BiTeI Kristalinde Spin-Yörünge Yarılmasının Gerinim ile Değişimi

Yıl 2019, , 19 - 25, 12.03.2019

Sümeyra Güler Kılıç , Çetin Kılıç

https://doi.org/10.17798/bitlisfen.458811

Öz

BiTeI kristalinin elektronik bant yapısında, güçlü spin-yörünge
etkileşmesi Rashba tipi spin ayrışmasına yol açmaktadır. Bu nedenle, dar bant
aralıklı bir yarıiletken olan BiTeI potansiyel bir spintronik malzeme olarak ilgi
çekmektedir. Bu makalede, BiTeI’deki Rashba tipi spin yarılmaların gerinim ile
nasıl değiştiği incelenmiştir. Bu amaçla, yoğunluk fonksiyonel teorisi
çerçevesinde kristal yapısı optimizasyonları ve bant yapısı hesaplamaları gerçekleştirilmiştir.
Bu hesaplamaların sonuçları, BiTeI’deki Rashba tipi spin yarılmasının gerinim
ile kontrol edilebileceğini göstermektedir. Bu, BiTeI kristalinde gerinimin
spin-yörünge etkileşimini arttırdığı (kristal sıkıştırıldığında) ya da azalttığı
(kristal genleştiğinde) bulgusu ile açıklanmıştır.

Anahtar Kelimeler

Spintronik yarıiletkenler, BiTeI, Rashba tipi spin yarılması, Spin-yörünge etkileşimi, İlk-prensip hesaplamalar

Kaynakça

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