 2013.
  • S. Benramache, O. Belahssen, A. Guettaf, A. Arif, Correlation between electrical conductivity–optical band gap energy and precursor molarities ultrasonic spray deposition thin Semiconductors ,Vol.34, pp. 113001–5, 2013. films, Journal of
  • A. Gahtar et al. Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique, Journal of Semiconductors , Vol. 34, pp. 073001–5, 2013.
  • B. Benhaoua et al. The Structural, Optical and Electric a l Properties of Nanocrystalline ZnO:Al Thin Films , Superlattices and Microstructures , Vol. 68, pp. 38–47, 2014.
  • F. Chouikh, Y. Beggah, M. S. Aida, Optical and electrical properties of Bi doped ZnO thin films deposited by ultrasonic spray pyrolysis, Journal of Materials Science: Materials Electronic, Vol. 22, pp. 499–505, 2011.
  • N. Zebbar, Y. Kheireddine, K. Mokeddem, A. Hafdallah , M. Kechouane, M.S. Aida, Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic spray, Materials Science in Semiconductor Processing, Vol. 14, pp. 229–234, 2011.
  • S. Ilican, Y. Caglar, M. Caglar, F. Yakuphanoglu, Electrical conductivity, optical and structural properties of indium-doped ZnO nanofiber thin film deposited by spray pyrolysis method, PhysicaE,Vol. 35, pp. 131–138, 2006.
  • A. Rahal et al. Substrate Temperature Effect on Optical property of ZnO Thin Films, Engineering Journal, Vol. 18, pp.81–88, 2014.
  • B.L. Zhu, X.H. Sun, X.Z. et al.The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition, Vacuum, Vol. 82, pp. 495–500, 2008.
  • S. Benramache, B. Benhaoua, Influence of substrate temperature and Cobalt concentration on structural and optical properties of ZnO thin films prepared by Ultrasonic Microstructures , Vol. 52, pp. 807–815, 2012. Superlattices and
  • A. Hafdallah, F. Yanineb, M.S. Aida, N. Attaf, In doped ZnO thin films, Journal of Alloys and Compounds , Vol. 509, pp. 7267–7270, 2011.
There are 27 citations in total.

Details

Primary Language English
Journal Section Articles
Authors

Ali Arif This is me

Abderrazak Guettaf This is me

Salim Gareh This is me

Okba Belahssen This is me

Said Benramache This is me

Publication Date March 1, 2015
Published in Issue Year 2015 Volume: 5 Issue: 1

Cite

APA Arif, A., Guettaf, A., Gareh, S., Belahssen, O., et al. (2015). A Study the Calculation of the Optical Gap Energy and Urbach Energy in the Semiconductor Doping. International Journal Of Renewable Energy Research, 5(1), 177-182.
AMA Arif A, Guettaf A, Gareh S, Belahssen O, Benramache S. A Study the Calculation of the Optical Gap Energy and Urbach Energy in the Semiconductor Doping. International Journal Of Renewable Energy Research. March 2015;5(1):177-182.
Chicago Arif, Ali, Abderrazak Guettaf, Salim Gareh, Okba Belahssen, and Said Benramache. “A Study the Calculation of the Optical Gap Energy and Urbach Energy in the Semiconductor Doping”. International Journal Of Renewable Energy Research 5, no. 1 (March 2015): 177-82.
EndNote Arif A, Guettaf A, Gareh S, Belahssen O, Benramache S (March 1, 2015) A Study the Calculation of the Optical Gap Energy and Urbach Energy in the Semiconductor Doping. International Journal Of Renewable Energy Research 5 1 177–182.
IEEE A. Arif, A. Guettaf, S. Gareh, O. Belahssen, and S. Benramache, “A Study the Calculation of the Optical Gap Energy and Urbach Energy in the Semiconductor Doping”, International Journal Of Renewable Energy Research, vol. 5, no. 1, pp. 177–182, 2015.
ISNAD Arif, Ali et al. “A Study the Calculation of the Optical Gap Energy and Urbach Energy in the Semiconductor Doping”. International Journal Of Renewable Energy Research 5/1 (March 2015), 177-182.
JAMA Arif A, Guettaf A, Gareh S, Belahssen O, Benramache S. A Study the Calculation of the Optical Gap Energy and Urbach Energy in the Semiconductor Doping. International Journal Of Renewable Energy Research. 2015;5:177–182.
MLA Arif, Ali et al. “A Study the Calculation of the Optical Gap Energy and Urbach Energy in the Semiconductor Doping”. International Journal Of Renewable Energy Research, vol. 5, no. 1, 2015, pp. 177-82.
Vancouver Arif A, Guettaf A, Gareh S, Belahssen O, Benramache S. A Study the Calculation of the Optical Gap Energy and Urbach Energy in the Semiconductor Doping. International Journal Of Renewable Energy Research. 2015;5(1):177-82.