GAMMA RAY EFFECT ON OP-AMP 741 AND TIMER 555 IC

Esra Kendir; Şerafettin Yaltkaya

doi:10.17482/uumfd.1094384

Research Article

Op-Amp 741 ve Zamanlayıcı 555 IC Üzerinde Gama Işını Etkisi

Year 2023, , 193 - 206, 30.04.2023

Esra Kendir , Şerafettin Yaltkaya

https://doi.org/10.17482/uumfd.1094384

Abstract

Ticari olarak kullanılan 555 tekli zamanlayıcı ve 741 işlemsel yükselteç (op-amp), Co-60 kaynağının gama ışını radyasyonu altında incelenmiştir. Işınlama için maksimum toplam dozlar 2 kGy ve 4 kGy kullanılmıştır. 744 Gy gama ışını radyasyonlarında 202 Hz'den 195 Hz'e düşen 555 tekli zamanlayıcı devre frekansında anormal davranış gözlemlenmiştir. 741 op-amp devresinin sonuçlarında, 741 op-amp'in genlik sinyali 4 kGy gama dozunda maksimum -0,054 dB değerini göstermektedir ve yükselme eğimi 4'ten 0,65 V/µs'ye düşmüştür. 555 tekli zamanlayıcının iki pn bağlantısı vardır ve bu diyotlar 555 tekli zamanlayıcının gama radyasyonundan kolayca etkilenmesine neden olmaktadır. Sonuç olarak, entegre devrelerin radyasyon ortamlarındaki direnç sınırlarının belirlenmesi için test edilmesi gerekmektedir.

Keywords

Gama Işını, Op-Amp 741, Zamanlayıcı 555 IC, Yarı İletken Bağlantılar

References

1. Abel, I., Neuner, M., and Graeb, H. (2021). A Hierarchical Performance Equation Library for Basic Op-Amp Design. In IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. doi: 10.1109/TCAD.2021.3101691
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5. Arshak, K., and Korostynska, O. (2004) Thin film pn-junctions based on oxide materials as γ-radiation sensors, Sensors and Actuators A: Physical, 113, 307-11. doi: 10.1016/j.sna.2004.01.026
6. Ashry, H., Soliman, F. A., Swidan, A., El-Ghana, M., and Abdel Rahman, W. (2008). Gamma radiation effects on the electrical parameters of some operational amplifiers. In The Second All African IRPA Regional Radiation Protection Congress. Egypt
7. Assaf, J. (2020) Reducing the ringing oscillation of IC Timer by using gamma rays and neutron radiation, Microelectronics Reliability, 104, 113553. doi: 10.1016/j.microrel.2019.113553
8. Babcock, J. A., Cressler, J. D., Vempati, L. S., Clark, S. D., Jaeger, R. C., and Harame, D. L. (1995) Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's, IEEE Electron Device Letters, 16, 351-53. doi: 10.1109/55.400735
9. Baczuk, R. L. 1994. PSPICE Simulation of Total Dose Effects on Composite and Single Operational Amplifiers, Master's Thesis, Naval Postgraduate School Monterey, California.
10. Baliga, B. J. (2010) Fundamentals of power semiconductor devices Springer Science & Business Media. doi: 10.1007/978-0-387-47314-7
11. Cameron, N. 2021. 'Signal generation with 555 timer IC.' in, Electronics Projects with the ESP8266 and ESP32 (Springer). doi: 10.1007/978-1-4842-6336-5_17
12. Claro, L. H., and Santos, J. A. d. (2009). Effects of gamma radiation on commercial operational amplifiers. In International Nuclear Atlantic Conference. Rio de Janeiro, Brazil.
13. Dewan, N., Sreenivas, K., and Gupta, V. (2008) Comparative study on TeO2 and TeO3 thin film for γ-ray sensor application, Sensors and Actuators A: Physical, 147, 115-20. doi: 10.1016/j.sna.2008.04.011
14. Dvornikov, O., Dyatlov, V., Prokopenko, N., and Chekhovskii, V. (2017) Configurable structured array for fabrication of radiation-hardened analog interfaces, Journal of Communications Technology and Electronics, 62, 1193-99. doi: 10.1134/S1064226917090078
15. Dvornikov, O. V., Dziatlau, V. L., Tchekhovski, V. A., Prokopenko, N. N., and Bugakova, A. V. (2018). BiJFet Array Chip MH2XA030—a Design Tool for Radiation-Hardened and Cryogenic Analog Integrated Circuits. In 2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech), 13-17. IEEE. doi: 10.1109/EExPolytech.2018.8564415
16. Elbuluk, M. E., Hammoud, A., and Patterson, R. (2009). Wide Range Temperature Sensors for Harsh Environments. In 2009 IEEE Industry Applications Society Annual Meeting, 1-6. IEEE. doi: 10.1109/IAS.2009.5324840
17. Ferikoğlu, A., and Topal, T. (2010) INDUCTOR SIMULATION WITH OPERATIONAL DEVICES, Gazi University Journal of Science, 18, 143-51.
18. Gray, P. R., Hurst, P. J., Lewis, S. H., and Meyer, R. G. (2009) Analysis and design of analog integrated circuits John Wiley & Sons. USA.
19. Jung, W. G. (1977) IC timer cookbook HW Sams & Co Inc. USA.
20. Lai, S., Alexiev, D., and Nener, B. (1995) Comparison between deep level defects in GaAsinduced by gamma, 1 MeV electron, and neutron irradiation, Journal of Applied Physics, 78, 3686-90. doi: 10.1063/1.359946
21. Li, X., Xiao, J., Liu, C., Zhao, Z., Geng, H., Lan, M., Yang, D., and He, S. (2010) Ionization damage in NPN transistors caused by lower energy electrons, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 621, 707-12. doi: 10.1016/j.nima.2010.04.068
22. M Fiore, J. (2018). Operational Amplifiers & Linear Integrated Circuits: Theory and Application/3E. Dissidents, New York.
23. McPherson, M., Jones, B., and Sloan, T. (1997) Effects of radiation damage in silicon p-i-n photodiodes, Semiconductor science and technology, 12, 1187. doi: 10.1088/0268- 1242/12/10/003
24. Montagner, X., Briand, R., Fouillat, P., Schrimpf, R., Touboui, A., Galloway, K., Calvet, M., and Calvel, P. (1998) Dose-rate and irradiation temperature dependence of BJT SPICE model rad-parameters, IEEE Transactions on Nuclear Science, 45, 1431-37. doi: 10.1109/RADECS.1997.698893
25. Pien, C. F., Amir, H. F., Salleh, S., and Muhammad, A. (2010) Effects of total ionizing dose on bipolar junction transistor, American Journal of Applied Sciences, 7, 807. doi: 10.3844/ajassp.2010.807.810
26. Roberge, J. K. (1975) Operational amplifiers: theory and practice, John Wiley&Sons Inc. New York.
27. Schrimpf, R. D., and Fleetwood, D. M. (2004) Radiation effects and soft errors in integrated circuits and electronic devices, World Scientific. doi: 10.1142/5607
28. Sedra, A. S., Smith, K. C., Carusone, T. C., and Gaudet, V. (2004) Microelectronic circuits, Oxford University Press, New York.
29. Sharma, M. C. (1978) 555 Timer and Its Applications, Business Promotion Puplications. Delhi.
30. Soliman, F. (1993) Operational amplifier type 741: Characterization and radiation effects, Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, 42, 15-32. doi: 10.1501/commua1-2_0000000051
31. Terrell, D. (1996) Op Amps: Design, Application, and Troubleshooting, Newnes. doi: 10.1016/B978-0-7506-9702-6.X5000-8
32. Um, M., Ro, D., Chang, I. J., and Lee, H.-M. (2020). A Radiation-Hardened ReadoutIntegrated Circuits for Sensor Systems. In 2020 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia), 1-4. IEEE. doi: 10.1109/ICCEAsia49877.2020.9276762
33. Van Lint, V. A. (1987) The physics of radiation damage in particle detectors, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 253, 453-59. doi: 10.1016/0168-9002(87)90532-8
34. Walldén, J. (2014). Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques. Master's Thesis, Linköpings university, Department of Electrical Engineering, Sweden.

GAMMA RAY EFFECT ON OP-AMP 741 AND TIMER 555 IC

Year 2023, , 193 - 206, 30.04.2023

Esra Kendir , Şerafettin Yaltkaya

https://doi.org/10.17482/uumfd.1094384

Abstract

The commercial used the 555 single timer and the 741 operational amplifiers (op-amp) were investigated under the gamma-ray radiation of the Co-60 source. The maximum total doses were used 2 kGy and 4 kGy to irradiate. The abnormal behavior in the 555 single timer circuit frequency was observed, which decreased from 202 to 195 Hz at 744 Gy gamma-ray radiations. In the results of 741 opamp circuit, the amplitude signal of the 741 op-amp shows a maximum value of -0.054 dB at 4 kGy gamma dose and its slew rate decreases from 4 to 0.65 V/µs. The 555 single timer has two pn junctions and these cause that the 555 single timer is easily affected by the gamma radiation. Consequently, the integrated circuits must be tested to determine their resistance limits in the radiation environments.

Keywords

Gamma Ray, Op-Amp 741, Timer 555 IC, Semiconducting Junctions

References

1. Abel, I., Neuner, M., and Graeb, H. (2021). A Hierarchical Performance Equation Library for Basic Op-Amp Design. In IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. doi: 10.1109/TCAD.2021.3101691
2. Abhirami, K., Sathyamoorthy, R., and Asokan, K. (2013) Structural, optical and electrical properties of gamma irradiated SnO thin films, Radiation physics and chemistry, 91, 35-39. doi:10.1016/j.radphyschem.2013.05.030
3. Ahn, S. H., Sun, G. M., and Baek, H. 2018. Experimental study of gamma irradiation on bipolar junction transistor. Proceedings of the KNS 2018 Spring Meeting, (p. v). Korea, Republic of: KNS.
4. Arshak, K., and Korostynska, O. (2004) Thick film oxide diode structures for personal dosimetry application, Sensors and Actuators A: Physical, 113, 319-23. doi: 10.1016/j.sna.2004.01.050
5. Arshak, K., and Korostynska, O. (2004) Thin film pn-junctions based on oxide materials as γ-radiation sensors, Sensors and Actuators A: Physical, 113, 307-11. doi: 10.1016/j.sna.2004.01.026
6. Ashry, H., Soliman, F. A., Swidan, A., El-Ghana, M., and Abdel Rahman, W. (2008). Gamma radiation effects on the electrical parameters of some operational amplifiers. In The Second All African IRPA Regional Radiation Protection Congress. Egypt
7. Assaf, J. (2020) Reducing the ringing oscillation of IC Timer by using gamma rays and neutron radiation, Microelectronics Reliability, 104, 113553. doi: 10.1016/j.microrel.2019.113553
8. Babcock, J. A., Cressler, J. D., Vempati, L. S., Clark, S. D., Jaeger, R. C., and Harame, D. L. (1995) Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's, IEEE Electron Device Letters, 16, 351-53. doi: 10.1109/55.400735
9. Baczuk, R. L. 1994. PSPICE Simulation of Total Dose Effects on Composite and Single Operational Amplifiers, Master's Thesis, Naval Postgraduate School Monterey, California.
10. Baliga, B. J. (2010) Fundamentals of power semiconductor devices Springer Science & Business Media. doi: 10.1007/978-0-387-47314-7
11. Cameron, N. 2021. 'Signal generation with 555 timer IC.' in, Electronics Projects with the ESP8266 and ESP32 (Springer). doi: 10.1007/978-1-4842-6336-5_17
12. Claro, L. H., and Santos, J. A. d. (2009). Effects of gamma radiation on commercial operational amplifiers. In International Nuclear Atlantic Conference. Rio de Janeiro, Brazil.
13. Dewan, N., Sreenivas, K., and Gupta, V. (2008) Comparative study on TeO2 and TeO3 thin film for γ-ray sensor application, Sensors and Actuators A: Physical, 147, 115-20. doi: 10.1016/j.sna.2008.04.011
14. Dvornikov, O., Dyatlov, V., Prokopenko, N., and Chekhovskii, V. (2017) Configurable structured array for fabrication of radiation-hardened analog interfaces, Journal of Communications Technology and Electronics, 62, 1193-99. doi: 10.1134/S1064226917090078
15. Dvornikov, O. V., Dziatlau, V. L., Tchekhovski, V. A., Prokopenko, N. N., and Bugakova, A. V. (2018). BiJFet Array Chip MH2XA030—a Design Tool for Radiation-Hardened and Cryogenic Analog Integrated Circuits. In 2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech), 13-17. IEEE. doi: 10.1109/EExPolytech.2018.8564415
16. Elbuluk, M. E., Hammoud, A., and Patterson, R. (2009). Wide Range Temperature Sensors for Harsh Environments. In 2009 IEEE Industry Applications Society Annual Meeting, 1-6. IEEE. doi: 10.1109/IAS.2009.5324840
17. Ferikoğlu, A., and Topal, T. (2010) INDUCTOR SIMULATION WITH OPERATIONAL DEVICES, Gazi University Journal of Science, 18, 143-51.
18. Gray, P. R., Hurst, P. J., Lewis, S. H., and Meyer, R. G. (2009) Analysis and design of analog integrated circuits John Wiley & Sons. USA.
19. Jung, W. G. (1977) IC timer cookbook HW Sams & Co Inc. USA.
20. Lai, S., Alexiev, D., and Nener, B. (1995) Comparison between deep level defects in GaAsinduced by gamma, 1 MeV electron, and neutron irradiation, Journal of Applied Physics, 78, 3686-90. doi: 10.1063/1.359946
21. Li, X., Xiao, J., Liu, C., Zhao, Z., Geng, H., Lan, M., Yang, D., and He, S. (2010) Ionization damage in NPN transistors caused by lower energy electrons, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 621, 707-12. doi: 10.1016/j.nima.2010.04.068
22. M Fiore, J. (2018). Operational Amplifiers & Linear Integrated Circuits: Theory and Application/3E. Dissidents, New York.
23. McPherson, M., Jones, B., and Sloan, T. (1997) Effects of radiation damage in silicon p-i-n photodiodes, Semiconductor science and technology, 12, 1187. doi: 10.1088/0268- 1242/12/10/003
24. Montagner, X., Briand, R., Fouillat, P., Schrimpf, R., Touboui, A., Galloway, K., Calvet, M., and Calvel, P. (1998) Dose-rate and irradiation temperature dependence of BJT SPICE model rad-parameters, IEEE Transactions on Nuclear Science, 45, 1431-37. doi: 10.1109/RADECS.1997.698893
25. Pien, C. F., Amir, H. F., Salleh, S., and Muhammad, A. (2010) Effects of total ionizing dose on bipolar junction transistor, American Journal of Applied Sciences, 7, 807. doi: 10.3844/ajassp.2010.807.810
26. Roberge, J. K. (1975) Operational amplifiers: theory and practice, John Wiley&Sons Inc. New York.
27. Schrimpf, R. D., and Fleetwood, D. M. (2004) Radiation effects and soft errors in integrated circuits and electronic devices, World Scientific. doi: 10.1142/5607
28. Sedra, A. S., Smith, K. C., Carusone, T. C., and Gaudet, V. (2004) Microelectronic circuits, Oxford University Press, New York.
29. Sharma, M. C. (1978) 555 Timer and Its Applications, Business Promotion Puplications. Delhi.
30. Soliman, F. (1993) Operational amplifier type 741: Characterization and radiation effects, Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, 42, 15-32. doi: 10.1501/commua1-2_0000000051
31. Terrell, D. (1996) Op Amps: Design, Application, and Troubleshooting, Newnes. doi: 10.1016/B978-0-7506-9702-6.X5000-8
32. Um, M., Ro, D., Chang, I. J., and Lee, H.-M. (2020). A Radiation-Hardened ReadoutIntegrated Circuits for Sensor Systems. In 2020 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia), 1-4. IEEE. doi: 10.1109/ICCEAsia49877.2020.9276762
33. Van Lint, V. A. (1987) The physics of radiation damage in particle detectors, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 253, 453-59. doi: 10.1016/0168-9002(87)90532-8
34. Walldén, J. (2014). Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques. Master's Thesis, Linköpings university, Department of Electrical Engineering, Sweden.

There are 34 citations in total.

Details

Primary Language	English
Subjects	Electrical Engineering, Nuclear Engineering
Journal Section	Research Articles
Authors	Esra Kendir 0000-0002-6728-5640 Şerafettin Yaltkaya This is me 0000-0002-6840-8200
Publication Date	April 30, 2023
Submission Date	March 31, 2022
Acceptance Date	March 30, 2023
Published in Issue	Year 2023

Cite

APA	Kendir, E., & Yaltkaya, Ş. (2023). GAMMA RAY EFFECT ON OP-AMP 741 AND TIMER 555 IC. Uludağ Üniversitesi Mühendislik Fakültesi Dergisi, 28(1), 193-206. https://doi.org/10.17482/uumfd.1094384
AMA	Kendir E, Yaltkaya Ş. GAMMA RAY EFFECT ON OP-AMP 741 AND TIMER 555 IC. UUJFE. April 2023;28(1):193-206. doi:10.17482/uumfd.1094384
Chicago	Kendir, Esra, and Şerafettin Yaltkaya. “GAMMA RAY EFFECT ON OP-AMP 741 AND TIMER 555 IC”. Uludağ Üniversitesi Mühendislik Fakültesi Dergisi 28, no. 1 (April 2023): 193-206. https://doi.org/10.17482/uumfd.1094384.
EndNote	Kendir E, Yaltkaya Ş (April 1, 2023) GAMMA RAY EFFECT ON OP-AMP 741 AND TIMER 555 IC. Uludağ Üniversitesi Mühendislik Fakültesi Dergisi 28 1 193–206.
IEEE	E. Kendir and Ş. Yaltkaya, “GAMMA RAY EFFECT ON OP-AMP 741 AND TIMER 555 IC”, UUJFE, vol. 28, no. 1, pp. 193–206, 2023, doi: 10.17482/uumfd.1094384.
ISNAD	Kendir, Esra - Yaltkaya, Şerafettin. “GAMMA RAY EFFECT ON OP-AMP 741 AND TIMER 555 IC”. Uludağ Üniversitesi Mühendislik Fakültesi Dergisi 28/1 (April 2023), 193-206. https://doi.org/10.17482/uumfd.1094384.
JAMA	Kendir E, Yaltkaya Ş. GAMMA RAY EFFECT ON OP-AMP 741 AND TIMER 555 IC. UUJFE. 2023;28:193–206.
MLA	Kendir, Esra and Şerafettin Yaltkaya. “GAMMA RAY EFFECT ON OP-AMP 741 AND TIMER 555 IC”. Uludağ Üniversitesi Mühendislik Fakültesi Dergisi, vol. 28, no. 1, 2023, pp. 193-06, doi:10.17482/uumfd.1094384.
Vancouver	Kendir E, Yaltkaya Ş. GAMMA RAY EFFECT ON OP-AMP 741 AND TIMER 555 IC. UUJFE. 2023;28(1):193-206.

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