Characterization of SiO2 Thin Films Deposited by LPCVD

Year 2025, Volume: 8 Issue: 2, 213 - 222, 15.09.2025

Fatma Betül Akgül Taner

https://doi.org/10.58692/jotcsb.1607616

Abstract

In this study, SiO2 film grown at different pressures using TEOS (tetraethyl orthosilicate) and O2 gas was characterized by LPCVD (Low Pressure Chemical Vapor Deposition) method. The effect of high temperature annealing processes on the SiO2 film structure was investigated. SiO2 growth rate, etch rate, refractive index, stress, curvature values, film densities, and film structures were investigated with different analysis methods. In addition, impurities arising from the by-products of the reaction of TEOS and O2 were detected in the SiO2 film. AFM and RAMAN were used for the contamination detection analysis.

Keywords

LPCVD , SiO2 , film characterization

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