Termal buharlaştırma yöntemi ile üretilen n-ZnO/p-Si heteroeklem kontakların elektriksel ve optiksel karakterizasyonu

Yıl 2021, Cilt: 10 Sayı: 3, 902 - 910, 17.09.2021

Abdullah Özkartal

https://doi.org/10.17798/bitlisfen.956341

Öz

Bu çalışmada, n-ZnO ince filmi p-Si yarıiletkeni ve mikroskop camı üzerinde termal buharlaştırma yöntemi ile üretilmiştir. n-ZnO ince filmler, UV-Vis spektroskopisi, X-ışını kırınımı (XRD) ve enerji dağılımlı X-ışını spektroskopisi (EDX) ile incelenmiştir. n-ZnO/p-Si diyotların elektriksel özellikleri karanlıkta ve oda sıcaklığında, akım-voltaj (I-V) ve kapasitans-voltaj (C-V) ölçümleri ile incelenmiştir. Üretilen numunelerin idealite faktörü (n), engel yüksekliği (Фb) ve seri direnci (Rs), I-V ve C-V ölçümlerinden ve Cheung fonksiyonlarından hesaplanmıştır. Ayrıca n-ZnO/p-Si diyotların optiksel özellikleri 100 mW/cm2 ve AM 1.5 aydınlatma altında incelenmiştir.

Anahtar Kelimeler

Fotodiyot, n-ZnO/p-Si heteroeklem, ZnO ince film, termal buharlıştırma

Destekleyen Kurum

Van Yüzüncü Yıl Üniversitesi Bilimsel Araştırma Projeleri Koordinatörlüğü

Proje Numarası

FYL-2018-7203

Teşekkür

Bu çalışma, Van Yüzüncü Yıl Üniversitesi Bilimsel Araştırma Projeleri Koordinatörlüğü tarafından FYL-2018-7203 proje numarası ile finansal olarak desteklenmiştir.

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