Ti/ p-Si Schottky Diyot Parametrelerinin Belirlenmesi için I – V Yöntemlerinin Karşılaştırılması

Year 2022, , 158 - 167, 25.04.2022

Hatice Asıl Uğurlu

https://doi.org/10.53433/yyufbed.1058643

Cited By: 1

Abstract

Ti/p-Si Schottky diyotun elektriksel özellikleri 80 K- 300 K sıcaklık aralığında ve 20 K’lik adımlarla sıcaklığın bir fonksiyonu olarak incelenmiştir. İdealite faktörü (n), engel yüksekliği (Фb) ve seri direnç (Rs) gibi temel diyot parametreleri akım-gerilim (I-V) karakteristiği özelliklerinden faydalanarak geleneksel I-V yöntemi, Norde yöntemi ve Cheung fonksiyonlarından hesaplanmıştır. 300 K sıcaklığında engel yüksekliği değerleri I-V, Cheung ve Norde yöntemlerinden sırasıyla 0.738 eV, 0.658 eV ve 0.782 eV olarak bulunmuştur. İdealite faktörü ise I-V yöntemde 1.43 (300 K) ve Cheung yönteminde 3.33 (300 K) olarak hesaplanmıştır. 80 K- 300 K sıcaklık aralığında farklı yöntemlerden hesaplanan parametrelerin değerleri birbiriyle kıyaslanmıştır. Artan sıcaklık ile idealite faktörünün azalması ve engel yüksekliğinin artması, diyot parametrelerinin sıcaklığa güçlü bir şekilde bağlı olduğunu göstermektedir.

Keywords

Schottky diyot, Engel yüksekliği, Norde fonksiyonu, Cheung- Cheung fonksiyonları, I-V yöntem, Sıcaklık bağlılık

Comparison of I – V Methods for Determination of Ti/ p-Si Schottky Diode Parameters

Abstract

The electrical properties of the Ti/p-Si Schottky diode were investigated as a function of temperature within the temperature interval of 80 K-300 K and in 20 K steps. Fundamental diode parameters such as ideality factor (n), barrier height (Фb) and series resistance (Rs) were calculated making use of the conventional I-V method, the Norde method and Cheung functions by utilizing the current-voltage (I-V) characteristics. The barrier height values at 300 K temperature were found to be 0.738 eV, 0.658 eV and 0.782 eV from I-V, Cheung and Norde methods, respectively. The ideality factor was calculated as 1.43 (300 K) in the I-V method and 3.33 (300 K) in the Cheung method. The values of the parameters calculated from different methods in the temperature range of 80 K- 300 K were compared with each other. The decrease in ideality factor and increase in barrier height with increasing temperature show that diode parameters are strongly dependent on temperature

Keywords

Schottky diode, Barrier height, Norde function, Cheung-Cheung functions, I-V method, Temperature dependence

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