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HIGH EFFICENT c-Si HETEROJUNCTION SOLAR CELL FABRICATION AND CHARACTERIZATION

Year 2019, Volume: 8 Issue: 2, 1307 - 1314, 31.07.2019
https://doi.org/10.28948/ngumuh.542803

Abstract

   c-Silicon
(c-Si) heterojunction technology consisting of thin amorphous silicon layers on
monocrystalline silicon wafers is an important research topic studied by many
researchers and scientist in the field of photovoltaic in recent years. Silicon
heterojunction solar cell technology is a solar cell technology that has proven
itself with high energy conversion efficiency, competitive industrial
production cost and has the ability to integrate newly developed technologies
into its structure. In this study, the fabrication stages and characterization
of silicon heterojunction solar cells are studied in detail. The a-Si: H thin
film properties such as thickness, bandgap, carrier lifetime of solar cells
were investigated and optimized via ellipsometer, profilometer and carrier
lifetime. A 19,7 % efficient solar cell was fabricated on a 6-inch n-type c-Si wafers
with intrinsic amorphous thin-layer structure (c-Si HIT). 

References

  • [1] DE WOLF S., DESCOEUDRES A., HOLMAN Z. C., BALLIF C., “High-efficiency silicon heterojunction solar cells: A review”, Green, 2(1), 7-24, 2012[2] LIU, Y., SUN, Y., LIU, W., YAO, J., “Novel high-efficiency crystalline-silicon-based compound heterojunction solar cells: HCT (heterojunction with compound thin-layer)”, Physical Chemistry Chemical Physics, 16 (29), 15400-15410, 2014[3] PATEL, K., TYAGI, P. K., “Technological advances in a-Si: H/c-Si Heterojunction solar cells”. International Journal of Renewable Energy Research (IJRER), 4 (2), 528-538, 2014[4] TAGUCHI, M., YANO, A., TOHODA, S., MATSUYAMA, K., NAKAMURA, Y., NISHIWAKI, T., FUJİTA, K., MARUYAMA, E., “24.7% record efficiency HIT solar cell on thin silicon wafer”. IEEE Journal of Photovoltaics, 4(1), 96-99, 2014[5] TSUNOMURA, Y., YOSHIMINE, Y., TAGUCHI, M., BABA, T., KINOSHITA, T., KANNO, H., SAKATA, H., MARUYAMA, E., TAKANA, M., “Twenty-two percent efficiency HIT solar cell”. Solar Energy Materials and Solar Cells, 93(6), 670-673, 2009[6] SHOCKLEY, W., & QUEISSER, H. J., “Detailed balance limit of efficiency of p‐n junction solar cells”. Journal of applied physics, 32(3), 510-519, 1961[7] MAKOTO, T., MIKIO, T., TAKAO, M., TORU, S., SHINYA, T., SHOICHI, N., HIROSGI, H., YUKINORI, K., “Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)”. Japanese Journal of Applied Physics, 31(11R), 3518 –3522, 1992[8] TAGUCHI, M., TSUNOMURA, Y., INOUE, H., TAIRA, S., NAKASHIMA, T., BABA, T., SAKATA, H., MARUYAMA, E., “High efficiency HIT solar cell on thin (< 100 μm) silicon wafer”. In Proceedings of the 24th European Photovoltaic Solar Energy Conference 1690–1693, 2009.[9] http://panasonic.net/sanyo/news/2010/12/03-2.pdf, (erişim tarihi 05.02.2019)[10] WANG, Q., PAGE, M., IWANICZKO, E., XU, Y., ROYBAL, L., BAUER, HASOON, F., “Efficient heterojunction solar cells on p-type crystal silicon wafers”. Applied Physics Letters, 96(1), 013507, 2010.[11] LACHENAL, D., ANDRAULT, Y., BAETZNER, D., GUERİN, C., KOBAŞ, M., MENDES, B., BUECHEL, A., “High efficiency silicon heterojunction solar cell activities in Neuchatel, Switzerland”. In 25th European Photovoltaic Solar Energy Conference and Exhibition/5th World Conference on Photovoltaic Energy Conversion, Valencia, Spain, pp: 1272–1275, 2010.[12] STRAHM, B ANDRAULT, Y., BAETZNER, D., GUERİN, C., HOLMES, N., KOBAŞ, M., WAHLI, G., “Progress in silicon hetero-junction solar cell development and scaling for large scale mass production use”, Proc. of the 25th European Photovoltaic Solar Energy Conference and Exhibition and the 5th World Conference on Photovoltaic Energy Conversion, Valencia, Spain, 1286–1289, 2010.[13] FELDMANN, F., BIVOUR, M., REICHEL, C., HERMLE, M., GLUNZ, S., “A passivated rear contact for high-efficiency n-type silicon solar cells enabling high Vocs and FF> 82%”. 28th European Photovoltaic Solar Energy Conference and Exhibition, Fransa, 2013.[14] http://www.kaneka.co.jp/en/service/news/nr201708252/, (erişim tarihi 05.02.2019)[15] http://sunpreme.com/technology-main/, (erişim tarihi 05.02.2019)[16] LIU, J., YAO, Y., XIAO, S. and GU, X., "Review of status developments of high-efficiency crystalline silicon solar cells", Journal of Physics D: Applied Physics 51 (12): 123001, 2018.[17] OHSHITA, Y., KAMIOKA, T. and NAKAMURA, K., "Technology Trend of High Efficiency Crystalline Silicon Solar Cells", AAPPS Bulletin 27 (3), 2-8, 2017.[18] http://www.kaneka.co.jp/wp-kaneka/wp-content/uploads/2017/06/1479120629_101.pdf (erişim tarihi 05.02.2019)[19] https://news.panasonic.com/global/press/data/2016/03/en160302-2/en160302-2.html, (erişim tarihi 05.02.2019) [20] https://www.nrel.gov/pv/assets/pdfs/pv-efficiency-chart.20190103.pdf, (erişim tarihi 05.02.2019)[21] RUCAVADO E., JEANGROS Q., URBAN D. F., Holovský J., REMES Z., DUCHAMP M., LANDUCCI F., Dunin-Borkowski R., KÖRNER W., ELSÄSSER C., HESSLER-WYSER A., MORALES-MASIS M. and BALLIF C., “Enhancing the optoelectronic properties of amorphous zinc-tin oxide by passivation of sub-gap defects: a theoretical and experimental demonstration”, Phys. Rev. B 95, 24, 2017.[22] WERNER J., WALTER A., RUCAVADO E., MOON S.-J., SACCHETTO D., RIENAECKER M., PEIBST R., BRENDEL R., NIQUILLE X., WOLF S. De, LÖPER P., MORALES-MASIS M., NICOLAY S., NIESEN B., BALLIF C., “Zinc Tin Oxide as High-Temperature Stable Recombination Layer for Mesoscopic Perovskite/Silicon Monolithic Tandem Solar Cells”, Appl. Phys. Lett. 109, 2016[23] ALTAN T., Silisyum Hetero-eklem Güneş Hücrelerinde Ön Yüz Metalizasyon Optimizasyonu ve Alternatif Ön Yüz Metalizasyon Yöntemi, Niğde Ömer Halisdemir Üniversitesi Fen Bilimleri Enstitüsü Makine Mühendisliği Ana Bilim Dalı Yüksek Lisans tezi, Türkiye, 2018.

YÜKSEK VERİMLİ KRİSTAL SİLİSYUM (c-Si) HETEROEKLEM GÜNEŞ HÜCRELERİ ÜRETİMİ VE KARAKTERİZASYONU

Year 2019, Volume: 8 Issue: 2, 1307 - 1314, 31.07.2019
https://doi.org/10.28948/ngumuh.542803

Abstract

   Tek kristalli silisyum (Si) alttaşlar
üzerine ince a-Si tabakalardan oluşan c-silisyum heteroeklem teknolojisi son
yıllarda fotovoltaik (FV) alanında bir çok araştırmacı ve bilim adamı
tarafından çalışılan önemli bir araştırma konusudur. Silisyum  heteroeklem güneş hücre teknolojisi, yüksek enerji
dönüşüm verimliliği ve rekabetçi seri üretim maliyeti ile kendisini ispat etmiş
ve yeni geliştirilen teknolojileri bünyesine entegre edebilme kabiliyeti ile
potansiyelini ortaya koymuş bir güneş hücresi teknolojisidir Bu çalışmada,
silisyum heteroeklem güneş hücrelerinin üretim aşamaları ve karakterizasyonu
detaylı bir şekilde çalışılmıştır. a-Si:H incefilmlerin kalınlık, bant aralığı
ve taşıyıcı yaşam süresi gibi özellikleri elipsometre, profilometre ve taşıyıcı
yaşam süresi cihazı ile araştırılmış ve optimizasyonu yapılmıştır. 6 inç n-tipi
c-Si alttaş üzerine büyütülen katkısız ince film tabakalı heteroeklem
(heterojunction with intrinsic thin-layer, HIT) yapısı ile %19,7 verimli güneş
hücresi üretilmiştir.  

References

  • [1] DE WOLF S., DESCOEUDRES A., HOLMAN Z. C., BALLIF C., “High-efficiency silicon heterojunction solar cells: A review”, Green, 2(1), 7-24, 2012[2] LIU, Y., SUN, Y., LIU, W., YAO, J., “Novel high-efficiency crystalline-silicon-based compound heterojunction solar cells: HCT (heterojunction with compound thin-layer)”, Physical Chemistry Chemical Physics, 16 (29), 15400-15410, 2014[3] PATEL, K., TYAGI, P. K., “Technological advances in a-Si: H/c-Si Heterojunction solar cells”. International Journal of Renewable Energy Research (IJRER), 4 (2), 528-538, 2014[4] TAGUCHI, M., YANO, A., TOHODA, S., MATSUYAMA, K., NAKAMURA, Y., NISHIWAKI, T., FUJİTA, K., MARUYAMA, E., “24.7% record efficiency HIT solar cell on thin silicon wafer”. IEEE Journal of Photovoltaics, 4(1), 96-99, 2014[5] TSUNOMURA, Y., YOSHIMINE, Y., TAGUCHI, M., BABA, T., KINOSHITA, T., KANNO, H., SAKATA, H., MARUYAMA, E., TAKANA, M., “Twenty-two percent efficiency HIT solar cell”. Solar Energy Materials and Solar Cells, 93(6), 670-673, 2009[6] SHOCKLEY, W., & QUEISSER, H. J., “Detailed balance limit of efficiency of p‐n junction solar cells”. Journal of applied physics, 32(3), 510-519, 1961[7] MAKOTO, T., MIKIO, T., TAKAO, M., TORU, S., SHINYA, T., SHOICHI, N., HIROSGI, H., YUKINORI, K., “Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)”. Japanese Journal of Applied Physics, 31(11R), 3518 –3522, 1992[8] TAGUCHI, M., TSUNOMURA, Y., INOUE, H., TAIRA, S., NAKASHIMA, T., BABA, T., SAKATA, H., MARUYAMA, E., “High efficiency HIT solar cell on thin (< 100 μm) silicon wafer”. In Proceedings of the 24th European Photovoltaic Solar Energy Conference 1690–1693, 2009.[9] http://panasonic.net/sanyo/news/2010/12/03-2.pdf, (erişim tarihi 05.02.2019)[10] WANG, Q., PAGE, M., IWANICZKO, E., XU, Y., ROYBAL, L., BAUER, HASOON, F., “Efficient heterojunction solar cells on p-type crystal silicon wafers”. Applied Physics Letters, 96(1), 013507, 2010.[11] LACHENAL, D., ANDRAULT, Y., BAETZNER, D., GUERİN, C., KOBAŞ, M., MENDES, B., BUECHEL, A., “High efficiency silicon heterojunction solar cell activities in Neuchatel, Switzerland”. In 25th European Photovoltaic Solar Energy Conference and Exhibition/5th World Conference on Photovoltaic Energy Conversion, Valencia, Spain, pp: 1272–1275, 2010.[12] STRAHM, B ANDRAULT, Y., BAETZNER, D., GUERİN, C., HOLMES, N., KOBAŞ, M., WAHLI, G., “Progress in silicon hetero-junction solar cell development and scaling for large scale mass production use”, Proc. of the 25th European Photovoltaic Solar Energy Conference and Exhibition and the 5th World Conference on Photovoltaic Energy Conversion, Valencia, Spain, 1286–1289, 2010.[13] FELDMANN, F., BIVOUR, M., REICHEL, C., HERMLE, M., GLUNZ, S., “A passivated rear contact for high-efficiency n-type silicon solar cells enabling high Vocs and FF> 82%”. 28th European Photovoltaic Solar Energy Conference and Exhibition, Fransa, 2013.[14] http://www.kaneka.co.jp/en/service/news/nr201708252/, (erişim tarihi 05.02.2019)[15] http://sunpreme.com/technology-main/, (erişim tarihi 05.02.2019)[16] LIU, J., YAO, Y., XIAO, S. and GU, X., "Review of status developments of high-efficiency crystalline silicon solar cells", Journal of Physics D: Applied Physics 51 (12): 123001, 2018.[17] OHSHITA, Y., KAMIOKA, T. and NAKAMURA, K., "Technology Trend of High Efficiency Crystalline Silicon Solar Cells", AAPPS Bulletin 27 (3), 2-8, 2017.[18] http://www.kaneka.co.jp/wp-kaneka/wp-content/uploads/2017/06/1479120629_101.pdf (erişim tarihi 05.02.2019)[19] https://news.panasonic.com/global/press/data/2016/03/en160302-2/en160302-2.html, (erişim tarihi 05.02.2019) [20] https://www.nrel.gov/pv/assets/pdfs/pv-efficiency-chart.20190103.pdf, (erişim tarihi 05.02.2019)[21] RUCAVADO E., JEANGROS Q., URBAN D. F., Holovský J., REMES Z., DUCHAMP M., LANDUCCI F., Dunin-Borkowski R., KÖRNER W., ELSÄSSER C., HESSLER-WYSER A., MORALES-MASIS M. and BALLIF C., “Enhancing the optoelectronic properties of amorphous zinc-tin oxide by passivation of sub-gap defects: a theoretical and experimental demonstration”, Phys. Rev. B 95, 24, 2017.[22] WERNER J., WALTER A., RUCAVADO E., MOON S.-J., SACCHETTO D., RIENAECKER M., PEIBST R., BRENDEL R., NIQUILLE X., WOLF S. De, LÖPER P., MORALES-MASIS M., NICOLAY S., NIESEN B., BALLIF C., “Zinc Tin Oxide as High-Temperature Stable Recombination Layer for Mesoscopic Perovskite/Silicon Monolithic Tandem Solar Cells”, Appl. Phys. Lett. 109, 2016[23] ALTAN T., Silisyum Hetero-eklem Güneş Hücrelerinde Ön Yüz Metalizasyon Optimizasyonu ve Alternatif Ön Yüz Metalizasyon Yöntemi, Niğde Ömer Halisdemir Üniversitesi Fen Bilimleri Enstitüsü Makine Mühendisliği Ana Bilim Dalı Yüksek Lisans tezi, Türkiye, 2018.
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Details

Primary Language Turkish
Journal Section Others
Authors

Ayşe Seyhan 0000-0001-8090-1404

Publication Date July 31, 2019
Submission Date March 21, 2019
Acceptance Date May 24, 2019
Published in Issue Year 2019 Volume: 8 Issue: 2

Cite

APA Seyhan, A. (2019). YÜKSEK VERİMLİ KRİSTAL SİLİSYUM (c-Si) HETEROEKLEM GÜNEŞ HÜCRELERİ ÜRETİMİ VE KARAKTERİZASYONU. Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi, 8(2), 1307-1314. https://doi.org/10.28948/ngumuh.542803
AMA Seyhan A. YÜKSEK VERİMLİ KRİSTAL SİLİSYUM (c-Si) HETEROEKLEM GÜNEŞ HÜCRELERİ ÜRETİMİ VE KARAKTERİZASYONU. NOHU J. Eng. Sci. July 2019;8(2):1307-1314. doi:10.28948/ngumuh.542803
Chicago Seyhan, Ayşe. “YÜKSEK VERİMLİ KRİSTAL SİLİSYUM (c-Si) HETEROEKLEM GÜNEŞ HÜCRELERİ ÜRETİMİ VE KARAKTERİZASYONU”. Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi 8, no. 2 (July 2019): 1307-14. https://doi.org/10.28948/ngumuh.542803.
EndNote Seyhan A (July 1, 2019) YÜKSEK VERİMLİ KRİSTAL SİLİSYUM (c-Si) HETEROEKLEM GÜNEŞ HÜCRELERİ ÜRETİMİ VE KARAKTERİZASYONU. Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi 8 2 1307–1314.
IEEE A. Seyhan, “YÜKSEK VERİMLİ KRİSTAL SİLİSYUM (c-Si) HETEROEKLEM GÜNEŞ HÜCRELERİ ÜRETİMİ VE KARAKTERİZASYONU”, NOHU J. Eng. Sci., vol. 8, no. 2, pp. 1307–1314, 2019, doi: 10.28948/ngumuh.542803.
ISNAD Seyhan, Ayşe. “YÜKSEK VERİMLİ KRİSTAL SİLİSYUM (c-Si) HETEROEKLEM GÜNEŞ HÜCRELERİ ÜRETİMİ VE KARAKTERİZASYONU”. Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi 8/2 (July 2019), 1307-1314. https://doi.org/10.28948/ngumuh.542803.
JAMA Seyhan A. YÜKSEK VERİMLİ KRİSTAL SİLİSYUM (c-Si) HETEROEKLEM GÜNEŞ HÜCRELERİ ÜRETİMİ VE KARAKTERİZASYONU. NOHU J. Eng. Sci. 2019;8:1307–1314.
MLA Seyhan, Ayşe. “YÜKSEK VERİMLİ KRİSTAL SİLİSYUM (c-Si) HETEROEKLEM GÜNEŞ HÜCRELERİ ÜRETİMİ VE KARAKTERİZASYONU”. Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi, vol. 8, no. 2, 2019, pp. 1307-14, doi:10.28948/ngumuh.542803.
Vancouver Seyhan A. YÜKSEK VERİMLİ KRİSTAL SİLİSYUM (c-Si) HETEROEKLEM GÜNEŞ HÜCRELERİ ÜRETİMİ VE KARAKTERİZASYONU. NOHU J. Eng. Sci. 2019;8(2):1307-14.

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