Year 2013,
Volume: 3 Issue: 4, 980 - 983, 01.12.2013
Abstract
A numerical study has been carried out to extract bulk recombinations lifetime of minority carrier in Fe contaminated p-type compensated silicon solar cell. In this paper it has demonstrated that the compensation will lead to a substantial increase in both intrinsic and Shockley-Read-Hall (SRH) lifetime for minority carrier in p-Si. The utmost importance of this result is the control of compensation level that will facilitate strong improvements in silicon solar cell efficiencies.
Keywords
References
- D. Macdonald, “Recombination and Trapping in MulticrystallineSiliocn Solar Cell”, PhD thesis. Australian National University, Australia, 2001.
- J. Libal et al.., “Effect of Compensation and Metallic Impurities on the Electrical Properties of Cz-grown Solar Grade Silicon,” Journal of Applied Physics 104, 10450 (2008).
- S. Dubois et al., “Effects of the Compensation Level on the Carrier Lifetime of Crystalline Silicon,” Journal of Applied Physics 93, 032114 (2008).
- S. Rein, “Lifetime Spectroscopy,” Springer, Berlin, Germany, 2005.
- Mohammad Ziaur Rahman, Shahidul Islam Khan, “Advances in Surface Passivation of c-Si Solar Cells”, Materials for Renewable and Sustainable Energy, Springer verlag, 1 (2012) 1-11. doi:10.1007/s40243-012- 0001-y.
- Mohammad Ziaur Rahman, “Advances in surface passivation and emitter optimization techniques of crystalline silicon solar cell”, Renewable and Sustainable Energy 10.1016/j.rser.2013.11.025. (2014) 734-742, doi:
- M. Rahman, "Status of Selective Emitters for p-Type c-Si Solar Cells," Optics and Photonics Journal, Vol. 2 No. 2, 2012, pp. 129-134. doi: 10.4236/opj.2012.22018.
- M. J. Kerr, and A. Cuevas, “General Parameterization of Auger Recombination in Crystalline Silicon,” Journal of Applied Physics, vol. 91(4), 2473 (2002).
- R. Hall, “Electron-hole recombination in germanium”, Physics Review 87, 387 (1952).
- W. Shockley, and W. Read, “Statistics of the recombinations of holes and electrons”, Physical Rev.87, 835-842 (1952).
- Mohammad ZiaurRahman, Modeling Minority Carrier Recombination Lifetime in Silicon Solar Cell”, International Journal of Renewable Energy Research, Vol.2 (1), pp. 449- 454, March, 2012.
- Mohammad ZiaurRahman, Mohammad Jahangir Alam, “SRH Recombination Strength of Fe in Compensated Solar Grade Silicon”, Photonics letters, Poland, VOL. 5(3), 118-120 (2013) , doi: 10.4302/plp.2013.3.13
- Mohammad Jahangir Alam, Mohammad ZiaurRahman, “Correlation of Fe-rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon”, Applied Mechanics and Materials, 440 (2014) 82-87. doi: 10.4028/www.scientific.net/AMM.440.82
Year 2013,
Volume: 3 Issue: 4, 980 - 983, 01.12.2013
Abstract
References
- D. Macdonald, “Recombination and Trapping in MulticrystallineSiliocn Solar Cell”, PhD thesis. Australian National University, Australia, 2001.
- J. Libal et al.., “Effect of Compensation and Metallic Impurities on the Electrical Properties of Cz-grown Solar Grade Silicon,” Journal of Applied Physics 104, 10450 (2008).
- S. Dubois et al., “Effects of the Compensation Level on the Carrier Lifetime of Crystalline Silicon,” Journal of Applied Physics 93, 032114 (2008).
- S. Rein, “Lifetime Spectroscopy,” Springer, Berlin, Germany, 2005.
- Mohammad Ziaur Rahman, Shahidul Islam Khan, “Advances in Surface Passivation of c-Si Solar Cells”, Materials for Renewable and Sustainable Energy, Springer verlag, 1 (2012) 1-11. doi:10.1007/s40243-012- 0001-y.
- Mohammad Ziaur Rahman, “Advances in surface passivation and emitter optimization techniques of crystalline silicon solar cell”, Renewable and Sustainable Energy 10.1016/j.rser.2013.11.025. (2014) 734-742, doi:
- M. Rahman, "Status of Selective Emitters for p-Type c-Si Solar Cells," Optics and Photonics Journal, Vol. 2 No. 2, 2012, pp. 129-134. doi: 10.4236/opj.2012.22018.
- M. J. Kerr, and A. Cuevas, “General Parameterization of Auger Recombination in Crystalline Silicon,” Journal of Applied Physics, vol. 91(4), 2473 (2002).
- R. Hall, “Electron-hole recombination in germanium”, Physics Review 87, 387 (1952).
- W. Shockley, and W. Read, “Statistics of the recombinations of holes and electrons”, Physical Rev.87, 835-842 (1952).
- Mohammad ZiaurRahman, Modeling Minority Carrier Recombination Lifetime in Silicon Solar Cell”, International Journal of Renewable Energy Research, Vol.2 (1), pp. 449- 454, March, 2012.
- Mohammad ZiaurRahman, Mohammad Jahangir Alam, “SRH Recombination Strength of Fe in Compensated Solar Grade Silicon”, Photonics letters, Poland, VOL. 5(3), 118-120 (2013) , doi: 10.4302/plp.2013.3.13
- Mohammad Jahangir Alam, Mohammad ZiaurRahman, “Correlation of Fe-rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon”, Applied Mechanics and Materials, 440 (2014) 82-87. doi: 10.4028/www.scientific.net/AMM.440.82
There are 13 citations in total.
Details
| Primary Language | English |
|---|---|
| Journal Section | Articles |
| Authors | |
| Publication Date | December 1, 2013 |
| Published in Issue | Year 2013 Volume: 3 Issue: 4 |