Ti/ p-Si Schottky Diyot Parametrelerinin Belirlenmesi için I – V Yöntemlerinin Karşılaştırılması

Year 2022, Volume: 27 Issue: 1, 158 - 167, 25.04.2022

Hatice Asıl Uğurlu

https://doi.org/10.53433/yyufbed.1058643

Cited By: 1

Abstract

Ti/p-Si Schottky diyotun elektriksel özellikleri 80 K- 300 K sıcaklık aralığında ve 20 K’lik adımlarla sıcaklığın bir fonksiyonu olarak incelenmiştir. İdealite faktörü (n), engel yüksekliği (Фb) ve seri direnç (Rs) gibi temel diyot parametreleri akım-gerilim (I-V) karakteristiği özelliklerinden faydalanarak geleneksel I-V yöntemi, Norde yöntemi ve Cheung fonksiyonlarından hesaplanmıştır. 300 K sıcaklığında engel yüksekliği değerleri I-V, Cheung ve Norde yöntemlerinden sırasıyla 0.738 eV, 0.658 eV ve 0.782 eV olarak bulunmuştur. İdealite faktörü ise I-V yöntemde 1.43 (300 K) ve Cheung yönteminde 3.33 (300 K) olarak hesaplanmıştır. 80 K- 300 K sıcaklık aralığında farklı yöntemlerden hesaplanan parametrelerin değerleri birbiriyle kıyaslanmıştır. Artan sıcaklık ile idealite faktörünün azalması ve engel yüksekliğinin artması, diyot parametrelerinin sıcaklığa güçlü bir şekilde bağlı olduğunu göstermektedir.

Keywords

Schottky diyot, Engel yüksekliği, Norde fonksiyonu, Cheung- Cheung fonksiyonları, I-V yöntem, Sıcaklık bağlılık

Comparison of I – V Methods for Determination of Ti/ p-Si Schottky Diode Parameters

Abstract

The electrical properties of the Ti/p-Si Schottky diode were investigated as a function of temperature within the temperature interval of 80 K-300 K and in 20 K steps. Fundamental diode parameters such as ideality factor (n), barrier height (Фb) and series resistance (Rs) were calculated making use of the conventional I-V method, the Norde method and Cheung functions by utilizing the current-voltage (I-V) characteristics. The barrier height values at 300 K temperature were found to be 0.738 eV, 0.658 eV and 0.782 eV from I-V, Cheung and Norde methods, respectively. The ideality factor was calculated as 1.43 (300 K) in the I-V method and 3.33 (300 K) in the Cheung method. The values of the parameters calculated from different methods in the temperature range of 80 K- 300 K were compared with each other. The decrease in ideality factor and increase in barrier height with increasing temperature show that diode parameters are strongly dependent on temperature

Keywords

Schottky diode, Barrier height, Norde function, Cheung-Cheung functions, I-V method, Temperature dependence

References

• Aldemir, D. A., Kökçe, A., & Özdemir, A. F. (2017). The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range. Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 21(6), 1286-1292. doi: 10.16984/saufenbilder.279996
• Asıl, H., Çınar, K., Gür, E., Coşkun, C., & Tüzemen, S. (2013). Temperature dependent current-voltage characteristics of electrodeposited p-ZnO/n-Si heterojuntion. International Journal of Physical Sciences, 8(10), 371-379. doi: 10.5897/IJPS2013.3851
• Asıl Uğurlu, H., Çınar Demir, K., & Coşkun, C. (2021). The effect of thermal annealing on Ti/p-Si Schottky diodes. Journal of Materials Science: Materials in Electronics, 32, 15343–15351. doi: 10.1007/s10854-021-06084-1
• Aydın, M. E., Güllü, Ö., & Yıldırım, N. (2008). Temperature dependence of current–voltage characteristics of Sn/p-Si Schottky contacts. Physica B, 403, 131–138. doi: 10.1016/j.physb.2007.08.089
• Aydoğan, Ş., Sağlam, M., & Türüt, A. (2005). On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature. Applied Surface Science, 250, 43–49. doi: 10.1016/j.apsusc.2004.12.020
• Aydoğan, Ş., Sağlam, M., & Türüt, A. (2008). Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures. Microelectronic Engineering, 85, 278-283. doi: 10.1016/j.mee.2007.06.004
• Aydoğan, Ş., Çınar, K., Asıl, H., Coşkun, C., & Türüt, A. (2009). Electrical characterization of Au/n-ZnO Schottky contacts on n-Si. Journal of Alloys and Compounds, 476, 913-918. doi: 10.1016/j.jallcom.2008.09.131
• Bohlin, K. E. (1986). Generalized Norde plot including determination of the ideality factor. Journal of Applied Physics, 60(3), 1223-1224. doi: 10.1063/1.337372
• Chand, S., & Kumar, J. (1996). Current transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures. Applied Physics A, 63, 171-178. doi: 10.1007/BF01567646
• Chattopadhyay, S., Bera, L. K., Maharatna, K., Chakrabarti, S., Dhar, S., Ray, S. K., & Maiti, C. K. (1997). Schottky diode characteristics of Ti on strained-Si. Solid-State Electronics, 41 (12), 1891-1893. doi:10.1016/S0038-1101(97)00143-3
• Cheung, S. K., & Cheung, N. W. (1986). Extraction of Schottky diode parameters from forward current‐voltage characteristics. Applied Physics Letters, 49, 85-87. doi: 10.1063/1.97359
• Çetin, H., Şahin, B., Ayyıldız, E., & Türüt, A. (2004). The barrier-height inhomogeneity in identically prepared H-terminated Ti/p-Si Schottky barrier diodes. Semiconductor Science and Technology, 19, 1113-1116. doi:10.1088/0268-1242/19/9/007
• Çetin, H., Şahin, B., Ayyıldız, E., & Türüt, A. (2005). Ti/p-Si Schottky barrier diodes with interfacial layer prepared by thermal oxidation. Physica B: Condensed Matter, 364, 133-141. doi: 10.1016/j.physb.2005.04.001
• Çetin, H., & Ayyıldız, E. (2005). Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes. Semiconductor Science and Technology, 20, 625–631. doi: 10.1088/0268-1242/20/6/025
• Dere, A., Tataroğlu, A., Abdullah, G. Al-Sehemi, Eren, H., Soylu, M., Ahmed, A. Al-Ghamdi., & Yakuphanoğlu, F. (2020). A temperature sensor based on Al/p-Si/ CuCdO2/Al diode for low temperature applications. Journal of Electronic Materials, 49, 2317–2325. doi: 10.1007/s11664-020-07989-z
• Demircioğlu, Ö., Karataş, Ş., Yıldırım, N., Bakkaloğlu, Ö. F., & Türüt, A. (2011). Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si. Journal of Alloys and Compounds, 509, 6433–6439. doi: 10.1016/j.jallcom.2011.03.082
• Demircioğlu, Ö., Karataş, Ş., Yıldırım, N., & Bakkaloğlu, Ö. F. (2011). Effects of temperature on series resistance determination of electrodeposited Cr/n-Si/Au–Sb Schottky structures. Microelectronic Engineering, 88, 2997–3002. doi: 10.1016/j.mee.2011.04.060
• Doğan, H., & Elagoz, S. (2014). Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes. Physica E: Low-dimensional Systems and Nanostructures, 63, 186-192. doi: 10.1016/j.physe.2014.04.019
• Durmuş, H.¸ Kılıç, H. Ş.¸ Gezgin, S. Y., & Karataş, Ş. (2018). Analysis of current-voltage-temperature and capacitance-voltage-temperature characteristics of Re/n-Si Schottky Contacts. Silicon, 10, 361–369. doi: 10.1007/s12633-016-9456-2
• Göksu, T., Yıldırım, N., Korkut, H., Özdemir, A. F., Türüt, A., & Kökçe, A. (2010). Barrier he-ight temperature coefficient in ideal Ti/n-GaAs Schottky contacts. Microelectronic Engineering, 87, 1781–1784. doi: 10.1016/j.mee.2009.10.012
• Gümüş, A., Türüt, A., & Yalçın, N. (2002). Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs. Journal of Applied Physics, 9 (1), 245-250. doi: 10.1063/1.1424054
• Janardhanam, V., Ashok Kumar, A., Rajagopal Reddy, V., & Narasimha Reddy, P. (2009). Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (1 0 0). Journal of Alloys and Compounds, 485, 467-472. doi: 10.1016/j.jallcom.2009.05.141
• Kumar, A., Kumar, A., Sharma, K. K., & Chand, S. (2019). Analysis of anomalous transport mechanism across the interface of Ag/p-Si Schottky diode in wide temperature range. Superlattices and Microstructures, 128, 373-381. doi: 10.1016/j.spmi.2019.02.014
• Liauh, H. R., Chen, M. C., Chen, J. F., Chen, L. J. (1993). Electrical and microstructural characteristics of Ti contacts on (001)Si. Journal of Applied Physics, 74, 2590, doi:10.1063/1.354672.
• Norde, H. (1979). A modified forward I-V plot for Schottky diodes with high series resistance. Journal of Applied Physics, 50(7), 5052-5053. doi: 10.1063/1.325607
• Oruç, Ç., & Altındal, A. (2018). Comparative study of I–V methods to extract Au/FePc/p-Si Schottky barrier diode parameters. Applied Physics A, 124, 81. doi: 10.1007/s00339-017-1461-9
• Rhoderick, E. H., & Williams, R. H. (1988). Metal-Semiconductor Contacts. Second Edition, Clarendon Press, Oxford.
• Sehkar Reddy, P. R., Janardhanam, V., Shim, K. H., Reddy, V. R., Lee, S. N., Park, S. J., & Choi, C. J. (2020). Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) -Ga2O3 Schottky barrier diode. Vacuum, 171, 109012. doi: 10.1016/j.vacuum.2019.109012