Year 2018, Volume 19, Issue 4, Pages 976 - 981 2018-12-31

INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS

Feridun AY [1]

40 136

Use of focused ion beam (FIB) as a nanostructuring platform for fast prototype device development in the area of photonics has been attracting a considerable interest. In this study, we report a systematic investigation of focused ion beam (FIB) induced Ga+ ion implantation in silicon on insulator (SOI) structures. The local implantation of Ga+ ions during milling was studied for a wide range of ion doses, ranging from about 1014 to 1017 ions/cm2, using X-ray photoelectron spectroscopy (XPS). Ion implantation has been realized on identically sized areas for each dose by varying the FIB parameters such as dwell time and loop number. It was found that the most of the Ga+ is within the first 50 nm of Si. This suggests that it can be possible to potentially reduce optical losses caused by the ion implantation in any optical application. Methods such as thermal annealing and wet or dry chemical etching can result in removal of the 50 nm implanted layer of SOI, as a result removing the layer causing potentially high optical losses.
Focused Ion Beam (FIB), Ga+ ion implantation, SOI, Photonics
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Primary Language en
Subjects Engineering
Journal Section Articles
Authors

Author: Feridun AY

Dates

Publication Date: December 31, 2018

Bibtex @research article { estubtda515791, journal = {Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering}, issn = {2667-4211}, address = {Eskişehir Teknik Üniversitesi}, year = {2018}, volume = {19}, pages = {976 - 981}, doi = {10.18038/aubtda.471568}, title = {INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS}, key = {cite}, author = {AY, Feridun} }
APA AY, F . (2018). INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering, 19 (4), 976-981. DOI: 10.18038/aubtda.471568
MLA AY, F . "INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS". Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 19 (2018): 976-981 <http://dergipark.org.tr/estubtda/issue/42733/515791>
Chicago AY, F . "INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS". Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 19 (2018): 976-981
RIS TY - JOUR T1 - INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS AU - Feridun AY Y1 - 2018 PY - 2018 N1 - doi: 10.18038/aubtda.471568 DO - 10.18038/aubtda.471568 T2 - Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering JF - Journal JO - JOR SP - 976 EP - 981 VL - 19 IS - 4 SN - 2667-4211- M3 - doi: 10.18038/aubtda.471568 UR - https://doi.org/10.18038/aubtda.471568 Y2 - 2018 ER -
EndNote %0 Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS %A Feridun AY %T INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS %D 2018 %J Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering %P 2667-4211- %V 19 %N 4 %R doi: 10.18038/aubtda.471568 %U 10.18038/aubtda.471568
ISNAD AY, Feridun . "INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS". Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 19 / 4 (December 2019): 976-981. https://doi.org/10.18038/aubtda.471568
AMA AY F . INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering. 2018; 19(4): 976-981.
Vancouver AY F . INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering. 2018; 19(4): 981-976.