Büyütülen InSe:Mn Yarıiletkenlerin Yapısal Karakterizasyonu ve Katkılınan Manganezin Etkisi

Year 2024, Volume: 3 Issue: 2, 44 - 51, 12.12.2024

Bekir Gürbulak , Mehmet Kürşat Dumanli

https://doi.org/10.5281/zenodo.14343868

Abstract

İkili yarıiletkenler üzerine yapılan bilimsel çalışmalar yarım asırdır devam etmektedir. Yarıiletkenlerin, büyütülmesi ve araştırılması yarıiletken teknolojisinin ilerlemesine büyük katkı sağlamıştır. İndiyum ve selenyum elementlerden stokiyometrik oranlarda sentezlenmiş ve manganez katkılanmıştır. InSe ve InSe:Mn tek kristalleri, Bridgman/Stockbarger kristal büyütme yöntemiyle başarıyla büyütülmüştür. Büyütülen numunelerin yüzeyleri kontaminasyon içermediğinden kimyasal işleme tabi tutulmayarak kimyasal kirlenmeye sebep olunmamıştır. Büyütülen yarıiletkenler tabakalı bir yapıya sahip olduğundan, numuneler kolayca (001) düzlemleri boyunca karakteristik analizler için hazırlanmıştır. InSe ve InSe:Mn yarı iletkenlerinin yapısı X-ışını difraktometresi, taramalı elektron mikroskobu ve enerji dağılımlı x-ışını teknikleri kullanılarak analiz edilmiştir.

Keywords

Kristal Büyütme, InSe, InSe:Mn, Bridgman/Stockbarger Yöntemi

Ethical Statement

ETİK BEYANA İHTİYAÇ OLMAMIŞTIR

Supporting Institution

Atatürk Üniversitesi BAP (Bilimsel Araştırma Projeleri) tarafından desteklenmiştir.

Project Number

FYL-2023-10176, Proje ID: 10176

Structural Characterisation of Grown InSe:Mn Semiconductors and Effect of Doped Manganese

Abstract

Scientific studies on binary semiconductors have been going on for half a century. The growth and research of semiconductors have contributed greatly to the advancement of semiconductor technology. Indium and selenium were synthesised from elements in stoichiometric ratios and doped with manganese. InSe and InSe:Mn single crystals were successfully grown by Bridgman/Stockbarger crystal growth method. Since the surfaces of the grown samples do not contain contamination, chemical contamination was not caused by chemical treatment. Since the grown semiconductors have a layered structure, the samples were easily prepared for characteristic analyses along the (001) planes. The structure of the InSe and InSe:Mn semiconductors was analysed using x-ray diffractometer, scanning electron microscopy and energy dispersive X-ray techniques. An important study has been conducted on the structural properties of InSe and InSe:Mn semiconductors grown with the modified Bridgman/Stockbarger technique. The hexagonal structure of the InSe semiconductor with lattice parameters a = b = 4,025 Å and c = 16,732 Å was confirmed with the help of X-ray diffraction. III-VI semiconductors are used in visible and infrared light emitting diodes, infrared detectors, converters, amplifiers, optical parameter oscillators and far infrared generators.

Keywords

Crystal Growth, InSe, InSe:Mn, Bridgman/Stockbarger Method

Project Number

FYL-2023-10176, Proje ID: 10176

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