Research Article
BibTex RIS Cite
Year 2020, Volume: 1 Issue: 2, 89 - 96, 31.12.2020

Abstract

References

  • 1. Ahmad, M., Butt, H. T., Tauqeer, T., & Missous, M. (2012, 11-15 Nov. 2012). DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT). Paper presented at the The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems.
  • 2. Ahmad, N., Arshad, S., & Missous, M. (2010, 25-27 Oct. 2010). New InP based pHEMT double stage differential to single-ended MMIC low noise amplifiers for SKA. Paper presented at the The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.
  • 3. Arshad, S., Mohiuddin, M., Bouloukou, A., & Missous, M. (2008, 12-16 Oct. 2008). Physical Modelling of the Kink Effect in Strained InGaAs/InAlAs pHEMTs. Paper presented at the 2008 International Conference on Advanced Semiconductor Devices and Microsystems.
  • 4. Aziz, A. A., & Missous, M. (1996, 25-26 Nov. 1996). InGaP/InGaAs/GaAs pseudomorphic HEMT grown by solid source MBE. Paper presented at the Proceedings of EDMO '96.
  • 5. Aziz, A. A., & Missous, M. (1997, 25-25 Nov. 1997). Fabrication and characterisation of AlGaAs/InGaAs/GaAs pseudomorphic HEMT with in-situ epitaxial aluminium grown by MBE. Paper presented at the IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat.
  • 6. Güneş, F., & Demirel, S. (2016). Performance characterization of a microwave transistor subject to the noise and matching requirements. International Journal of Circuit Theory and Applications, 44(5), 1012-1028. doi:10.1002/cta.2120
  • 7. SATILMIŞ, G., GÜNEŞ, F., & MAHOUTI, P. (2019). Calculation of Scattering Parameters for a MESFET Transistor. Paper presented at the 4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES.
  • 8. Satılmış, G., Güneş, F., & Mahouti, P. Physical parameter-based data-driven modeling of small signal parameters of a metal-semiconductor field-effect transistor. n/a(n/a), e2840. doi:https://doi.org/10.1002/jnm.2840
  • 9. Dragica Vasileska, S. M. G. (2006). Computational Electronics: Morgan &Claypool Publishers.
  • 10. PHEMT High Frequency Analysis. 2020 [cited 2020 17.01.2020]; Available from: https://silvaco.com/examples/tcad/section10/example6/index.html

The Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistor

Year 2020, Volume: 1 Issue: 2, 89 - 96, 31.12.2020

Abstract

In this paper, various physical device simulation of pseudomorphic High Electron Mobility Transistos are realized to show the effect of align parameter on scattering parameters. S parameters are complex numbers,so both real and imaginer part of scattering parameters are plotted with respect to frequency at different align parameters. In all figures, a brief explanation about the change of S parameter with respect to frequency and align parameter are provided. The effect of align parameter, which has a value of 0.4 differ from other align parameter values such as 0.45, 0.5, 0.55 and 0.6 on scattering parameters of the tranistor structure.

References

  • 1. Ahmad, M., Butt, H. T., Tauqeer, T., & Missous, M. (2012, 11-15 Nov. 2012). DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT). Paper presented at the The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems.
  • 2. Ahmad, N., Arshad, S., & Missous, M. (2010, 25-27 Oct. 2010). New InP based pHEMT double stage differential to single-ended MMIC low noise amplifiers for SKA. Paper presented at the The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.
  • 3. Arshad, S., Mohiuddin, M., Bouloukou, A., & Missous, M. (2008, 12-16 Oct. 2008). Physical Modelling of the Kink Effect in Strained InGaAs/InAlAs pHEMTs. Paper presented at the 2008 International Conference on Advanced Semiconductor Devices and Microsystems.
  • 4. Aziz, A. A., & Missous, M. (1996, 25-26 Nov. 1996). InGaP/InGaAs/GaAs pseudomorphic HEMT grown by solid source MBE. Paper presented at the Proceedings of EDMO '96.
  • 5. Aziz, A. A., & Missous, M. (1997, 25-25 Nov. 1997). Fabrication and characterisation of AlGaAs/InGaAs/GaAs pseudomorphic HEMT with in-situ epitaxial aluminium grown by MBE. Paper presented at the IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat.
  • 6. Güneş, F., & Demirel, S. (2016). Performance characterization of a microwave transistor subject to the noise and matching requirements. International Journal of Circuit Theory and Applications, 44(5), 1012-1028. doi:10.1002/cta.2120
  • 7. SATILMIŞ, G., GÜNEŞ, F., & MAHOUTI, P. (2019). Calculation of Scattering Parameters for a MESFET Transistor. Paper presented at the 4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES.
  • 8. Satılmış, G., Güneş, F., & Mahouti, P. Physical parameter-based data-driven modeling of small signal parameters of a metal-semiconductor field-effect transistor. n/a(n/a), e2840. doi:https://doi.org/10.1002/jnm.2840
  • 9. Dragica Vasileska, S. M. G. (2006). Computational Electronics: Morgan &Claypool Publishers.
  • 10. PHEMT High Frequency Analysis. 2020 [cited 2020 17.01.2020]; Available from: https://silvaco.com/examples/tcad/section10/example6/index.html
There are 10 citations in total.

Details

Primary Language English
Journal Section Research Articles
Authors

Gökhan Satılmış 0000-0002-8188-7242

Publication Date December 31, 2020
Submission Date December 6, 2020
Acceptance Date December 30, 2020
Published in Issue Year 2020 Volume: 1 Issue: 2

Cite

APA Satılmış, G. (2020). The Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistor. NATURENGS, 1(2), 89-96.