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Asimetrik Çift Delta Katkılı GaAs Yapılarında Altbantlar Arası İkinci Derece Doğrusal Olmayan Geçişler

Yıl 2018, Cilt: 39 Sayı: 3, 720 - 727, 30.09.2018

Emine Öztürk

https://doi.org/10.17776/csj.448219

Öz

Bu çalışmada, homojen
bir katkılama dağılım modeli için asimetrik çift delta katkılı kuyularda ikinci
mertebeden harmonik üretim katsayısı araştırılmıştır. Asimetrik çift delta
katkılı kuyulara sahip GaAs yapısının potansiyel profili, alt bant enerji seviyeleri,
dalga fonksiyonları ve yük yoğunlukları gibi elektronik özellikleri,
Schrödinger ve Poisson denklemlerinin kendi içinde tutarlı hesaplamalarıyla
belirlenmiştir. Bu çalışmada kullanılan
parametrelere göre,  katkı konsantrasyonu için alt bantlar arası
gevşeme süresi  olan yapıdaki ikinci
mertebeden harmonik üretim katsayısının pik
değerinin, katkı
konsantrasyonu 5 olan
yapıdaki  süresiyle aynı olduğu görülmektedir. Ayrıca, 1
nm verici dağılımının kalınlığı için,  olan bu harmonik üretim katsayısının pik
değeri, verici dağılım kalınlığı 8 nm için yaklaşık  ile aynı davranışa sahiptir. Alt bantlar arasındaki ikinci derecedeki doğrusal
olmayan geçişlerin yapısal parametrelerine bağımlılığı, foto-dedektörlerin ve
optik modülatörlerin potansiyel değişimleri için oldukça önemlidir. Kuantum
foto-elektronik cihazların gelecekteki araştırmalarında bu yapıların önemli bir
yeri olacaktır.

Anahtar Kelimeler

Delta katkılama öz-uyumluluk ikinci derece harmonic üretim katsayısı lineer olmayan geçişler

Kaynakça

  • [1]. Degani M.H., Electron energy levels in a delta-doped layer in GaAs, Phys. Rev. B 44 (1991) 5580-5584
  • [2]. Ozturk E., Optical intersubband transitions in double Si _-doped GaAs under an applied magnetic field, Superlatt. Microstruct. 46 (2009) 752-759
  • [3]. Gaggero-Sager L.M., Naumis G.G., Munoz-Hernandez M.A., Montiel-Palma V., Self- consistent calculation of transport properties in Si δ-doped GaAs quantum wells as a function of the temperature, Physica B 405 (2010) 4267-4270
  • [4]. Schubert E.F., Fischer A., Ploog K., The delta-doped field-effect transistor, IEEE Trans. Electron Devices 33 (1986) 625-632
  • [5]. Zheng X., Carns T.K., Wang K.L., Wu B., Electron mobility enhancement from coupled wells in delta‐doped GaAs, Appl. Phys. Lett. 62 (1993) 504-506
  • [6]. Hai G.Q., Studart N., Peeters F.M., Electron mobility in two coupled delta layers, Phys. Rev. B 52 (1995) 11273-11276
  • [7]. Chen L.Y., Cheng S.Y., Chen T.P., Chu K.Y., Tsai T.H., Liu Y.C., Liao X.D., Liu W.C., On an InGaP/InGaAs double channel pseudomorphic high electron mobility transistor with graded triple δ-doped sheets, IEEE Trans. Electron Devices, 55 (2008) 3310-3318
  • [8]. Karabulut I., Baskoutas S., Linear and nonlinear optical absorption coefficients and refractive index changes in spherical quantum dots: Effects of impurities, electric field, size, and optical intensity, J. Appl. Phys. 103 (2008) 073512-073516
  • [9]. Ozturk E., Ozdemir Y., Linear and nonlinear intersubband optical absorption coefficient and refractive index change in n-type d-doped GaAs structure, Opt. Commun. 294 (2013) 361-367
  • [10]. Restrepo R.L., Morales A.L., Martinez-Orozco J.C., Baghramyan H.M., Barseghyan M.G., Mora-Ramos M.E., Duque C.A., Impurity-related nonlinear optical properties in delta-doped quantum rings: Electric field effects, Physica B 453 (2014) 140-145
  • [11]. Oubram O., Rodriguez-Vargas I., Martinez-Orozco J. C., Refractive index changes in n-type delta-doped GaAs under hydrostatic pressure, Revista Mexicana de Fisica 60 (2014) 161-167.
  • [12]. Kasapoglu E., Yesilgul U., Ungan F., Sokmen I., Sari H., The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells, Optical Materials 64 (2017) 82-87
  • [13]. Ozturk E., Nonlinear transitions in single, double, and triple δ-doped GaAs structures, Romanian Journal of Physics 62 (2017) 603-612
  • [14]. Tsang L., Chuang S.L., Lee S.M., Second-order nonlinear optical susceptibility of a quantum well with an applied electric field, Phys. Rev. B 41 (1990) 5942-5951
  • [15]. Karabulut I., Atav U. , Safak H., Tomak M., Second harmonic generation in an asymmetric rectangular quantum well under hydrostatic pressure, Physica B 393 (2007) 133-138
  • [16]. Martinez-Orozco J. C., Mora-Ramos M. E., Duque C. A., Nonlinear optical rectification and second and third harmonic generation in GaAs δ-FETsystems under hydrostatic pressure, J. Lumin., 132 (2012) 449-456
  • [17]. Martinez-Orozco J. C., Rojas-Briseno J. G., Rodriguez-Magdaleno K. A., Rodriguez-Vargas I., Mora-Ramos M. E., Restrepo R. L., Ungan F., Kasapoglu E., Duque C. A., Effect of the magnetic field on the nonlinear optical rectification and second and third harmonic generation in double δ-doped GaAs quantum wells, Physica B 525 (2017) 30-35
  • [18]. Ozturk E., Sokmen I., Intersubband transitions for single, double and triple Si δ-doped GaAs layers, Phys. D: Appl. Phys. 36 (2003) 2457-2464
  • [19]. Tsang L., Ahn D., Chuang S.L., Electric field control of optical second harmonic generation in a quantum well, Appl. Phys. Lett. 52 (1988) 697-699

Intersub-band Second Order Nonlinear Transitions in Asymmetric Double Delta-Doped GaAs Structures

Yıl 2018, Cilt: 39 Sayı: 3, 720 - 727, 30.09.2018

Emine Öztürk

https://doi.org/10.17776/csj.448219

Öz

In this study, second order harmonic generation (SHG) coefficient in asymmetric double delta doped wells (ADQW) were
investigated for a uniform doping distribution model. The electronic properties
of GaAs structure with ADQW, such as the potential profile, sub-band energy
levels, wave functions and charge densities are calculated
by self-consistent the Schrödinger and Poisson equations. According to the parameters used in this study, I have seen that for the doping concentration, SHG peak size in ADQW structure with the
intersubband relaxation time  gives the same peak magnitude value with   for the
doping concentration 5. Also, for the thickness of the donor
distribution  the peak
size value of SHG with  has
approximately the same behavior with   for the
donor distribution thickness . The dependence on
the structural parameters of the nonlinear transitions in the second order
between the sub-bands is more important for the potential variations of the
photodetectors and optical modulators. These
structures will have an important place in the future research of quantum
photo-electronic devices.

Anahtar Kelimeler

Delta-doping self-consistent second order harmonic generation (SHG) coefficient nonlinear transitions

Kaynakça

  • [1]. Degani M.H., Electron energy levels in a delta-doped layer in GaAs, Phys. Rev. B 44 (1991) 5580-5584
  • [2]. Ozturk E., Optical intersubband transitions in double Si _-doped GaAs under an applied magnetic field, Superlatt. Microstruct. 46 (2009) 752-759
  • [3]. Gaggero-Sager L.M., Naumis G.G., Munoz-Hernandez M.A., Montiel-Palma V., Self- consistent calculation of transport properties in Si δ-doped GaAs quantum wells as a function of the temperature, Physica B 405 (2010) 4267-4270
  • [4]. Schubert E.F., Fischer A., Ploog K., The delta-doped field-effect transistor, IEEE Trans. Electron Devices 33 (1986) 625-632
  • [5]. Zheng X., Carns T.K., Wang K.L., Wu B., Electron mobility enhancement from coupled wells in delta‐doped GaAs, Appl. Phys. Lett. 62 (1993) 504-506
  • [6]. Hai G.Q., Studart N., Peeters F.M., Electron mobility in two coupled delta layers, Phys. Rev. B 52 (1995) 11273-11276
  • [7]. Chen L.Y., Cheng S.Y., Chen T.P., Chu K.Y., Tsai T.H., Liu Y.C., Liao X.D., Liu W.C., On an InGaP/InGaAs double channel pseudomorphic high electron mobility transistor with graded triple δ-doped sheets, IEEE Trans. Electron Devices, 55 (2008) 3310-3318
  • [8]. Karabulut I., Baskoutas S., Linear and nonlinear optical absorption coefficients and refractive index changes in spherical quantum dots: Effects of impurities, electric field, size, and optical intensity, J. Appl. Phys. 103 (2008) 073512-073516
  • [9]. Ozturk E., Ozdemir Y., Linear and nonlinear intersubband optical absorption coefficient and refractive index change in n-type d-doped GaAs structure, Opt. Commun. 294 (2013) 361-367
  • [10]. Restrepo R.L., Morales A.L., Martinez-Orozco J.C., Baghramyan H.M., Barseghyan M.G., Mora-Ramos M.E., Duque C.A., Impurity-related nonlinear optical properties in delta-doped quantum rings: Electric field effects, Physica B 453 (2014) 140-145
  • [11]. Oubram O., Rodriguez-Vargas I., Martinez-Orozco J. C., Refractive index changes in n-type delta-doped GaAs under hydrostatic pressure, Revista Mexicana de Fisica 60 (2014) 161-167.
  • [12]. Kasapoglu E., Yesilgul U., Ungan F., Sokmen I., Sari H., The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells, Optical Materials 64 (2017) 82-87
  • [13]. Ozturk E., Nonlinear transitions in single, double, and triple δ-doped GaAs structures, Romanian Journal of Physics 62 (2017) 603-612
  • [14]. Tsang L., Chuang S.L., Lee S.M., Second-order nonlinear optical susceptibility of a quantum well with an applied electric field, Phys. Rev. B 41 (1990) 5942-5951
  • [15]. Karabulut I., Atav U. , Safak H., Tomak M., Second harmonic generation in an asymmetric rectangular quantum well under hydrostatic pressure, Physica B 393 (2007) 133-138
  • [16]. Martinez-Orozco J. C., Mora-Ramos M. E., Duque C. A., Nonlinear optical rectification and second and third harmonic generation in GaAs δ-FETsystems under hydrostatic pressure, J. Lumin., 132 (2012) 449-456
  • [17]. Martinez-Orozco J. C., Rojas-Briseno J. G., Rodriguez-Magdaleno K. A., Rodriguez-Vargas I., Mora-Ramos M. E., Restrepo R. L., Ungan F., Kasapoglu E., Duque C. A., Effect of the magnetic field on the nonlinear optical rectification and second and third harmonic generation in double δ-doped GaAs quantum wells, Physica B 525 (2017) 30-35
  • [18]. Ozturk E., Sokmen I., Intersubband transitions for single, double and triple Si δ-doped GaAs layers, Phys. D: Appl. Phys. 36 (2003) 2457-2464
  • [19]. Tsang L., Ahn D., Chuang S.L., Electric field control of optical second harmonic generation in a quantum well, Appl. Phys. Lett. 52 (1988) 697-699
Toplam 19 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Bölüm Natural Sciences
Yazarlar

Emine Öztürk

Yayımlanma Tarihi 30 Eylül 2018
Gönderilme Tarihi 26 Temmuz 2018
Kabul Tarihi 11 Ağustos 2018
Yayımlandığı Sayı Yıl 2018Cilt: 39 Sayı: 3

Kaynak Göster

APA Öztürk, E. (2018). Intersub-band Second Order Nonlinear Transitions in Asymmetric Double Delta-Doped GaAs Structures. Cumhuriyet Science Journal, 39(3), 720-727. https://doi.org/10.17776/csj.448219