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The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure

Yıl 1988, Cilt: 37 , - , 01.01.1988
https://doi.org/10.1501/commua1-2_0000000072

Öz

We here aimed to determined the minority carrier diffusion coefficient of germanium from the capacitance -voltage characteristics of the. Au/Ge /Sn Schottky diode. For the device fab- rication and 10 Ohm-cm resistivity was used. The evaporation of gold and tin metals were per- formed under a vacuum of 10 ’5 Torr. Capacitance-voltage-frequency characteristics were mea- sured at room temperature and liquid nitrogen temperature. We experimentally determined minority carrier diffusion coefficient as 47-57 cm2 /s by meam of the diffusion capacitance con- cept of p /n junction which had been adapted into a Schottky barrier.

Kaynakça

  • Communications, Series A2-A3: Physical Sciences and Engineering
Yıl 1988, Cilt: 37 , - , 01.01.1988
https://doi.org/10.1501/commua1-2_0000000072

Öz

Kaynakça

  • Communications, Series A2-A3: Physical Sciences and Engineering
Toplam 1 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Konular Mühendislik
Bölüm Research Article
Yazarlar

Tülay Serin Bu kişi benim

Yayımlanma Tarihi 1 Ocak 1988
Gönderilme Tarihi 1 Ocak 1988
Yayımlandığı Sayı Yıl 1988 Cilt: 37

Kaynak Göster

APA Serin, T. (1988). The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, 37. https://doi.org/10.1501/commua1-2_0000000072
AMA Serin T. The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. Ocak 1988;37. doi:10.1501/commua1-2_0000000072
Chicago Serin, Tülay. “The Determination of Minority Carrier Diffusion Coefficient from the C-V Characteristics of the Au/Ge/Sn Structure”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 37, Ocak (Ocak 1988). https://doi.org/10.1501/commua1-2_0000000072.
EndNote Serin T (01 Ocak 1988) The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 37
IEEE T. Serin, “The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure”, Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng., c. 37, 1988, doi: 10.1501/commua1-2_0000000072.
ISNAD Serin, Tülay. “The Determination of Minority Carrier Diffusion Coefficient from the C-V Characteristics of the Au/Ge/Sn Structure”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 37 (Ocak 1988). https://doi.org/10.1501/commua1-2_0000000072.
JAMA Serin T. The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1988;37. doi:10.1501/commua1-2_0000000072.
MLA Serin, Tülay. “The Determination of Minority Carrier Diffusion Coefficient from the C-V Characteristics of the Au/Ge/Sn Structure”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, c. 37, 1988, doi:10.1501/commua1-2_0000000072.
Vancouver Serin T. The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1988;37.

Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering

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