EFFECT OF MAGNETIC FIELD ON GERMANIUM P-N HOMOJUNCTION

Year 2021, Volume: 7 Issue: 2, 1 - 5, 31.12.2021

Duygu Akın Kara Ozan Kıyıkcı Görkem Oylumluoğlu

https://doi.org/10.22531/muglajsci.987733

Abstract

In this study, the effect of magnetic field, which is perpendicular to junction current, on diffusion current has been investigated in Germanium based p-n homojunction diodes, theoretically. The magnetic field dependent diffusion current has been derived analytically. Resulting magnetic field dependent diode equation has been used to produce current – voltage theoretical data. Using this data, current – voltage curves of devices, I(B) - V have been plotted under different magnetic fields and effect of magnetic field on current – voltage characteristics has been investigated. According to these results, it has been observed that increasing magnetic field increases potential barrier Vth, decreases junction current and reverse saturation current I0. Also effect of magnetic field on static and dynamic magnetoresistances, using R_d(B) – V and R_s(B) – V graphs which is plotted using theoretical data, have been analyzed and it has been observed that increasing magnetic field increases static and dynamic magnetoresistance in Germanium based devices.

Keywords

Keywords: Semiconductor, magnetic field, magnetoresistance, p-n junction

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