Polistren kapı yalıtkanı ile pentasen fototransistör imalatı

Yıl 2020, , 1031 - 1039, 26.09.2020

Şerif Rüzgar Müjdat Çağlar

https://doi.org/10.17798/bitlisfen.656800

Öz

Bu çalışmada, polistren kapı dielektrikli üst kontak pentasen tabanlı fototransistör imalatı yapılmıştır. Polistren yalıtkanının ve pentasen aktif tabakanın yüzey morfolojisini analiz etmek için, taramalı elektron mikroskobu (SEM) kullanılmıştır. Pentasen bazlı fototransistörlerin elektriksel karakterizasyonu ve aydınlatmanın çıkış karakteristikleri üzerindeki etkisi araştırılmıştır. Transistörden elde edilen mobilite değeri ve on/off oranı sırasıyla 5×10-3 cm2/V ve ~ 102'dir. Akaç akımının artan aydınlatma yoğunluğuyla birlikte artması, ışığın ek bir terminal olarak görev yaptığını gösterir. Ayrıca, imal edilmiş bu transistör, aydınlatmaya tepki vermesi nedeniyle bir fototransistör olarak görev görür.

Anahtar Kelimeler

Pentasen, Polistren, Fototransistör

The Electrical Properties of Fabricated Pentacene Based Phototransistor with Polystyrene Gate Insulator

Öz

In this study, the fabrication of top contact pentacene based phototransistor having polystyrene gate dielectric has been carried out. To analyze the surface morpholgy of polystyrene insulator and pentacene active layer, scanning electron microscopy (SEM) has been used. The electrical characterization of pentacene based phototransistor and also the effect of illumination on the output characteristics have been investigated. The obtained mobility value and on/off ratio of the transistor are 5×10-3 cm2/Vs and ~102, respectively. The increase of the drain current with increasing illumination intensity indicates that the light acts as an additional terminal. Also, this fabricated device behaves as a phototransistor because of its reaction to the illumination.

Anahtar Kelimeler

pentacene, polystene, phototransistor

Kaynakça

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