Year 2006,
Volume: 6 Issue: 2, 251 - 255, 02.01.2012
Abstract
References
- J. M. Olson, T. A. Gessert, and M. M. Al- Jasim, Proceedings 18th IEEE Photovoltaic Specialists Conference, 552, Las Vegas, Oct. 21– , 1985 ~IEEE, New York, 1985.
- K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, Appl. Phys. Lett. 65, 989, 1994.
- M. Yamaguchi, “Free electron concentration and mobility of InN and In0.68Ga0.32N as a function of displacement damage dose measured by the Hall Effect,” FIG. 6. Sol. Energy Mater. Sol. Cells 75, 261 2003.
- C. H. Henry, “Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells,” Journal of applied physics, 51(8) 4494- , August 1980.
- Hasna Hamzaoui, Ahmed S. Bouazzi, Bahri Rezig, “Theoretical possibilities of InxGa1-xN tandem PV structures,” Solar Energy Materials & Solar Cells, vol. 87 pp. 595-603 Dec. 2005.
- F.Bechstedt, J. Furthmueller, M. Ferhat, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, V.Yu. Davydov, O. Ambacher, R. Goldhahn, “Energy gap and optical properties of InxGa1-XN,” Phys. Status. Solid. (a) 195 (3) 628-633, 2003.
- S. M. Sze, Physics of Semiconductor Device, Bell Laboratories, Incorporated Murray Hill, New Jersey, 1981.
- X. Guo, E.F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90 (8) 4191-4195,
- R. Hickman, J.M. Van Hove, P.P. Chow, J.J. Klaassen, A.M. Wowchack, C.J. Polley, D.J. King, F. Ren, C.R. Abernathy, S.J. Pearton, K.B. Jung, H. Cho, J.R. La Roche, “GaN PN junction issues and developments, ”Http://www.mse.ulf.edu/~spear/recent_papers/p n_junction/pn_junction.pdf, 01/04/2003
- M. Hori, K.Kano, T. Yamaguchi, Y. Satto, T. Araki, Y. Nanishi, N. Teraguchi, and A. Suzuki, “Optical Properties of InxGa1-xN with entire alloy composition on InN buffer layer grown by RF-MBE,” Phys. stat. sol. (b) 234, No. , 750-754, October, 2002.
- M. E. Levinshtein et. al. Properties of advanced semiconductor materials, A wiley- interscience Publication, John wiley & sons, Inc, http://rredc.nrel.gov/solar/spectra/am1.5/ on /05/06 O. Ambacher et. al. “Pyroelectric properties of Al (In) GaN/GaN hetero and quantum well structure” J. Phys. Condens Matter 14, 3399- , 2002.
- M. Yamaguichi et al., “Japanese activities of R&Don III-V concentrator solar cells and modules”, proc. 19th EU-PVSEC, 2004
Year 2006,
Volume: 6 Issue: 2, 251 - 255, 02.01.2012
Abstract
PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS
References
- J. M. Olson, T. A. Gessert, and M. M. Al- Jasim, Proceedings 18th IEEE Photovoltaic Specialists Conference, 552, Las Vegas, Oct. 21– , 1985 ~IEEE, New York, 1985.
- K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, Appl. Phys. Lett. 65, 989, 1994.
- M. Yamaguchi, “Free electron concentration and mobility of InN and In0.68Ga0.32N as a function of displacement damage dose measured by the Hall Effect,” FIG. 6. Sol. Energy Mater. Sol. Cells 75, 261 2003.
- C. H. Henry, “Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells,” Journal of applied physics, 51(8) 4494- , August 1980.
- Hasna Hamzaoui, Ahmed S. Bouazzi, Bahri Rezig, “Theoretical possibilities of InxGa1-xN tandem PV structures,” Solar Energy Materials & Solar Cells, vol. 87 pp. 595-603 Dec. 2005.
- F.Bechstedt, J. Furthmueller, M. Ferhat, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, V.Yu. Davydov, O. Ambacher, R. Goldhahn, “Energy gap and optical properties of InxGa1-XN,” Phys. Status. Solid. (a) 195 (3) 628-633, 2003.
- S. M. Sze, Physics of Semiconductor Device, Bell Laboratories, Incorporated Murray Hill, New Jersey, 1981.
- X. Guo, E.F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90 (8) 4191-4195,
- R. Hickman, J.M. Van Hove, P.P. Chow, J.J. Klaassen, A.M. Wowchack, C.J. Polley, D.J. King, F. Ren, C.R. Abernathy, S.J. Pearton, K.B. Jung, H. Cho, J.R. La Roche, “GaN PN junction issues and developments, ”Http://www.mse.ulf.edu/~spear/recent_papers/p n_junction/pn_junction.pdf, 01/04/2003
- M. Hori, K.Kano, T. Yamaguchi, Y. Satto, T. Araki, Y. Nanishi, N. Teraguchi, and A. Suzuki, “Optical Properties of InxGa1-xN with entire alloy composition on InN buffer layer grown by RF-MBE,” Phys. stat. sol. (b) 234, No. , 750-754, October, 2002.
- M. E. Levinshtein et. al. Properties of advanced semiconductor materials, A wiley- interscience Publication, John wiley & sons, Inc, http://rredc.nrel.gov/solar/spectra/am1.5/ on /05/06 O. Ambacher et. al. “Pyroelectric properties of Al (In) GaN/GaN hetero and quantum well structure” J. Phys. Condens Matter 14, 3399- , 2002.
- M. Yamaguichi et al., “Japanese activities of R&Don III-V concentrator solar cells and modules”, proc. 19th EU-PVSEC, 2004
There are 12 citations in total.
Details
| Primary Language | English |
|---|---|
| Authors | |
| Publication Date | January 2, 2012 |
| Published in Issue | Year 2006 Volume: 6 Issue: 2 |