EFFECTS of LOW REACTION RATE on ZNO THIN FILMS PRODUCED by a CHEMICAL BATH DEPOSITION METHOD

Abstract

In the presented study, while ZnO thin films were deposited onto glass substrates, chemical bath deposition method was used and Na2S2O3 was used as an inhibitor to reduce the reaction rate. Four different samples were produced using 0, 4, 8 and 16mM Na2S2O3, respectively. The images obtained from the scanning electron microscope showed that the amount of nano flowers on the film surfaces decreased due to the increase in the amount of inhibitor. The X-ray diffraction results were consistent with the ASTM card and showed that all the films were crystallized in a hexagonal structure. UV measurements showed that the absorbance value of the sample obtained without the use of inhibitor was up to four times higher than the other samples. It was observed that the energy band gaps of the films increased up to 4.24 eV depending on the amount of inhibitor. Visual analysis showed that all films adhered very well to the glass surface.

Keywords

• ZnO
• Thin film
• Chemical bath deposition
• İnhibitor

References

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