Investigation of Photo-Electrial Properties in (Fe2O3-G)/n-Si Device

Year 2024, , 62 - 74, 12.12.2024

Elif Daş , Gamze Bozkurt

https://doi.org/10.5281/zenodo.14344182

Abstract

This study focuses on the synthesis of iron oxide-graphene (-Fe2O3-G) composite materials and the evaluation of their performance in devices constructed on n-type silicon (n-Si) semiconductors, under both dark and illuminated conditions. Key electrical parameters such as the ideality factor (n = 2.59), barrier height (Φb = 0.74 eV), and series resistance (Rs = 70 kΩ) were determined using Thermionic Emission (TE) and Norde methods from I-V measurements taken in the dark. The device's photoelectrical properties were further examined under illumination, revealing that the Fe2O3-G/n-Si device exhibits self-powered behavior, operating without an external power source. The device achieved a maximum ON/OFF ratio of 32496 and a spesific detectivity (D*) of 26.6 Jones at 0V, along with a maximum responsivity (R) of 98 mAW-1 at -2V. These results highlight the device's potential for efficient photodetection, particularly in self-powered applications.

Keywords

I-V characteristic, Norde method, Photosensitive device, Micro-emulsion method

(Fe2O3-G)/n-Si Cihazında Foto-Elektriksel Özelliklerin Araştırılması

Abstract

Bu çalışma, demir oksit-grafen (-Fe2O3-G) kompozit malzemelerin sentezine ve bunların n-tipi silisyum (n-Si) yarıiletkeni ile oluşturulan cihazlardaki performanslarının hem karanlık hem de aydınlık koşullardaki değerlendirilmesine odaklanmaktadır. İdealite faktörü (n= 2,59) bariyer yüksekliği (Φb = 0,74 eV) ve seri direnç (Rs = 70 kΩ) gibi elektriksel parametreler karanlıkta alınan I-V ölçümlerinden Termiyonik Emisyon (TE) ve Norde yöntemleri kullanılarak belirlenmiştir. Cihazın fotoelektrik özellikleri aydınlatma altında da incelenmiş ve Fe2O3-G/n-Si cihazının harici bir güç kaynağı olmadan çalışarak kendi kendine güç sağlama davranışı sergilediği ortaya çıkmıştır. Aygıt, 0 voltta maksimum ON/OFF oranına (32496) ve spesifik dedektiviteye (D*, 26,6 Jones), -2 voltta da maximum duyarlılığa (R, 98 mAW-1) ulaşmıştır. Bu sonuçlar, cihazın özellikle kendi kendine güç sağlayan uygulamalarda verimli ışık algılama potansiyeline sahip olduğunu vurgulamaktadır.

Keywords

I-V karakteristiği, Norde metodu, Işığa duyarlı cihaz, Mikro-emülsiyon yöntemi

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