BiTeI Kristalinde Spin-Yörünge Yarılmasının Gerinim ile Değişimi

Abstract

BiTeI kristalinin elektronik bant yapısında, güçlü spin-yörünge etkileşmesi Rashba tipi spin ayrışmasına yol açmaktadır. Bu nedenle, dar bant aralıklı bir yarıiletken olan BiTeI potansiyel bir spintronik malzeme olarak ilgi çekmektedir. Bu makalede, BiTeI’deki Rashba tipi spin yarılmaların gerinim ile nasıl değiştiği incelenmiştir. Bu amaçla, yoğunluk fonksiyonel teorisi çerçevesinde kristal yapısı optimizasyonları ve bant yapısı hesaplamaları gerçekleştirilmiştir. Bu hesaplamaların sonuçları, BiTeI’deki Rashba tipi spin yarılmasının gerinim ile kontrol edilebileceğini göstermektedir. Bu, BiTeI kristalinde gerinimin spin-yörünge etkileşimini arttırdığı (kristal sıkıştırıldığında) ya da azalttığı (kristal genleştiğinde) bulgusu ile açıklanmıştır.

Keywords

• Spintronik yarıiletkenler,BiTeI,Rashba tipi spin yarılması,Spin-yörünge etkileşimi,İlk-prensip hesaplamalar

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