YOĞUNLAŞMIŞ ISINMALI VE ELMAS ALTTAŞLI GAN HEMT’LERİN ISI DAĞITMA PERFORMANSI

Year 2019, Volume: 39 Issue: 2, 111 - 119, 31.10.2019

Mohammad Azarıfar Doğacan Kara Nazlı Dönmezer

Abstract

Elmas yüksek güç ve frekans AlGaN/GaN yüksek elektron mobiliteli transistörler (HEMTs) için son zamanlarda tercih edilen alttaş malzemesidir. Yüksek ısıl iletkenliği ile elmas aygıt güvenirliği için gerekli olan elektron kanalındaki yoğunlaşmış ısının dışarı taşınmasında iyileştirmeler sunar. Önceki SiC ve elmas alttaşlara sahip GaN aygıtların ısıl karşılaştırma çalışmaları deneysel ve modelleme konusundaki sınırlamalar nedeniyle büyük ve tep tip ısı kaynağına sahip aygıtlarla sınırlandırılmıştır. Bu çalışmada sunulan analitik çalışma ile bu sınırlamaların üstesinden gelerek SiC ve elmas alttaşlı ve yoğunlaşmış ısınmalı GaN aygıtların ısıl karşılaştırmalarını daha detaylı bir şekilde gerçekleştrimeye olanak sağlar. Isı dağılımına etki eden katmanlar arası ısıl dirençlerin, GaN katman kalınlıklarının ve çok sayıda parmağa sahip aygıtlardaki parmak sayılarının etkileri bu çalışmada incelenmiştir.

Keywords

HEMTler, alttaş etkileri, elmas, Joule ısınma

THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING

Abstract

Diamond is the new substrate of choice for high power/frequency AlGaN/GaN high electron mobility transistors (HEMTs). Due to its high thermal conductivity, diamond presents improvements in removing concentrated heat from the electron channel, a necessity for reliable performance of these devices. Previous thermal performance comparison studies of GaN-on-SiC and GaN-on-diamond devices are limited to devices with often large and identical heat source regions due to modeling and experimental limitations. Analytical procedure presented in this study overcome these limitations and provide a more comprehensive thermal spreading performance analysis of GaN-on-SiC and GaN-on-diamond HEMTs with localized Joule heating. Important thermal spreading factors such as thermal boundary resistance, GaN buffer layer thickness, and multifinger arrangements are also investigated in this study.

Keywords

HEMTs, substrate effects, diamond, Joule heating

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