THE EFFECT OF ANNEALING TEMPERATURE ON AL DOPED FE2O3 THIN FILMS GROWN BY SPUTTERING TECHNIQUE

Year 2021, Volume: 1 Issue: 1, 8 - 10, 30.12.2021

Erdal Turgut

Abstract

In this study, the structural and optical properties of the aluminum doped F2O3 thin film were investigated. XRD analyzes and absorption measurements were taken before and after annealing of Fe2O3:Al film grown by FR Magnetron Sputtering method. The band gap energy ranges of the samples we obtained are about 1.87 eV before annealing, and XRD peaks were not observed in XRD analyses. As a result of the annealing of the same Al-doped samples at 560 degrees for 1 hour, the band gap was measured as approximately 2.18 eV, and at the same time, it was observed that in the XRD analyzes of the samples, peaks of various intensities occurred, with the most intense peak at 33.47 degrees.

Keywords

Magnetron Sputtering, Al, Fe2O3

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