Abstract
References
- 1. Cheung, S.K., Cheung, N.W. (1986) Extraction of Schottky diode parameters from forward current voltage characteristics, Applied Physics Letters, 49, 85-87 doi.org/10.1063/1.97359
- 2. Cullity, B.D. (1978) Elements of X-Ray Diffraction, Addison-Wesley, Reading, MA
- 3. Gonzalez, A.P.P., Lora, H.G.C., Carreno, L.D.L., Martinez, H.M., Salcedo, N.J.T. (2014) Physical properties of ZnSe thin films deposited on glass and silicon substrates, Journal of Physics and Chemistry of Solids, 75, 713-725. doi:10.1016/j.jpcs.2014.01.012
- 4. Güzeldir, B., Sağlam, M., Ateş, A. (2010) Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au–Sb structure fabricated using SILAR method as a function of temperature, Journal of Alloys and Compounds, 506, 388-394. doi:10.1016/j.jallcom.2010.07.013
- 5. Milnes, A.G., Feucht, D. L. (1972) Heterojunctions and Metal- Semiconductor Junctions, Academic Press, New York and London.
- 6. Rhoderick, E.H., Williams, R.H. (1988) Metal-Semiconductor Contacts, 2.nd eddition, Oxford, London
- 7. Orosel, D., Leynaud, O., Balog, P., Jansen, M. (2004) Pressure–temperature phase diagram of SeO2. Characterization of new phases, Journal of Solid State Chemistry, 177, 1631–1638, doi:10.1016/j.jssc.2003.12.028
- 8. Park, G.D., Lee, J.H., Kang, Y.C. (2016) Superior Na-ion storage properties of high aspect ratio SnSe nanoplates prepared by a spray pyrolysis process, Nanoscale, 8, 11889-11896, doi:10.1039/C6NR01152G
- 9. Salih, A.T., Najim, A.A., Muhi, M.A.H., Gbashi, K.R. (2017) Single-material multilayer ZnS as anti-reflective coating for solar cell applications, Optics Communications, 388, 84-89 doi:10.1016/j.optcom.2016.12.035
- 10. Sze, S.M. (1981) Physics of Semiconductor Devices, John Wiley & Sons, New York
- 11. Yokoyama, M., Chen, N.T., Ueng, H.Y. (2000) Growth and characterization of ZnSe on Si by atomic layer epitaxy, Journal of Crystal Growth, 212, 97-102 doi:10.1016/S0022-0248(00)00004-X
- 12. Yudar, H.H., Pat, S., Korkmaz, Ş., Özen, S., Şenay, V. (2017) Zn/ZnSe thin films deposition by RF magnetron sputtering, Journal of Materials Science: Materials in Electronics, 28, 2833-2837 doi:10.1007/s10854-016-5866-6
- 13. Kaplan, H.K., Akay, S.K., Ahmetoğlu, M. (2018) Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method, Superlattices and Microstructures, 120, 402-409 doi:10.1016/j.spmi.2018.05.055
Abstract
ZnSe/Si
Hetero eklem yapı, n-tipi silisyum (Si) alttaş üzerine çinko selenit (ZnSe)
ince filmin termal buharlaştırma tekniği kullanılarak kaplanmasıyla
üretilmiştir. Üretilen filmin yapısal, elektriksel ve optik özellikleri, x-ışınları
kırınımı (XRD), taramalı elektron mikroskobu (SEM) ve UV-vis spektrofotometre yardımıyla
incelenmiştir. XRD ve SEM analizleri ZnSe ince filmin Si alttaş üzerini
kaplayacak şekilde ve poli kristal yapıda olduğunu göstermektedir. ZnSe ince
filmin yüzeyi üzerinde 5 farklı bölgede gerçekleştirilen EDX analizine göre
yapının %51 Zn ve %49 Se elemental bileşim dağılımına sahip olduğu sonucuna varılmıştır. ZnSe ince film kalınlığı 200 nm olarak
ölçüldü. Yasak enerji bant aralığı yaklaşıkça 2,86 eV olarak hesaplandı. Üretilen
yapının elektriksel parametreleri hem standart yöntem hem de Cheung-Cheung
yöntemiyle elde edildi. Bariyer yüksekliği 0,74 eV, idealite faktörü 1,26 ve
seri direnç 5,1 kΩ olarak belirlendi. Ayrıca, hetero eklem yapının dalga boyuna
bağlı foto tepki ölçümleri gerçekleştirildi.
References
- 1. Cheung, S.K., Cheung, N.W. (1986) Extraction of Schottky diode parameters from forward current voltage characteristics, Applied Physics Letters, 49, 85-87 doi.org/10.1063/1.97359
- 2. Cullity, B.D. (1978) Elements of X-Ray Diffraction, Addison-Wesley, Reading, MA
- 3. Gonzalez, A.P.P., Lora, H.G.C., Carreno, L.D.L., Martinez, H.M., Salcedo, N.J.T. (2014) Physical properties of ZnSe thin films deposited on glass and silicon substrates, Journal of Physics and Chemistry of Solids, 75, 713-725. doi:10.1016/j.jpcs.2014.01.012
- 4. Güzeldir, B., Sağlam, M., Ateş, A. (2010) Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au–Sb structure fabricated using SILAR method as a function of temperature, Journal of Alloys and Compounds, 506, 388-394. doi:10.1016/j.jallcom.2010.07.013
- 5. Milnes, A.G., Feucht, D. L. (1972) Heterojunctions and Metal- Semiconductor Junctions, Academic Press, New York and London.
- 6. Rhoderick, E.H., Williams, R.H. (1988) Metal-Semiconductor Contacts, 2.nd eddition, Oxford, London
- 7. Orosel, D., Leynaud, O., Balog, P., Jansen, M. (2004) Pressure–temperature phase diagram of SeO2. Characterization of new phases, Journal of Solid State Chemistry, 177, 1631–1638, doi:10.1016/j.jssc.2003.12.028
- 8. Park, G.D., Lee, J.H., Kang, Y.C. (2016) Superior Na-ion storage properties of high aspect ratio SnSe nanoplates prepared by a spray pyrolysis process, Nanoscale, 8, 11889-11896, doi:10.1039/C6NR01152G
- 9. Salih, A.T., Najim, A.A., Muhi, M.A.H., Gbashi, K.R. (2017) Single-material multilayer ZnS as anti-reflective coating for solar cell applications, Optics Communications, 388, 84-89 doi:10.1016/j.optcom.2016.12.035
- 10. Sze, S.M. (1981) Physics of Semiconductor Devices, John Wiley & Sons, New York
- 11. Yokoyama, M., Chen, N.T., Ueng, H.Y. (2000) Growth and characterization of ZnSe on Si by atomic layer epitaxy, Journal of Crystal Growth, 212, 97-102 doi:10.1016/S0022-0248(00)00004-X
- 12. Yudar, H.H., Pat, S., Korkmaz, Ş., Özen, S., Şenay, V. (2017) Zn/ZnSe thin films deposition by RF magnetron sputtering, Journal of Materials Science: Materials in Electronics, 28, 2833-2837 doi:10.1007/s10854-016-5866-6
- 13. Kaplan, H.K., Akay, S.K., Ahmetoğlu, M. (2018) Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method, Superlattices and Microstructures, 120, 402-409 doi:10.1016/j.spmi.2018.05.055
Details
| Primary Language | Turkish |
|---|---|
| Subjects | Engineering |
| Journal Section | Research Articles |
| Authors | |
| Publication Date | April 30, 2019 |
| Submission Date | January 18, 2018 |
| Acceptance Date | March 18, 2019 |
| Published in Issue | Year 2019 Volume: 24 Issue: 1 |
Cite
Cited By
Ultrasonik Sprey Piroliz ile Üretilen ZnO İnce Filmlerin Alttaş Sıcaklıklarının Yapısal ve Optik Özelliklerine Etkisi
Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi
Murat KOÇ
https://doi.org/10.29233/sdufeffd.911477
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