HIGH EFFICENT c-Si HETEROJUNCTION SOLAR CELL FABRICATION AND CHARACTERIZATION

Yıl 2019, Cilt: 8 Sayı: 2, 1307 - 1314, 31.07.2019

Ayşe Seyhan

https://doi.org/10.28948/ngumuh.542803

Öz

   c-Silicon
(c-Si) heterojunction technology consisting of thin amorphous silicon layers on
monocrystalline silicon wafers is an important research topic studied by many
researchers and scientist in the field of photovoltaic in recent years. Silicon
heterojunction solar cell technology is a solar cell technology that has proven
itself with high energy conversion efficiency, competitive industrial
production cost and has the ability to integrate newly developed technologies
into its structure. In this study, the fabrication stages and characterization
of silicon heterojunction solar cells are studied in detail. The a-Si: H thin
film properties such as thickness, bandgap, carrier lifetime of solar cells
were investigated and optimized via ellipsometer, profilometer and carrier
lifetime. A 19,7 % efficient solar cell was fabricated on a 6-inch n-type c-Si wafers
with intrinsic amorphous thin-layer structure (c-Si HIT). 

Anahtar Kelimeler

Heterojunction solar cell, c-Si HIT, a-Si: H thin films, PECVD, PVD

YÜKSEK VERİMLİ KRİSTAL SİLİSYUM (c-Si) HETEROEKLEM GÜNEŞ HÜCRELERİ ÜRETİMİ VE KARAKTERİZASYONU

Öz

   Tek kristalli silisyum (Si) alttaşlar
üzerine ince a-Si tabakalardan oluşan c-silisyum heteroeklem teknolojisi son
yıllarda fotovoltaik (FV) alanında bir çok araştırmacı ve bilim adamı
tarafından çalışılan önemli bir araştırma konusudur. Silisyum  heteroeklem güneş hücre teknolojisi, yüksek enerji
dönüşüm verimliliği ve rekabetçi seri üretim maliyeti ile kendisini ispat etmiş
ve yeni geliştirilen teknolojileri bünyesine entegre edebilme kabiliyeti ile
potansiyelini ortaya koymuş bir güneş hücresi teknolojisidir Bu çalışmada,
silisyum heteroeklem güneş hücrelerinin üretim aşamaları ve karakterizasyonu
detaylı bir şekilde çalışılmıştır. a-Si:H incefilmlerin kalınlık, bant aralığı
ve taşıyıcı yaşam süresi gibi özellikleri elipsometre, profilometre ve taşıyıcı
yaşam süresi cihazı ile araştırılmış ve optimizasyonu yapılmıştır. 6 inç n-tipi
c-Si alttaş üzerine büyütülen katkısız ince film tabakalı heteroeklem
(heterojunction with intrinsic thin-layer, HIT) yapısı ile %19,7 verimli güneş
hücresi üretilmiştir.  

Anahtar Kelimeler

Heteroeklem güneş hücresi, c-Si HIT, a-Si:H ince film, PECVD, PVD

Kaynakça

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