Characterization of SiO2 Thin Films Deposited by LPCVD

Fatma Betül Akgül Taner

doi:10.58692/jotcsb.1607616

Characterization of SiO2 Thin Films Deposited by LPCVD

Abstract

In this study, SiO2 film grown at different pressures using TEOS (tetraethyl orthosilicate) and O2 gas was characterized by LPCVD (Low Pressure Chemical Vapor Deposition) method. The effect of high temperature annealing processes on the SiO2 film structure was investigated. SiO2 growth rate, etch rate, refractive index, stress, curvature values, film densities, and film structures were investigated with different analysis methods. In addition, impurities arising from the by-products of the reaction of TEOS and O2 were detected in the SiO2 film. AFM and RAMAN were used for the contamination detection analysis.

Keywords

References

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Details

Primary Language

English

Subjects

Materials Science and Technologies

Journal Section

Research Article

Authors

Fatma Betül Akgül Taner ^*
0000-0002-7403-2991
Türkiye

Publication Date

September 15, 2025

Submission Date

December 31, 2024

Acceptance Date

August 19, 2025

Published in Issue

Year 2025 Volume: 8 Number: 2

DOI

https://doi.org/10.58692/jotcsb.1607616

IZ

https://izlik.org/JA55BH56KC

Cite

RIS / Bibtex

APA

Akgül Taner, F. B. (2025). Characterization of SiO2 Thin Films Deposited by LPCVD. Journal of the Turkish Chemical Society Section B: Chemical Engineering, 8(2), 213-222. https://doi.org/10.58692/jotcsb.1607616

AMA

1.Akgül Taner FB. Characterization of SiO2 Thin Films Deposited by LPCVD. JOTCSB. 2025;8(2):213-222. doi:10.58692/jotcsb.1607616

Chicago

Akgül Taner, Fatma Betül. 2025. “Characterization of SiO2 Thin Films Deposited by LPCVD”. Journal of the Turkish Chemical Society Section B: Chemical Engineering 8 (2): 213-22. https://doi.org/10.58692/jotcsb.1607616.

EndNote

Akgül Taner FB (September 1, 2025) Characterization of SiO2 Thin Films Deposited by LPCVD. Journal of the Turkish Chemical Society Section B: Chemical Engineering 8 2 213–222.

IEEE

[1]F. B. Akgül Taner, “Characterization of SiO2 Thin Films Deposited by LPCVD”, JOTCSB, vol. 8, no. 2, pp. 213–222, Sept. 2025, doi: 10.58692/jotcsb.1607616.

ISNAD

Akgül Taner, Fatma Betül. “Characterization of SiO2 Thin Films Deposited by LPCVD”. Journal of the Turkish Chemical Society Section B: Chemical Engineering 8/2 (September 1, 2025): 213-222. https://doi.org/10.58692/jotcsb.1607616.

JAMA

1.Akgül Taner FB. Characterization of SiO2 Thin Films Deposited by LPCVD. JOTCSB. 2025;8:213–222.

MLA

Akgül Taner, Fatma Betül. “Characterization of SiO2 Thin Films Deposited by LPCVD”. Journal of the Turkish Chemical Society Section B: Chemical Engineering, vol. 8, no. 2, Sept. 2025, pp. 213-22, doi:10.58692/jotcsb.1607616.

Vancouver

1.Fatma Betül Akgül Taner. Characterization of SiO2 Thin Films Deposited by LPCVD. JOTCSB. 2025 Sep. 1;8(2):213-22. doi:10.58692/jotcsb.1607616