Amorf Yarıiletken InTe İnce Filminin Üretilmesi ve Karakterizasyonu

Abstract

Bu çalışmada, InTe amorf yarıiletken malzemenin, X ışını difraksiyonu, elektriksel iletkenliği, optik ve dielektrik özellikleri araştırıldı. X-ışını difraksiyon sonuçları InTe numunesinin amorf yapıya sahip olduğunu gösterir. Numunenin elektriksel iletkenliğinin sıcaklığa bağlılığı araştırıldı ve bulunan sonuçlar numunenin bir amorf yarıiletken olduğunu doğrular. InTe numunesi fotoiletkenlik özellik gösterir. Numunenin optik band aralığı ve optik sabitleri geçirgenlik ve yansıma spektrumları kullanılarak hesaplandı. Numunede doğrudan optik geçişler meydana geldi. Numunenin kırılma indisi dispersiyon eğrisi tek osilatör modeline uydu. Numunenin dielektrik özellikleri frekansın ve sıcaklığın bir fonsiyonu olarak araştırıldı. Dielektrik parametrelerin sıcaklık ve frekansla değiştiği bulundu. Elektrik modulus eğrileri dielektrik relaksasyon olayını analiz etmek için kullanıldı.

Keywords

• InTe,Elektriksel İletkenlik,Amorf Yarıiletken,Dielektrik Sabiti

Fabrication and Characterization of Amorphous Semiconductor InTe Thin Film

Abstract

In this study, X-ray diffraction, electrical conductivity, optical and dielectrical properties of the InTe amorphous semiconductor material have been investigated. X-ray diffraction results show that InTe sample has an amorphous structure. Temperature dependence of electrical conductivity of the sample has been investigated and the obtained results confirm that InTe is an amorphous semiconductor. The InTe sample shows photoconductivity behavior. The optical band gap and optical constants of the sample were calculated using transmittance and reflectance spectra. In the sample, the direct optical transitions take place The refractive index dispersion curve of the sample obeys the single oscillator model. The dielectrical properties of the sample have been investigated as a function of frequency and temperature. It was found that the dielectrical parameters were changed with temperature and frequency. The electrical modulus curves were used to analyze the dielectrical relaxation processes.

Keywords

• : InTe,Electrical Conductivity,Amorphous Semiconductour,Dielectric constant

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