Enhanced boost converter with gan based power switches and switched-capacitor

Abstract

To increase the voltage gain of power electronic circuits, several voltage converters have been designed by researchers. Especially, the boost based converters are used by designers for numerous devices and systems because of their reliability. Generally, in these studies, researchers propose to use high frequency transformers, silicon based diodes and inductance based sub-circuits. However, the improvement on new generation power transistors should be considered as an alternative way to provide these goals because of their lower inner resistances, lower switching losses and adoptability for new generation devices. Therefore, in this paper, usage of these kinds of semiconductors to improve the voltage gain performance of traditional boost converter is proposed. With this enhanced design and usage of new semiconductor switches, we obtain approximately 70% more output voltage gain than traditional boost converter. The proposed converter provides significant gain, high scalability in duty cycle vs output voltage usage and portability for weight restricted systems. The enhanced boost based converter is modelled in Simulink to verify the analytical voltage gain equations. Finally, the proposed model is compared with traditional boost converter in term of gain performance.

Keywords

• Boost converters
• GaN based switches
• power electronics

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