INVESTIGATION OF THE EFFECT OF N2 GAS FLOW RATE ON THE OPTICAL, STRUCTURAL AND MORPHOLOGICAL PROPERTIES OF INDIUM-GALLIUM-NITRIDE TRIPLE THIN FILMS OBTAINED BY SPUTTER TECHNIQUE

Yıl 2018, Cilt: 7 Sayı: 2, 1013 - 1022, 20.07.2018

Erman Erdoğan , Mutlu Kundakçı

https://doi.org/10.28948/ngumuh.445524

Öz

In
this research work, InGaN (Indium Gallium Nitride) triple compound was grown
under different N₂ gas flow rates by using sputtering technique. The
structural, optical and morphological characteristics of the InGaN compound
have been studied in detail. In the XRD analysis, films exhibited hexagonal
crystal structure. The films appear at lower wavelengths in visible region and
absorption values begin to increase sharply from about 550-560 nm and reach the
highest absorption value in the Near-UV region. When gas flow rates increased,
the optical band gaps of the film increased. In SEM, the film exhibits dense
coverage of the material on the surface of the substrate without the presence
of voids, pinholes or cracks. In the results of the AFM, there are locally
peaks and valleys, and partially homogeneous and circular-like clusters are
arranged. Films are suitable structures for use in device applications.

Anahtar Kelimeler

III-V compounds, sputtering, nitrogen gas flow, physical characteristics, thin films

N2 GAZ AKIŞ HIZININ, SPUTTER TEKNİĞİNDEN ELDE EDİLEN İNDİYUM-GALYUM-NİTRÜR ÜÇLÜ İNCE FİLMİNİN OPTİK, YAPISAL VE MORFOLOJİK ÖZELLİKLERİNE ETKİSİNİN İNCELENMESİ

Öz

Bu
araştırma çalışmasında, InGaN (İndiyum Galyum Nitrür) üçlü bileşiği, saçtırma tekniği
kullanılarak farklı N₂ gaz akış oranları altında büyütülmüştür.
InGaN bileşiğinin yapısal, optik ve morfolojik özellikleri detaylı olarak
incelenmiştir. XRD analizinde, filmler hegzagonal kristal yapı sergilemiştir.
Filmler, görünür bölgede daha düşük dalga boylarında ortaya çıkmıştır ve soğurma
değerleri, yaklaşık 550-560 nm'den itibaren keskin bir şekilde artmaya başlar
ve Near-UV bölgesinde en yüksek soğurma değerine ulaşmıştır. Gaz akış hızı
arttığında, filmin optik bant aralıkları artmıştır. SEM'de film, altlığın
yüzeyi üzerindeki malzemenin boşluklar, iğne delikleri veya çatlaklar olmadan
yoğun bir şekilde kaplanmasını göstermiştir. AFM sonuçlarında, yerel tepeler ve
vadiler vardır ve kısmen homojen ve dairesel benzeri kümeler düzenlenmiştir.
Filmler, cihaz uygulamalarında kullanım için uygun yapılardır.

Anahtar Kelimeler

III-V bileşikleri, saçtırma, azot gazı akışı, fiziksel özellikler, ince filmler

Kaynakça

• [1] STEINER, T.,(ed.) “Semiconductor nanostructures for optoelectronic applications”, Artech House, 2004.
• [2] SESHAN, K., (ed.) “Handbook of thin film deposition”, William Andrew, 2012.
• [3] MORKOÇ, H., “Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth”, John Wiley & Sons, 1, 2009.
• [4] VURGAFTMAN, I., MEYER, J. R., RAM-MOHAN, L. R., “Band parameters for III–V compound semiconductors and their alloys”, Journal of Applied Physics, 89(11), 5815-5875, 2001.
• [5] HUANG, C. F., HSİEH, W. Y., HSİEH, B. C., HSİEH, C. H., LİN, C. F., “Characterization of InGaN-based photovoltaic devices by varying the indium contents”, Thin Solid Films, 529, 278-281, 2013.
• [6] FABİEN, C. A., GUNNING, B. P., DOOLITTLE, W. A., FISCHER, A. M., WEI, Y. O., XIE, H., PONCE, F. A., “Low-temperature growth of InGaN films over the entire composition range by MBE”, Journal of Crystal Growth, 425, 115-118, 2015.
• [7] GHERASOIU, I., YU, K. M., REICHERTZ, L., WALUKIEWICZ, W., “InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices”, Journal of Crystal Growth, 425, 393-397, 2015.
• [8] CHEN, Y. S., LIAO, C. H., KUO, C. T., TSIANG, R. C. C., WANG, H. C., “Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD”, Nanoscale Research Letters, 9(1), 334, 2014.
• [9] KADYS, A., MALINAUSKAS, T., GRINSYS, T., DMUKAUSKAS, M., MICKEVICIUS, J., ALEKNAVICIUS, J., TOMASIUNAS, R., SELSKIS, A., KONDROTAS, R., STANIONYTE, S., LUGAUER, H., STRASSBURG, M.,” Growth of InN and In-rich InGaN layers on GaN templates by pulsed metalorganic chemical vapor deposition”, Journal of Electronic Materials, 44(1), 188-193, 2015.
• [10] JAKKALA, P., KORDESCH, M. E., “Electrical properties of InGaN thin films grown by RF sputtering at different temperatures, varying nitrogen and argon partial pressure ratios”, Materials Research Express, 3(10), 106406, 2016.
• [11] ITOH, T., HIBINO, S., SAHASHI, T., KATO, Y., KOISO, S., OHASHI, F., NONOMURA, S., “In X Ga 1-X N films deposited by reactive RF-sputtering”, Journal of Non-Crystalline Solids, 358(17), 2362-2365, 2012.
• [12] LI, C. C., KUO, D. H., HSIEH, P. W., HUANG, Y. S., “Thick In^ sub x^ Ga^ sub 1-x^ N Films Prepared by Reactive Sputtering with Single Cermet Targets”, Journal of Electronic Materials, 42(8), 2445, 2013.
• [13] GUO, Q., NAKAO, T., USHIJIMA, T., SHI, W., LIU, F., SAITO, K., TANAKA, T., NISHIO, M. “Growth of InGaN layers on (111) silicon substrates by reactive sputtering”, Journal of Alloys and Compounds, 587, 217-221, 2014.
• [14] GUO, Q., KUSUNOKI, Y., DING, Y., TANAKA, T., NISHIO, M., “Properties of InGaN Films Grown by Reactive Sputtering”, Japanese Journal of Applied Physics, 49(8R), 081203, 2010.
• [15] WANG, X., HE, L., LI, X., SU, X., ZHANG, Z., ZHAO, W., “Structural and Morphological Characteristics of Inxga1-xN Films Grown on SI (111) by Reactive Magnetron Sputtering”, In MATEC Web of Conferences, EDP Sciences, 67, 04013, 2016.
• [16] YADAV, B. S., MOHANTA, P., SRINIVASA, R. S., MAJOR, S. S., “Electrical and optical properties of transparent conducting In x Ga 1− x N alloy films deposited by reactive co-sputtering of GaAs and indium”, Thin Solid Films, 555, 179-184, 2014.
• [17] KELLY, P. J., ARNELL, R. D., “Magnetron sputtering: a review of recent developments and applications”, Vacuum, 56(3), 159-172, 2000.
• [18] SWANN, S., “Magnetron sputtering”, Physics in technology, 19(2), 67, 1988.
• [19] LWSZCZYNSKI, M., CZEMECKI, R., KRUKOWSKI, S., KRYSKO, M., TARGOWSKI, G., PRYSTAWKO, P., PLESIEWIZC, J., PERLIN, P., SSUSKI, T., “Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy”, Journal of Crystal Growth, 318(1), 496-499, 2011.
• [20] FALEEV, N., JAMPANA, B., JANI, O., YU, H., OPILA, R., FERGUSON, I., HONSBERG, C., “Correlation of crystalline defects with photoluminescence of InGaN layers”, Applied Physics Letters, 95(5), 051915, 2009.
• [21] PEDDIGARI, M., SINDAM, B., RAJU, K. C., DOBBIDI, P., “Optical and microwave dielectric properties of phase pure (K0. 5Na0. 5) NbO3 thin films deposited by RF magnetron sputtering”, Journal of the American Ceramic Society, 98(5), 1444-1452, 2015.
• [22] SRINIVASARAO, K., SRINIVASARAO, G., MADHURI, K. V., KRISHNA MURTHY, K., MUKHOPADHYAY, P. K., “Preparation and characterization of RF magnetron sputtered Mo: ZnO thin films”, Indian Journal of Materials Science, 2013, 1-7, 2013.
• [23] HAJAKBARI, F., ENSANDOUST, M., “Study of Thermal Annealing Effect on the Properties of Silver Thin Films Prepared by DC Magnetron Sputtering”, Acta Physica Polonica A, 129(4), 680-682, 2016.
• [24] DU, W., YANG, J., XIONG, C., ZHAO, Y., ZHU, X., “Preferential orientation growth of ITO thin film on quartz substrate with ZnO buffer layer by magnetron sputtering technique”, International Journal of Modern Physics B, 31(16-19), 1744065, 2017.
• [25] NIVEDITA, L. R., KUMAR, V. V. S., ASOKAN, K., RAJENDRAKUMAR, R. T., “Growth and Magnetic Properties of RF Sputtered Fe-Ga Thin Films”, Materials Research, 18(5), 946-952, 2015.
• [26] DHANUNJAYA, M., MANIKANTHABABU, N., PATHAK, A. P., RAO, S. N., “Effect of growth rate on crystallization of HfO2 thin films deposited by RF magnetron sputtering”, In AIP Conference Proceedings 1731(1), 080071, 2016.
• [27] HOJABRI, A., “Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates”, Journal of Theoretical and Applied Physics, 10(3), 219-224, 2016.
• [28] ZENG, L., TAO, L., TANG, C., ZHOU, B., LONG, H., CHAI, Y., LAU, S. P., TSANG, Y. H., “High-responsivity uv-vis photodetector based on transferable WS 2 film deposited by magnetron sputtering”, Scientific Reports, 6, 20343, 2016.
• [29] BOURAS, K., SCHMERBER, G., RINNERT, H., AUREAU, D., PARK, H., FERBLANTIER, G., COLIS, S., FIX, T., PARK, C., KIM, W.K., DINIA, A., SLAOUI, A., “Structural, optical and electrical properties of Nd-doped SnO2 thin films fabricated by reactive magnetron sputtering for solar cell devices”, Solar Energy Materials and Solar Cells, 145, 134-141, 2016.
• [30] SRINATHA, N., NO, Y. S., KAMBLE, V. B., CHAKRAVARTY, S., SURIYAMURTHY, N., ANGADI, B., UMARJI, A.M., Choi, W. K., “Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films”, RSC Advances, 6(12), 9779-9788, 2016.
• [31] SCHERRER, P., “Bestimmung der GrSlIe and der inneren Struktur yon Kolloidteilchen mittels RSntgenstrahlen Nachr Ges Wiss GSttingen, 1918.
• [32] WARREN, B. E., “X-ray Diffraction”, Dover, New York, 253, 1990.
• [33] WANG, J., HOU, X. H., SHI, X. J., ZHU, J., “Effects of Nitrogen Flow Ratio on the Properties of Radiofrequency-Sputtered InGaN Films”, Journal of Electronic Materials, 44(4), 1160-1166, 2015.
• [34] BASU, P. K., “Theory of optical processes in semiconductors: bulk and microstructures”, Clarendon press, 4, 1997.
• [35] WANG J., SHI, X. J., ZHU, J., “Low-temperature growth of InxGa1− xN films by radio-frequency magnetron sputtering”, Applied Surface Science, 265, 399-404, 2013.
• [36] ABUD, S. H., HASSAN, Z., YAM, F. K., “Physical properties of porous In0. 08Ga0. 92N”, Int. J. Nanoelectronics and Materials, 8, 33-38, 2015.
• [37] KOLANEK, K., TALLARIDA, M., KARAVAEV, K., SCHMEISSER, D., “In situ studies of the atomic layer deposition of thin HfO2 dielectrics by ultra-high vacuum atomic force microscope”, Thin Solid Films, 518(16), 4688-4691, 2010.
• [38] TAYEBI, N., POLYCARPOU, A. A., “Modeling the effect of skewness and kurtosis on the static friction coefficient of rough surfaces”, Tribology International, 37(6), 491-505, 2004.