Investigation of The Effect of Electron Irradiation on Al-Omic/Graphene (F3O4) Device

Year 2023, Volume: 2 Issue: 1, 1 - 7, 28.03.2023

Yılmaz Şahin

Abstract

This study reports the electrical properties of Al-omic/Graphene (F3O4) devices due to electron radiation. The sample was exposed to 9, 12 and 15 MeV electron irradiations. The sample was exposed to the same radiation dose at different energies. It was observed that the experimental ideality factor also increased with increasing energy levels. It was observed that the I-V curves were distorted. Here, the distortion of the I-V curves is attributed to the change in the device's surface or interface state distribution. Some basic diode parameters such as ideality factor (n), barrier height (Fb) and series resistance (Rs) were calculated from I-V measurements using of Thermionic Emission and Cheung function. The increase in series resistance by electron radiation irradiation was attributed to the decrease in active doping densities.

Keywords

Electron, İrradiation, Effect, Diode

References

• References 1. Sze, M., 1969. Physics of Semiconductor Devices. John Wiley and Sons, New York. Tataroğlu, A., Altındal, Ş., 2007. The effects of frequency and γ-irradiation on the dielectric properties of MIS-type Schottky diodes. Nuclear Instruments and Methods in Physics Research B, 254, 113-117.
• 2. Cheung, S. K., ve Cheung, N. W., 1986. Exraction of Schottky Diode Parameters From I-V Characteristics. Appl. Phys. Lett, 49, 85-87.
• 3. Sharma, B. L. ve Gupta, S. C., 1980. Metal-semiconductor Schottky barrier junctions-1: Fabrication. Solid State Technol., 23 (5), 97.
• 4. Sharma, B. L. ve Gupta, S. C., 1980. Metal-semiconductor Schottky barrier junctions- 2: Fabrication. Solid State Technol., 23 (6), 90..A. Kraft, A.G. Grimsdale, A.B. Holmes, Angew. Chem., Int. Ed. 37 (1998) 402.
• 5. R.T. Tung, Electron transport at metal-semiconductor interfaces: general theory, Phys. Rev. B, 45 (1992), p. 13509
• 6. Çaldıran, Z., Deniz , A.R.; Şahin,Y.; Şınoforoğlu,M.; Metin,Ö.; Meral, K.; Aydoğan,Ş. The Synthesis of the Fe3O4 Nanoparticles and the Analysis of the Current–Voltage Measurements on Au/Fe3O4/p-Si Schottky Contacts in a Wide Temperature Range, Metallurgıcal and Materıals Transactıons A.
• 7. Aydoğan, Ş., Şerifoğlu, K., & Türüt, A. (2011). The effect of electron irradiation on the electrical characteristics of the Aniline Blue/n-Si/Al device. Solid State Sciences, 13(7), 1369–1374. https://doi.org/10.1016/j.solidstatesciences.2011.03.02
• 8. Vieira, D. H., da Silva Ozório, M., Nogueira, G. L., Fugikawa-Santos, L., & Alves, N. (2021). UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodes. Materials Science in Semiconductor Processing, 121, 105339. https://doi.org/10.1016/j.mssp.2020.105339
• 9. Wang, D., Hu, R., Chen, G., Tang, C., Ma, Y., Gong, M., Yu, Q., Cao, S., Li, Y., Huang, M., & Yang, Z. (2021). Heavy ion radiation and temperature effects on SiC schottky barrier diode. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 491, 52–58. https://doi.org/10.1016/J.NIMB.2021.01.019