Theoretical Structural Characterization of XIn2Se4 Ternary Semiconductors Wanted to be Grow Using the Bridgman/Stockbarger Technique

Year 2024, , 36 - 43, 27.06.2024

Bekir Gürbulak

https://doi.org/10.5281/zenodo.12193900

Abstract

The importance of semiconductors paving the way for nano and optoelectronic technology has recently been increasing. But, producing them easily and having their vast application fields are most important. For that reason, the crystals have a wide application field and their characteristics which are determined are needed. Some researchers (Irie et al., 1979; Shih et al., 1986) have suggested that the crystals grown should be grown in a single ampoule and a single stage, considering the idea that it would cause selenium loss. Considering this situation, it was decided to grow XIn2Se4 crystal with this method. XIn2Se4 (X=Cu, Mn, Al, Fe) single crystals used in this research were grown using the Bridgman/Stockbarger method. All of the samples were freshly and gently cleaved with a razor blade from the grown ingots and no further polishing and cleaning treatments were required because of the natural mirror-like cleavage faces. The Samples were cleaved along the cleavage planes (001). In this study, single crystal growth was done in a single step. The structure of XIn2Se4 semiconductors was analysed theoretically using x-ray diffractometer (XRD), scanning electron microscopy (SEM), energy dispersive x-ray (EDX) and Raman spectroscopy techniques.

Keywords

Grown XIn2Se4, Bridgman/Stockbarger Technique, Theoretical Structural Characterization

Supporting Institution

Atatürk Üniversitesi

Project Number

Proje ID: 10176

Bridgman/Stockbarger Tekniği Kullanılarak Büyütülen XIn2Se4 Üçlü Yarıiletkenlerin Teorik Yapısal Karakterizasyonu

Abstract

Nano ve optoelektronik teknolojisinin gelişmesinde yarı iletkenlerin önemi son yıllarda giderek artmaktadır. Yarıiletkenlerin kolay büyütülmesi ve geniş uygulama alanlarına sahip olması önemlidir. Kristallerin geniş bir uygulama alanına sahip olması nedeniyle, birçok özelliklerinin belirlenmesi gerekmektedir. Bazı araştırmacılar (Irie et al., 1979; Shih et al., 1986) selenyum kaybına yol açacağı düşüncesiyle büyütülen kristallerin tek ampulde ve tek aşamada büyütülmesi gerektiğini öne sürmüşlerdir. Bu durum göz önünde bulundurularak XIn2Se4 kristalinin bu yöntemle büyütülmesine karar verilmiştir. Bu çalışmada tek kristal büyütme tek adımda yapılmıştır. Bu araştırmada XIn2Se4 (X=Cu, Mn, Al, Fe) tek kristalleri Bridgman/Stockbarger yöntemi kullanılarak büyütülmüştür. Numunelerin tümü, büyütülen külçelerden (001) düzlemleri boyunca ayrılmıştır. Büyütülen numunelerin yüzey alanları parlak ve pürüzsüz olduğundan parlatma ve temizleme işlemlerine gerek duyulmamıştır. XIn2Se4 yarı iletkenlerinin yapısı, x-ışını difraktometresi (XRD), taramalı elektron mikroskobu (SEM), enerji dağılımlı x-ışını (EDX) ve Raman spektroskopisi teknikleri kullanılarak teorik olarak analiz edilmiştir.

Keywords

XIn2Se4 Büyütme, Bridgman/Stockbarger Tekniği, Teorik Yapısal Karakterizasyon

Project Number

Proje ID: 10176

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