Effects of Annealing on Reflectance of ZnO Grown by PFCVAD

Abstract

ZnO thin film was prepared onto microscope glass slide substrate by using pulsed filtered cathodic vacuum arc deposition system. ZnO thin film was thermally annealed for one hour at three different temperatures in air. The film structure was investigated as a function of annealing temperature by x-ray diffraction (XRD). As-deposited film shows amorphous property. The grain size increases with the increase of annealing temperature. The dependence of optical properties on annealing was investigated using UV–Vis-NIR spectrophotometer. When the annealing temperature increased, the diffuse reflection was reduced. When the angle of incidence specular reflectance increased from angle of 30 degrees to angle of 60 degrees, specular reflectance was increased. When annealing temperature increased, specular reflectance was also increased for angle of 30 and 60 degrees. In addition the optical band gap of ZnO film was observed and found to be varying from 3.22 eV to 3.25 eV with the annealing temperature.

Keywords

• Zinc oxide (ZnO); Annealing temperature; Diffuse and specular reflectance; Optical band gap

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