Theoretical Structural Characterization of XIn2Se4 Ternary Semiconductors Wanted to be Grow Using the Bridgman/Stockbarger Technique

Year 2024, Volume: 3 Issue: 1, 36 - 43, 27.06.2024

Bekir Gürbulak

https://doi.org/10.5281/zenodo.12193900

Abstract

The importance of semiconductors paving the way for nano and optoelectronic technology has recently been increasing. But, producing them easily and having their vast application fields are most important. For that reason, the crystals have a wide application field and their characteristics which are determined are needed. Some researchers (Irie et al., 1979; Shih et al., 1986) have suggested that the crystals grown should be grown in a single ampoule and a single stage, considering the idea that it would cause selenium loss. Considering this situation, it was decided to grow XIn2Se4 crystal with this method. XIn2Se4 (X=Cu, Mn, Al, Fe) single crystals used in this research were grown using the Bridgman/Stockbarger method. All of the samples were freshly and gently cleaved with a razor blade from the grown ingots and no further polishing and cleaning treatments were required because of the natural mirror-like cleavage faces. The Samples were cleaved along the cleavage planes (001). In this study, single crystal growth was done in a single step. The structure of XIn2Se4 semiconductors was analysed theoretically using x-ray diffractometer (XRD), scanning electron microscopy (SEM), energy dispersive x-ray (EDX) and Raman spectroscopy techniques.

Keywords

Grown XIn2Se4, Bridgman/Stockbarger Technique, Theoretical Structural Characterization

Supporting Institution

Atatürk Üniversitesi

Project Number

Proje ID: 10176

Bridgman/Stockbarger Tekniği Kullanılarak Büyütülen XIn2Se4 Üçlü Yarıiletkenlerin Teorik Yapısal Karakterizasyonu

Abstract

Nano ve optoelektronik teknolojisinin gelişmesinde yarı iletkenlerin önemi son yıllarda giderek artmaktadır. Yarıiletkenlerin kolay büyütülmesi ve geniş uygulama alanlarına sahip olması önemlidir. Kristallerin geniş bir uygulama alanına sahip olması nedeniyle, birçok özelliklerinin belirlenmesi gerekmektedir. Bazı araştırmacılar (Irie et al., 1979; Shih et al., 1986) selenyum kaybına yol açacağı düşüncesiyle büyütülen kristallerin tek ampulde ve tek aşamada büyütülmesi gerektiğini öne sürmüşlerdir. Bu durum göz önünde bulundurularak XIn2Se4 kristalinin bu yöntemle büyütülmesine karar verilmiştir. Bu çalışmada tek kristal büyütme tek adımda yapılmıştır. Bu araştırmada XIn2Se4 (X=Cu, Mn, Al, Fe) tek kristalleri Bridgman/Stockbarger yöntemi kullanılarak büyütülmüştür. Numunelerin tümü, büyütülen külçelerden (001) düzlemleri boyunca ayrılmıştır. Büyütülen numunelerin yüzey alanları parlak ve pürüzsüz olduğundan parlatma ve temizleme işlemlerine gerek duyulmamıştır. XIn2Se4 yarı iletkenlerinin yapısı, x-ışını difraktometresi (XRD), taramalı elektron mikroskobu (SEM), enerji dağılımlı x-ışını (EDX) ve Raman spektroskopisi teknikleri kullanılarak teorik olarak analiz edilmiştir.

Keywords

XIn2Se4 Büyütme, Bridgman/Stockbarger Tekniği, Teorik Yapısal Karakterizasyon

Project Number

Proje ID: 10176

References

• Bodnar, I. V., Viktorov, I. A., & Pavlyukovets, S. A. (2010). Growth, structure, and thermal expansion anisotropy of FeIn2Se4 single crystals. Inorganic Materials, 46, 604-608.
• Döll, G., Anghel, A., Baumann, J. R., Bucher, E., Ramirez, A. P., & Range, K. J. (1991). Structural and magnetic properties of the ternary manganese compound semiconductors MnAl2Te4, MnIn2Te4, and MnIn2Se4. Physica Status Solidi (A), 126(1), 237-244.
• Döll, G., Lux-Steiner, M. C., Kloc, C., Baumann, J. R., & Bucher, E. (1990). Chemical vapour transport and structural characterization of layered MnIn2Se4 single crystals. Journal of crystal growth, 104(3), 593-600.
• Dotzel, P., & Schafer, H. (1976). Schon “Combined infrared and ramman study of the optical phonons of defect chalcopyrite single crystals”. Z. Anorg. Allg. Chem, 426, 260.
• Gürbulak, B. (1997). İkili (InSe: Er, GaSe, GaSe: Gd) ve Üçlü (TlGaSe2, TlGaSe2: Gd) Tek Kristallerinin Büyütülmesi Soğurma ve Elektriksel Özelliklerinin İncelenmesi. Atatürk Üniversitesi Fen Bilimleri Enstitüsü, Doktora Tezi, Erzurum.
• Gürbulak, B., Ateş, A., Doğan, S., Coşkun, C., Yıldırım, M. & Yoğurtçu, Y. K. (1999). Bulletin of Pure and Applied Sciences. 18(1), 33-40.
• Gürbulak, B., Duman, K. A., & Dumanlı, M. K. (2021). Brıdgman/Stockbarger Tekniğiyle Büyütülen XIIIn2Se4 Üçlü Yarıiletkenlerin Yapısal Karakterizasyonu. Journal of Anatolian Physics and Astronomy, 1(2), 77-85.
• Irie, T., Endo, S., & Kimura, S. (1979). Electrical properties of p-and n-type CuInSe2 single crystals. Japanese Journal of Applied Physics, 18(7), 1303.
• Jackson, P., Hariskos, D., Wuerz, R., Kiowski, O., Bauer, A., Friedlmeier, T. M., & Powalla, M. (2015). Properties of Cu (In, Ga) Se2 solar cells with new record efficiencies up to 21.7%. physica status solidi (RRL)–Rapid Research Letters, 9(1), 28-31.
• Khan, A., Diaz, J., Sagredo, V., & Vargas, R. (1997). Chemical vapor transport and optical, magnetic and structural characterization of platelete-type MnxHo1− xInSe4 single crystals. Journal of crystal growth, 174(1-4), 783-789.
• Krauss, G., Krämer, V., Eifler, A., Riede, V., & Wenger, S. (1997). Growth and characterization of CdAl2S4 and CdAl2Se4 single crystals. Crystal Research and Technology, 32(2), 223-227.
• Odin, I. N., Chukichev, M. V., Vasiliev, A. V., Gapanovich, M. V., & Novikov, G. F. (2019). Crystallographic, magnetic and luminescence characteristics of CuIn2Se4 with a cadmium thioaluminate structure and Cu (In1− xGax) 2Se4 solid solutions (0< x≤ 0.3). Mendeleev Communications, 29(3), 276-278.
• Quintero, M., Morocoima, M., Rivero, A., Bocaranda, P., & Woolley, J. C. (1997). Cu2 (1− z) Mnzln2Se4 alloys; phase diagram and effects of Mn ordering on magnetic behaviour. Journal of Physics and Chemistry of Solids, 58(3), 491-496.
• Ramirez, A. P. (1994). Strongly geometrically frustrated magnets. Annual Review of Materials Science, 24(1), 453-480.
• Rincón, C., Torrres, T. E., Sagredo, V., Jiménez-Sandoval, S. J., & Mares-Jacinto, E. (2015). The fundamental absorption edge in MnIn2Se4 layer semi-magnetic semiconductor. Physica B: Condensed Matter, 477, 123-128.
• Shih, I., Champness, C. H., & Shahidi, A. V. (1986). Growth by directional freezing of CuInSe2 and diffused homojunctions in bulk material. Solar cells, 16, 27-41.
• Trah, H. P., & Krämer, V. (1985). Crystal structure of zinc indium selenide, ZnIn2Se4. Zeitschrift für Kristallographie, 173(3-4), 199-203.
• Twardowski, A., Swagten, H. J. M., De Jonge, W. J. M., & Demianiuk, M. (1987). Magnetic behavior of the diluted magnetic semiconductor Zn 1− x Mn x Se. Physical Review B, 36(13), 7013.
• Woolley, J. C., Bass, S., Lamarche, A. M., & Lamarche, G. (1994). Magnetic susceptibility and exchange interaction parameters for some Mn. III2. VI4 compounds. Journal of magnetism and magnetic materials, 131(1-2), 199-209.