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ZnO-In2O3-SnO2 THIN FILM TRANSPARENT HEATERS: TUNABLE ELECTROTHERMAL PROPERTIES THROUGH SUBSTRATE TEMPERATURE AND POSTGROWTH ANNEALING

Year 2025, Volume: 13 Issue: 1, 25 - 43, 01.03.2025
https://doi.org/10.36306/konjes.1573794

Abstract

Amorphous thin films of ZnO-In2O3-SnO2 (a-ZITO) were manufactured using magnetron sputtering technique for the applications of thin film transparent heaters (TFTHs). For this purpose, a custom-made 3” sputtering target was prepared with a specific composition in terms of the atomic percentages (at.%) of Zn, In, and Sn cations. The impact of varying substrate temperatures on the characteristics of the samples investigated by depositing the films on glass substrates maintained at room temperature, 150 °C, and 250 °C. To improve the optical and electrical properties, post-growth annealing was carried out under forming gas atmosphere at 400 °C. Structural, morphological, optical, and electrical properties of the samples were thoroughly examined. Electrothermal characterization was performed on samples at room temperature and -40 °C to evaluate response time, saturation temperature, thermal homogeneity, stability, recyclability, thermal resistance, and the defogging/deicing capability of the produced TFTHs. The films produced at 150 °C demonstrated an exceptional electrothermal response, with the thermal resistance calculated to be 181.7 °C·cm²/W under 12 V input. With a measured power density of 0.4635 Watt/cm², this heater was able to melt all ice and evaporate water droplets on the surface within 173 s, indicating a promising performance for commercial defogging/deicing applications.

Ethical Statement

The authors declare that they have no conflict of interest.

Supporting Institution

TÜBİTAK

Project Number

118M013

Thanks

This study was produced from the MSc thesis of Hilal Aybike CAN and supported financially by the Scientific and Technological Research Council of Turkey (TÜBİTAK; Project Number: 118M013), for which the authors are thankful.

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Year 2025, Volume: 13 Issue: 1, 25 - 43, 01.03.2025
https://doi.org/10.36306/konjes.1573794

Abstract

Project Number

118M013

References

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  • C.A. Hoel, T.O. Mason, J.-F. Gaillard, and K.R. Poeppelmeier, “Transparent Conducting Oxides in the ZnO-In2O3-SnO2 System,” Chemistry of Materials, vol. 22, no. 12, pp. 3569-3579, 2010.
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  • M.H. Cho, C.H. Choi, and J.K. Jeong, “Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications,” Journal of the Society for Information Display, vol. 30, no. 3, pp. 175-197, 2022.
  • I. Noviyana, A.D. Lestari, M. Putri, M.-S. Won, J.-S. Bae, Y.-W. Heo, and H.Y. Lee, “High mobility thin film transistors based on amorphous indium zinc tin oxide,” Materials, vol. 10, no. 7, pp. 702, 2017.
  • J. Sheng, T. Hong, D. Kang, Y. Yi, J.H. Lim, and J.-S. Park, “Design of InZnSnO semiconductor alloys synthesized by supercycle atomic layer deposition and their rollable applications,” ACS applied materials & interfaces, vol. 11, no. 13, pp. 12683-12692, 2019.
  • T. Kim, C.H. Choi, J.S. Hur, D. Ha, B.J. Kuh, Y. Kim, M.H. Cho, S. Kim, and J.K. Jeong, “Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated semiconductor chips,” Advanced Materials, vol. 35, no. 43, pp. 2204663, 2023.
  • T.E. Taouririt, A. Meftah, N. Sengouga, M. Adaika, S. Chala, and A. Meftah, “Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey,” Nanoscale, vol. 11, no. 48, pp. 23459-23474, 2019.
  • H. Yang, W. Yang, J. Su, and X. Zhang, “Enhancement-mode thin film transistor using amorphous phosphorus-doped Indium–Zinc–Tin-Oxide channel layer,” Materials Science in Semiconductor Processing, vol. 137, no. pp. 106228, 2022.
  • Y.G. Bak, J.W. Park, Y.J. Park, M.Z. Ansari, S. NamGung, B.Y. Cho, S.-H. Kim, and H.Y. Lee, “In-Zn-Sn-O thin film based transistor with high-k HfO2 dielectric,” Thin Solid Films, vol. 753, no. pp. 139290, 2022.
  • Y. Li, S. Yin, Y. Du, H. Zhang, J. Chen, Z. Wang, S. Wang, Q. Qin, M. Zhou, and L. Li, “Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications,” Nanoscale, vol. 14, no. 45, pp. 16797-16805, 2022.
  • C.P.T. Nguyen, T.T. Trinh, J. Raja, A.H.T. Le, K. Jang, Y.-J. Lee, and J. Yi, “High performance non-volatile memory with the control of charge trapping states in an amorphous InSnZnO active channel,” Semiconductor Science and Technology, vol. 30, no. 7, pp. 075009, 2015.
  • J.-H. Bae, J.-M. Moon, S.W. Jeong, J.-J. Kim, J.-W. Kang, D.-G. Kim, J.-K. Kim, J.-W. Park, and H.-K. Kim, “Transparent conducting indium zinc tin oxide anode for highly efficient phosphorescent organic light emitting diodes,” Journal of The Electrochemical Society, vol. 155, no. 1, pp. J1, 2007.
  • G.-S. Heo, Y. Matsumoto, I.-G. Gim, J.-W. Park, K.-Y. Kim, and T.-W. Kim, “Fabrication of cosputtered Zn–In–Sn–O films and their applications to organic light-emitting diodes,” Solid state communications, vol. 149, no. 41-42, pp. 1731-1734, 2009.
  • T.-W. Kim, G.-S. Heo, H.-S. Kim, and J.-H. Lee, “Combinatorial exploration of new transparent conducting oxide films by using radio frequency sputtering and their application in optoelectronic devices,” MRS Online Proceedings Library (OPL), vol. 1425, no. pp. mrsf11-1425-uu01-04, 2012.
  • S.W. Heo, E.J. Lee, Y.W. Han, Y.S. Lee, W.J. Lee, S.-H. Choa, Y.S. Kim, and D.K. Moon, “Improved performance of flexible polymer light emitting diodes with an indium-zinc-tin-oxide transparent anode by controlling the thermal treatment temperature,” Journal of industrial and engineering chemistry, vol. 53, no. pp. 68-76, 2017.
  • H.-K. Jeong and K.-M. Lee, “Effects of flow rate of atmosphere gases on the characteristics of Zn-doped ITO (ZITO) thin films for organic light emitting diodes,” Functional Materials Letters, vol. 8, no. 03, pp. 1540007, 2015.
  • H.J. Lee, I. Noviyana, C.Y. Koo, J.-A. Lee, J.-J. Kim, A.D. Lestari, Y. Jeong, Y. Lee, and H.Y. Lee, “Organic Photovoltaics with Non-Stoichiometric InZnSnO Thin Film Cathodes,” Journal of Nanoscience and Nanotechnology, vol. 17, no. 7, pp. 4822-4826, 2017.
  • H.J. Lee, I. Noviyana, M. Putri, C.Y. Koo, J.-A. Lee, J.-J. Kim, Y. Jeong, Y. Lee, and H.Y. Lee, “DC Magnetron Sputtered IZTO Thin Films for Organic Photovoltaic Application,” Journal of Nanoscience and Nanotechnology, vol. 18, no. 2, pp. 1270-1273, 2018.
  • M. Putri, K.H. Kim, C.Y. Koo, J.-A. Lee, J.-J. Kim, I.D. Baikie, A.C. Grain, and H.Y. Lee, “Effect of annealing treatment on the properties of stoichiometric indium zinc tin oxide (IZTO) thin films,” Journal of Nanoelectronics and Optoelectronics, vol. 12, no. 6, pp. 611-616, 2017.
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There are 67 citations in total.

Details

Primary Language English
Subjects Compound Semiconductors, Electronic, Optics and Magnetic Materials, Functional Materials
Journal Section Research Article
Authors

Hasan Akyıldız 0000-0001-8974-0520

Hilal Aybike Can 0000-0003-3226-7765

Burak Kıvrak 0000-0002-6785-7346

Tayfur Ozturk 0000-0001-5780-1966

Project Number 118M013
Publication Date March 1, 2025
Submission Date October 25, 2024
Acceptance Date December 16, 2024
Published in Issue Year 2025 Volume: 13 Issue: 1

Cite

IEEE H. Akyıldız, H. A. Can, B. Kıvrak, and T. Ozturk, “ZnO-In2O3-SnO2 THIN FILM TRANSPARENT HEATERS: TUNABLE ELECTROTHERMAL PROPERTIES THROUGH SUBSTRATE TEMPERATURE AND POSTGROWTH ANNEALING”, KONJES, vol. 13, no. 1, pp. 25–43, 2025, doi: 10.36306/konjes.1573794.